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Renesas 2SJ387STL-E
- Part No.:
- 2SJ387STL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ387STL-E.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:14,497
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Product details
Overview
2SJ387STL-E from Renesas Electronics is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features –20 V drain-to-source voltage rating, 0.05 Ω typical RDS(on) at VGS = –4 V, and –10 A continuous drain current, enabling efficient low-side switching in compact power stages.
For engineers reviewing the 2SJ387STL-E datasheet, 2SJ387STL-E pinout, 2SJ387STL-E application, or 2SJ387STL-E equivalent, key selection criteria include gate drive compatibility with 2.5–3 V logic, body diode reverse recovery time (240 ns), and thermal derating behavior up to 150 °C channel temperature - critical for synchronous buck converter high-side companion pairing and industrial SMPS design.
Technical Context
This device operates as a low-voltage, high-current P-channel enhancement-mode MOSFET with a gate threshold voltage range of –0.5 V to –1.5 V and a maximum gate-source voltage of ±10 V. Its low RDS(on) and fast switching times (td(on) = 20 ns, tf = 425 ns) support high-frequency operation up to several hundred kHz in hard-switched topologies.
The integrated body diode exhibits VDF = –1.0 V at –10 A and trr = 240 ns under specified di/dt conditions, making it suitable for freewheeling paths where controlled reverse recovery is required. Thermal resistance θch–c is 6.25 °C/W, confirming DPAK package suitability for surface-mount PCBs with copper-backed heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –20 V: Maximum blocking voltage in off-state; defines use in ≤16 V input DC-DC stages with margin. |
| RDS(on) (typ) | 0.05 Ω at VGS = –4 V: Enables <1 W conduction loss at –5 A, supporting thermally constrained layouts. |
| ID (cont) | –10 A: Continuous drain current rating at Tc = 25 °C; requires thermal management above ambient. |
| tr/tf | 325 ns / 425 ns: Rise/fall times at ID = –5 A; supports ≤500 kHz switching without excessive EMI. |
| Ciss | 1170 pF: Input capacitance at VDS = –10 V; determines gate drive strength requirement for fast turn-on. |
| VGS(th) | –0.5 to –1.5 V: Gate threshold range ensures reliable turn-on with 2.5–3.3 V logic-level drivers. |
| trr | 240 ns: Body diode reverse recovery time; enables use in non-synchronous flyback or buck freewheeling. |
Pinout & Package
2SJ387STL-E uses the DPAK (S) package (RENESAS code PRSS0004ZD-C, JEITA SC-63), a surface-mount power package with exposed drain pad for thermal conduction. Dimensions: 6.5 × 5.4 × 2.3 mm (L × W × H), mass 0.28 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives negative gate voltage relative to source to turn on; threshold –0.5 to –1.5 V enables direct microcontroller drive. |
| 2 (Drain) | High-side current path | Connected to input rail in high-side switch configuration; electrically tied to exposed backside metal pad for heat dissipation. |
| 3 (Source) | Reference node | Serves as return path for load current; used as gate drive reference in high-side applications. |
| 4 (Drain) | Redundant drain connection | Parallel drain terminal to reduce package inductance and improve thermal spreading; must be soldered to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.05 Ω typ at –4 V gate drive reduces conduction losses in battery-powered and energy-sensitive systems. |
| 2.5 V logic-compatible gate | Turns on fully with 2.5–3.3 V supply rails, eliminating need for level-shifting in portable DC-DC controllers. |
| Fast switching speed | 20 ns turn-on delay and 425 ns fall time enable high-frequency operation while maintaining efficiency. |
| Integrated body diode | Rated for –10 A reverse current with 240 ns recovery, supporting freewheeling without external diode in many topologies. |
| DPAK (S) package | SC-63 footprint provides 0.28 g mass and 6.25 °C/W thermal resistance - optimized for automated SMT assembly and thermal reliability. |
Applications
| DC-DC Buck Converter | Load Switch for 12 V Systems |
|---|---|
Use Scenario: Step-down conversion from 12 V to 5 V/3.3 V in industrial control modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier or high-side main switch in non-isolated buck topology. Use Value: 0.05 Ω RDS(on) limits I²R loss to <0.25 W at 5 A, improving full-load efficiency by ≥2% versus higher-RDS(on) alternatives. |
Use Scenario: Controlled power-up sequencing for FPGA or microprocessor core rails in telecom equipment. IC Role / Device Role / Timing Role: High-side load switch enabling soft-start and inrush current limiting via gate slew control. Use Value: –1.5 V VGS(th) max ensures robust turn-on with 3.3 V GPIO, while 40 A pulse rating handles cold-start surges. |
| Motor Driver Half-Bridge | Hot-Swap Controller |
Use Scenario: 24 V brushed DC motor drive in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, paired with N-channel low-side FET. Use Value: 240 ns body diode trr minimizes shoot-through risk during dead-time transitions and reduces snubbing requirements. |
Use Scenario: Board-level hot-plug insertion protection in modular server backplanes. IC Role / Device Role / Timing Role: Main pass element controlling ramp rate and fault isolation during live insertion. Use Value: –20 V VDSS and –40 A peak rating withstand 12 V rail transients and capacitive inrush without avalanche stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | RDS(on) = 0.3 Ω @ –10 V; VDSS = –100 V; TO-220 package | Higher voltage rating but 6× higher on-resistance; unsuitable for 3.3 V gate drive | Select only when >60 V blocking is required and board space allows through-hole mounting. |
| Si2305DS-T1-GE3 | RDS(on) = 0.045 Ω @ –4.5 V; SOT-23 package; ID = –4 A | Lower current rating and smaller thermal mass; limited to <2 W continuous dissipation | Prefer for space-constrained, low-power applications where 10 A capability is unnecessary. |
Compared with IRF9530NPBF and Si2305DS-T1-GE3, the 2SJ387STL-E uniquely balances –10 A current handling, 0.05 Ω RDS(on) at 3 V drive, and DPAK thermal performance - making it optimal for mid-power industrial DC-DC and load switching where gate drive voltage and thermal density are co-constrained.
