Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ462-T1-AZ

Name: 2SJ462-T1-AZ
Brand: Renesas
SKU: 2SJ462-T1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SJ462-T1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ462-T1-AZ.pdf

Description:: P-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:42,970

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SJ462-T1-AZ from Renesas Electronics is a P-channel MOSFET designed for high-speed switching in low-voltage power management circuits. It features R_DS(on) = 0.29 Ω max at V_GS = –2.5 V, ID = –0.5 A; V_DSS = –12 V; I_D(DC) = ±2.5 A; and operates with gate drive as low as 2.5 V - enabling direct interface with 3 V logic ICs in battery-powered load switches.

For engineers reviewing the 2SJ462-T1-AZ datasheet, 2SJ462-T1-AZ pinout, 2SJ462-T1-AZ application, or 2SJ462-T1-AZ equivalent, key selection criteria include verified low-voltage gate threshold (V_GS(off) = –0.7 to –1.3 V), compact surface-mount package (SOT-23), integrated body diode with t_rr = 150 ns, and thermal derating validated up to T_A = 125 °C.

Technical Context

This device implements a planar vertical DMOS structure optimized for fast switching and low conduction loss in unidirectional high-side or low-side configurations. Its gate charge profile (Q_G = 12 nC, Q_GD = 7 nC) supports sub-200 ns turn-off delay (t_d(off) = 140 ns) under 10 Ω gate resistance, while the low C_iss (940 pF) and C_oss (835 pF) enable stable operation in DC-DC converter synchronous rectification and LED driver PWM control.

The integrated source-drain diode exhibits V_F(S–D) = –0.86 V at I_F = –2.5 A and reverse recovery charge Q_rr = 160 nC, confirming suitability for freewheeling paths where controlled reverse recovery is required - not for high-frequency resonant topologies demanding ultra-low Q_rr.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–12 V: Maximum blocking voltage for use in ≤12 V rail switching (e.g., USB PD auxiliary power path).
R_DS(on) @ V_GS = –2.5 V	0.29 Ω max: Enables <150 mW conduction loss at 0.5 A DC load current without heatsinking.
V_GS(off)	–0.7 to –1.3 V: Confirmed turn-on threshold compatible with 2.5–3.3 V microcontroller GPIOs.
t_d(off) + t_f	335 ns max: Supports PWM frequencies up to ~1 MHz in discrete buck converter topologies.
Q_G	12 nC: Gate drive energy requirement compatible with standard logic-level drivers (e.g., TC4420).
T_ch max	150 °C: Channel temperature limit validated for continuous operation on 7.5 cm² ceramic board.
C_iss	940 pF: Input capacitance defining Miller plateau duration during gate drive transitions.

Pinout & Package

2SJ462-T1-AZ is housed in a surface-mount SOT-23 package (JEDEC TO-236AB), measuring 2.9 × 1.3 × 1.0 mm, with gull-wing leads and marked "UA3". Thermal performance assumes mounting on 7.5 cm² ceramic substrate per datasheet test condition.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to higher potential rail in high-side switch; internal diode anode for freewheeling.
2 (Drain)	Main current output terminal	Connected to load; withstands –12 V reverse bias; carries full switched current (≤2.5 A DC).
3 (Gate)	Control electrode for channel modulation	Driven by negative voltage relative to source; requires ≤±8 V absolute rating; low input capacitance enables fast edge rates.

Key Features

Feature	Design Value
2.5 V gate drive compatibility	Enables direct interface with 3 V logic families without level-shifting circuitry.
Low R_DS(on) at low V_GS	0.29 Ω max at –2.5 V ensures efficient operation in battery-powered systems with limited headroom.
Compact SOT-23 footprint	Reduces PCB area vs. larger packages (e.g., SOP-8) while maintaining 2.0 W dissipation capability on ceramic board.
Fast switching with low Q_GD	7 nC gate-to-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations.
Integrated body diode	Specified t_rr = 150 ns and Q_rr = 160 nC support controlled freewheeling in non-synchronous converters.

