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Renesas 2SJ409-90STR
- Part No.:
- 2SJ409-90STR
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ409-90STR.pdf
- Description:
- MOSFET P-CH 100V 20A
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
2SJ409-90STR from Renesas Electronics (formerly Hitachi) is a silicon P-channel MOSFET designed for high-speed power switching in DC–DC converters and switching regulators. It features –100 V VDSS, –20 A continuous drain current, 0.12 Ω typical RDS(on) at VGS = –10 V, 15 ns turn-on delay, and LDPAK surface-mount package with dual-drain terminals.
For engineers reviewing the 2SJ409-90STR datasheet, 2SJ409-90STR pinout, 2SJ409-90STR application, or 2SJ409-90STR equivalent, key selection criteria include gate threshold voltage (–1.0 to –2.0 V), low drive current requirement, 4 V gate compatibility, body diode reverse recovery time (280 ns), and thermal performance under pulsed load conditions.
Technical Context
This P-channel MOSFET operates as a high-side switch in non-synchronous buck topologies and point-of-load regulators. Its –100 V blocking capability, low RDS(on), and fast switching (tr = 115 ns, tf = 170 ns) support efficient operation at 100–500 kHz switching frequencies.
The LDPAK package integrates two drain terminals for enhanced current handling and thermal dissipation, while the –1.0 to –2.0 V VGS(off) enables direct drive from standard 5 V logic with minimal external components. The integrated body diode has VDF = –1.05 V at –20 A and trr = 280 ns under defined di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –100 V - supports input rails up to 80 V in isolated or non-isolated DC–DC stages |
| ID (continuous) | –20 A - delivers ≥160 W output in 8–12 V output converters with proper heatsinking |
| RDS(on) (typ) | 0.12 Ω @ VGS = –10 V - yields <1.2 W conduction loss at –10 A |
| td(on)/td(off) | 15 ns / 320 ns - enables stable operation up to 500 kHz with controlled shoot-through risk |
| VGS(off) | –1.0 to –2.0 V - ensures reliable turn-off with 5 V gate drivers without level-shifting |
| Ciss | 1860 pF - determines gate drive energy requirement (~93 nC total charge at –10 V) |
| trr | 280 ns - defines minimum dead-time needed to prevent cross-conduction in half-bridge configurations |
Pinout & Package
2SJ409-90STR uses the LDPAK (also known as HSOP-8 or LFPAK-style) surface-mount package with exposed drain pads on both sides of the leadframe for improved thermal and electrical performance. Total weight: 1.4 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts –4 V to –20 V drive; low input capacitance enables fast switching |
| 2 (D) | Drain (Terminal 1) | Main high-side power path; electrically connected to exposed metal pad for thermal conduction |
| 3 (S) | Source | Reference node for gate drive; tied to output rail in high-side switch configuration |
| 4 (D) | Drain (Terminal 2) | Second drain connection; parallel path reduces effective RDS(on) and improves current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.12 Ω typ at –10 V gate drive - reduces conduction losses in high-current DC–DC outputs |
| 4 V gate drive compatibility | Guaranteed turn-on at VGS = –4 V - eliminates need for dedicated gate driver ICs in 5 V systems |
| Dual-drain LDPAK package | Two separate drain terminals + exposed thermal pad - lowers junction-to-board thermal resistance by ~30% vs SO-8 |
| Fast body diode | trr = 280 ns, VDF = –1.05 V - minimizes reverse recovery loss during freewheeling in non-synchronous topologies |
| High dV/dt immunity | VGSS = ±20 V rating - withstands gate transients in noisy power supply environments |
Applications
| Server VRM Power Stage | Industrial DC–DC Converter |
|---|---|
Use Scenario: High-efficiency 12 V input to 1.2 V/100 A output voltage regulator module in rack-mounted servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–400 kHz with precise gate timing control. Use Value: Low RDS(on) and fast switching minimize power loss and thermal stress under sustained high-current loads. | Use Scenario: 48 V to 24 V step-down converter in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: Primary high-side switching element in non-synchronous buck topology with discrete freewheeling diode. Use Value: –100 V rating provides 2× safety margin over 48 V nominal input; robust VGSS rating prevents gate oxide failure during ESD events. |
| Telecom Base Station PSU | Automotive Body Control Module |
Use Scenario: Intermediate bus converter (–48 V input) powering RF amplifier bias rails in macrocell base stations. IC Role / Device Role / Timing Role: High-voltage P-channel switch enabling negative-rail power delivery with minimal external components. Use Value: Gate threshold range (–1.0 to –2.0 V) allows direct microcontroller GPIO drive without level shifters or pull-up networks. | Use Scenario: Load switch for 12 V battery-fed lighting and actuator circuits in automotive BCMs. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch with integrated body diode for inductive load flyback suppression. Use Value: Fast trr (280 ns) and low VDF reduce voltage spikes and EMI during relay or solenoid de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP10P10P | RDS(on) = 0.22 Ω (higher), TO-220 package, no dual drain | Larger footprint, higher thermal resistance, requires heatsink | Preferred where through-hole mounting and manual assembly dominate |
| IRF9540NPBF | RDS(on) = 0.20 Ω, TO-220, VGS(off) = –2 to –4 V (less sensitive) | Higher gate drive voltage required; slower tr/tf (120/150 ns) | Suitable when legacy designs require drop-in replacement with relaxed switching speed |
Compared with IXTP10P10P and IRF9540NPBF, the 2SJ409-90STR offers lower conduction loss, superior thermal performance via LDPAK, and tighter gate threshold control-making it optimal for space-constrained, high-frequency DC–DC applications where efficiency and layout density are critical.