Availability
2SJ387STL-E is available at Aetrix Electronics and suitable for DC-DC converters, motor driver half-bridges, and hot-swap controllers requiring stable component supply across industrial production cycles.
Supply support for 2SJ387STL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SJ387STL-E belongs to Renesas' legacy power MOSFET portfolio, engineered specifically for high-efficiency, medium-current switching in cost-sensitive industrial power supplies and motor control systems.
FAQ
What is the gate threshold voltage range for the 2SJ387STL-E?
The 2SJ387STL-E has a gate-to-source cutoff voltage VGS(off) ranging from –0.5 V to –1.5 V at ID = –1 mA and VDS = –10 V. This low threshold enables full enhancement with standard 2.5–3.3 V logic outputs, eliminating external level shifters in many applications. The 2SJ387STL-E's tight VGS(th) distribution ensures consistent turn-on behavior across temperature and unit variance.
Can the 2SJ387STL-E be used in synchronous rectification?
No - the 2SJ387STL-E is a P-channel MOSFET intended for high-side switching or low-side configurations where gate drive simplicity is prioritized. Its body diode recovery time (240 ns) and lack of dedicated synchronous control timing specs make it unsuitable as a synchronous rectifier in high-frequency LLC or resonant topologies. For synchronous rectification, N-channel devices with precise timing control and lower Qg are preferred. The 2SJ387STL-E remains appropriate for standard buck freewheeling or load switching.
What is the thermal resistance junction-to-case for the 2SJ387STL-E?
The 2SJ387STL-E has a channel-to-case thermal resistance θch–c of 6.25 °C/W, measured under steady-state conditions at Tc = 25 °C. This value assumes full soldering of the exposed drain pad to a minimum 1-in² copper area on the PCB. Derating curves on page 5 of the datasheet confirm usable power dissipation up to 12 W at Tc = 100 °C. The 2SJ387STL-E's DPAK (S) package delivers this performance in a compact 6.5 × 5.4 mm footprint.
Is the 2SJ387STL-E RoHS compliant?
Yes - the 2SJ387STL-E complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. RoHS status is maintained across all manufacturing lots, and material declarations are available upon request for the 2SJ387STL-E.
Does the 2SJ387STL-E have avalanche rating capability?
No - the 2SJ387STL-E datasheet does not specify unclamped inductive switching (UIS) or avalanche energy ratings. Its absolute maximum ratings define safe operating area (SOA) limits only under clamped conditions. Designers must ensure circuit protection (e.g., snubbers, clamp diodes, or current limiting) prevents exposure to unclamped inductive transients. The 2SJ387STL-E is not rated for repetitive avalanche operation, and reliance on inherent avalanche tolerance is not supported by Renesas test data.
2SJ387STL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ387STL-E FAQ
1.How can I place an order for 2SJ387STL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ387STL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ387STL-E reliable?
The price and inventory of 2SJ387STL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ387STL-E is usually 5 days.
3.What payment methods are accepted for 2SJ387STL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ387STL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ387STL-E?
2SJ387STL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ387STL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ387STL-E?
For technical support, including 2SJ387STL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ387STL-E requirements.
6.How does Aetrix verify that 2SJ387STL-E is sourced from the original manufacturer or authorized distributors?
All 2SJ387STL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ387STL-E meets industry standards.
7.What is the process for return or replacement of 2SJ387STL-E?
All 2SJ387STL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ387STL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ387STL-E part is unused and in its original packaging.
Return procedure for 2SJ387STL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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