Applications

Battery Load Switch	USB Power Path Control
Use Scenario: Enabling/disabling power to peripheral modules in portable medical monitors powered by single-cell Li-ion (2.8–4.2 V). IC Role / Device Role / Timing Role: High-side P-channel switch controlling VBUS delivery; activated by MCU GPIO with 3 V logic swing. Use Value: Low 0.29 Ω R_DS(on) limits dropout to <150 mV at 0.5 A, preserving system efficiency without external gate driver.	Use Scenario: Isolating downstream USB ports during hot-plug events or fault conditions in industrial docking stations. IC Role / Device Role / Timing Role: Low-side switch in OR-ing configuration with reverse-current blocking; driven by 3.3 V supervisor IC. Use Value: Verified 150 ns reverse recovery time prevents latch-up during dynamic VBUS disconnect transients.
LED Backlight Dimming	DC-DC Converter Synchronous Rectifier
Use Scenario: PWM-controlled current sink for white LED strings in automotive infotainment displays (12 V supply, 350 mA per string). IC Role / Device Role / Timing Role: Low-side constant-current switch; gate driven by 3 V PWM generator with 10 Ω series resistor. Use Value: 140 ns t_d(off) supports >500 kHz dimming frequency without visible flicker or audible noise.	Use Scenario: Secondary-side rectification in isolated 5 V/3 A flyback converter for PoE-powered access points. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; gate driven by transformer-coupled signal referenced to secondary ground. Use Value: 0.19 Ω R_DS(on) at –4 V reduces conduction loss by 40% vs. 40 V/3 A Schottky (0.35 Ω typical), improving efficiency by 1.2% at full load.

Battery Load Switch

USB Power Path Control

Use Scenario: Enabling/disabling power to peripheral modules in portable medical monitors powered by single-cell Li-ion (2.8–4.2 V).

IC Role / Device Role / Timing Role: High-side P-channel switch controlling VBUS delivery; activated by MCU GPIO with 3 V logic swing.

Use Value: Low 0.29 Ω R_DS(on) limits dropout to <150 mV at 0.5 A, preserving system efficiency without external gate driver.

Use Scenario: Isolating downstream USB ports during hot-plug events or fault conditions in industrial docking stations.

IC Role / Device Role / Timing Role: Low-side switch in OR-ing configuration with reverse-current blocking; driven by 3.3 V supervisor IC.

Use Value: Verified 150 ns reverse recovery time prevents latch-up during dynamic VBUS disconnect transients.

LED Backlight Dimming

DC-DC Converter Synchronous Rectifier

Use Scenario: PWM-controlled current sink for white LED strings in automotive infotainment displays (12 V supply, 350 mA per string).

IC Role / Device Role / Timing Role: Low-side constant-current switch; gate driven by 3 V PWM generator with 10 Ω series resistor.

Use Value: 140 ns t_d(off) supports >500 kHz dimming frequency without visible flicker or audible noise.

Use Scenario: Secondary-side rectification in isolated 5 V/3 A flyback converter for PoE-powered access points.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; gate driven by transformer-coupled signal referenced to secondary ground.

Use Value: 0.19 Ω R_DS(on) at –4 V reduces conduction loss by 40% vs. 40 V/3 A Schottky (0.35 Ω typical), improving efficiency by 1.2% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DS-T1-E3	R_DS(on) = 0.115 Ω @ –4.5 V (lower), but V_DSS = –20 V (higher); Q_G = 5.5 nC (lower); SOT-23 package identical.	Requires ≥4.5 V gate drive for optimal R_DS(on); less suitable for 2.5–3.3 V logic-only drive.	Select when gate drive ≥4.5 V is available and lower conduction loss at higher V_GS is prioritized over 2.5 V compatibility.
DMG1012T-7	R_DS(on) = 0.22 Ω @ –2.5 V (lower), V_DSS = –12 V (same); Q_G = 9.5 nC (lower); same SOT-23 footprint and marking.	Specified for –2.5 V drive with tighter R_DS(on) distribution; no published t_rr/Q_rr data for diode.	Prefer when precise 2.5 V turn-on behavior and lowest possible on-resistance are critical, and freewheeling diode specs are secondary.