Availability
2SJ409-90STR is available at Aetrix Electronics and suitable for server VRMs, industrial DC–DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for 2SJ409-90STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The 2SJ409-90STR belongs to Renesas' legacy high-voltage P-channel MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in compact, thermally demanding environments.
FAQ
What is the maximum continuous drain current rating for the 2SJ409-90STR?
The 2SJ409-90STR is rated for –20 A continuous drain current at Tc = 25°C. Derating is required above this case temperature; at 100°C case temperature, the usable current drops to approximately –12 A per the channel dissipation limit of 75 W and thermal resistance characteristics of the LDPAK package. Always verify actual board-level thermal performance before final design.
Does the 2SJ409-90STR support 4 V gate drive in practice?
Yes-the 2SJ409-90STR is explicitly characterized for operation with VGS = –4 V, delivering RDS(on) ≤ 0.22 Ω at –10 A. This enables direct interface with standard 5 V logic outputs without level-shifting circuitry. However, full enhancement (lowest RDS(on)) requires –10 V, so system designers must weigh trade-offs between gate drive simplicity and conduction loss.
How does the dual-drain configuration of the 2SJ409-90STR improve performance?
The dual-drain structure in the 2SJ409-90STR's LDPAK package provides two parallel current paths and an extended thermal pad area. This reduces effective source inductance, lowers overall RDS(on) under real PCB conditions, and improves heat transfer to the board-achieving ~30% lower junction-to-board thermal resistance versus conventional SO-8 packages. It also enhances current sharing in high-pulse applications.
Is the body diode in the 2SJ409-90STR suitable for freewheeling in non-synchronous buck converters?
Yes-the integrated body diode of the 2SJ409-90STR is characterized with VDF = –1.05 V at –20 A and trr = 280 ns under specified di/dt conditions. These parameters make it viable for freewheeling in medium-frequency (<500 kHz) non-synchronous buck converters, though external Schottky diodes may be preferred for ultra-low-loss or high-di/dt applications.
What is the gate-to-source leakage current specification for the 2SJ409-90STR?
The 2SJ409-90STR specifies |IGSS| ≤ ±10 µA at VGS = ±16 V and VDS = 0. This low leakage supports stable gate biasing in high-impedance drive circuits and ensures minimal static power loss in always-on control configurations. It reflects robust gate oxide integrity consistent with industrial-grade reliability requirements.
2SJ409-90STR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ409-90STR FAQ
1.How can I place an order for 2SJ409-90STR through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ409-90STR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ409-90STR reliable?
The price and inventory of 2SJ409-90STR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ409-90STR is usually 5 days.
3.What payment methods are accepted for 2SJ409-90STR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ409-90STR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ409-90STR?
2SJ409-90STR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ409-90STR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ409-90STR?
For technical support, including 2SJ409-90STR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ409-90STR requirements.
6.How does Aetrix verify that 2SJ409-90STR is sourced from the original manufacturer or authorized distributors?
All 2SJ409-90STR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ409-90STR meets industry standards.
7.What is the process for return or replacement of 2SJ409-90STR?
All 2SJ409-90STR units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ409-90STR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ409-90STR part is unused and in its original packaging.
Return procedure for 2SJ409-90STR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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