Compared with Si2301DS-T1-E3 and DMG1012T-7, the 2SJ462-T1-AZ uniquely guarantees R_DS(on) ≤ 0.29 Ω at –2.5 V with fully characterized diode recovery (t_rr, Q_rr) - making it the only option among the three validated for 2.5 V logic-driven freewheeling in space-constrained DC-DC designs.

Availability

2SJ462-T1-AZ is available at Aetrix Electronics and suitable for battery load switching, USB power path control, LED backlight dimming, and DC-DC converter synchronous rectification requiring stable component supply across industrial and consumer electronics programs.

Supply support for 2SJ462-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SJ462-T1-AZ belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for low-voltage, high-efficiency switching in portable and embedded power management systems where gate drive simplicity and thermal reliability are critical.

FAQ

What is the maximum continuous drain current rating for the 2SJ462-T1-AZ?

The 2SJ462-T1-AZ has a maximum continuous drain current (I_D(DC)) of ±2.5 A at T_A = +25 °C, derated linearly to zero at T_A = +125 °C per the datasheet's derating curve. This rating assumes mounting on a 7.5 cm² ceramic board; PCB layout and copper area directly impact achievable current in real applications. The 2SJ462-T1-AZ must not exceed this limit without thermal analysis confirming safe channel temperature (T_ch ≤ 150 °C).

Does the 2SJ462-T1-AZ have a built-in ESD protection diode on the gate?

Yes, the 2SJ462-T1-AZ includes an internal gate protection diode, as shown in the Equivalent Circuit diagram on page 2 of the official Renesas datasheet. This diode clamps gate-to-source voltage to prevent damage from electrostatic discharge, supporting a maximum |V_GS| rating of ±8.0 V. The 2SJ462-T1-AZ remains susceptible to damage if exposed to sustained overvoltage beyond this limit or to fast transient events exceeding its specified ESD immunity.

Can the 2SJ462-T1-AZ be used in a synchronous rectifier configuration?

Yes, the 2SJ462-T1-AZ is suitable for synchronous rectification in low-voltage DC-DC converters due to its low R_DS(on) (0.19 Ω max at –4.0 V), fast switching (t_d(off) = 140 ns), and fully specified source-drain diode (V_F(S–D) = –0.86 V, t_rr = 150 ns). When used as a synchronous rectifier, the 2SJ462-T1-AZ must be driven with properly timed gate signals referenced to the source node to avoid shoot-through; its Q_GD = 7 nC helps minimize Miller-induced delays.

What is the gate threshold voltage range for the 2SJ462-T1-AZ?

The gate threshold voltage (V_GS(off)) for the 2SJ462-T1-AZ is specified as –0.7 V (min), –1.0 V (typ), and –1.3 V (max) at V_DS = –3.0 V and I_D = –1.0 mA. This confirmed range ensures reliable turn-on with 2.5–3.3 V logic-level gate drive, distinguishing it from higher-threshold P-channel devices requiring ≥4.5 V. The 2SJ462-T1-AZ achieves full enhancement well within standard microcontroller GPIO voltage ranges.

Is the 2SJ462-T1-AZ RoHS compliant?

Yes, the 2SJ462-T1-AZ is RoHS compliant, as confirmed by Renesas Electronics' environmental compliance documentation and product change notices. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above EU RoHS Directive thresholds. The 2SJ462-T1-AZ meets JEDEC J-STD-609A Class 1 marking requirements for lead-free finish, and its packaging complies with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 1.

2SJ462-T1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ462-T1-AZ FAQ

1.How can I place an order for 2SJ462-T1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ462-T1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ462-T1-AZ reliable?

The price and inventory of 2SJ462-T1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ462-T1-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ462-T1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ462-T1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ462-T1-AZ?

2SJ462-T1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ462-T1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ462-T1-AZ?

For technical support, including 2SJ462-T1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ462-T1-AZ requirements.

6.How does Aetrix verify that 2SJ462-T1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ462-T1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ462-T1-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ462-T1-AZ?

All 2SJ462-T1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ462-T1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ462-T1-AZ part is unused and in its original packaging.

Return procedure for 2SJ462-T1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…