Renesas 2SJ471-E

Overview

2SJ471-E from Renesas Electronics is a silicon P-channel DV-L MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and load-switching circuits. It delivers R_DS(on) = 25 mΩ typ. at V_GS = –10 V, supports –30 A continuous drain current, and operates with 4 V gate drive capability. Its TO-220CFM package enables robust thermal management in industrial power stages.

For engineers reviewing the 2SJ471-E datasheet, 2SJ471-E pinout, 2SJ471-E application, or 2SJ471-E equivalent, key selection criteria include verified –30 V V_DSS, low R_DS(on) at 4 V gate drive, body-diode reverse recovery time (t_rr = 70 ns), and safe operating area limits under pulse and DC conditions.

Technical Context

This device uses a vertical double-diffused MOS structure optimized for low conduction loss and fast switching in high-current, low-voltage P-channel configurations. Its gate threshold voltage (V_GS(off) = –1.0 to –2.0 V) ensures reliable turn-off with standard logic-level gate drivers.

Electrical behavior is characterized by strong transconductance (|y_fs| = 12–20 S), low output capacitance (C_oss = 950 pF), and defined dynamic timing (t_d(on) = 20 ns, t_f = 130 ns), enabling efficient operation in synchronous rectification and half-bridge topologies.

Key Specifications

Pinout & Package

2SJ471-E is housed in a TO-220CFM (RENESAS code PRSS0003AE-A) package with isolated tab, rated for 150°C channel temperature and 1.9 g mass. The case serves as the Drain terminal, enabling direct heatsink mounting without insulating hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9540NPbF and STP36PF06, the 2SJ471-E uniquely combines –30 V rating, 4 V gate drive assurance, 25 mΩ conduction resistance, and TO-220CFM isolated-tab packaging-making it optimal for space-constrained, thermally demanding 24 V industrial power switches requiring minimal external components.

Availability

2SJ471-E is available at Aetrix Electronics and suitable for industrial motor drivers, DC-DC synchronous rectifiers, hot-swap load switches, and backup power OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for 2SJ471-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SJ471-E belongs to Renesas' legacy DV-L (Double Vertical Low-loss) MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion where low gate drive voltage and thermal reliability are critical.

FAQ

What is the maximum continuous drain current rating for the 2SJ471-E?

The 2SJ471-E is rated for –30 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25°C per the thermal impedance curve in the datasheet. Actual usable current depends on PCB layout, ambient temperature, and airflow-designers must verify junction temperature stays ≤150°C in final application. The 2SJ471-E supports this rating with its 30 W channel dissipation and low R_DS(on).

Does the 2SJ471-E support 3.3 V or 5 V logic-level gate drive?

Yes-the 2SJ471-E is explicitly characterized for 4 V gate drive, with R_DS(on) = 40 mΩ typ. at V_GS = –4 V and I_D = –15 A. This confirms compatibility with 3.3 V and 5 V controller outputs when used with appropriate negative gate bias. Unlike standard logic-level MOSFETs, it does not require external level shifters. The 2SJ471-E achieves this via optimized threshold voltage (V_GS(off) = –1.0 to –2.0 V) and enhanced channel doping profile.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SJ471-E?

The 2SJ471-E has a channel-to-case thermal resistance (θ_ch–c) of 4.17°C/W, measured under standard test conditions (T_c = 25°C). This value is derived from the 30 W channel dissipation rating and 150°C maximum channel temperature. The TO-220CFM package's isolated metal tab enables direct thermal coupling to heatsinks without insulating pads-critical for achieving this low θ_ch–c. Designers must account for interface resistance and heatsink performance to ensure real-world θ_JA meets system requirements. The 2SJ471-E datasheet provides transient thermal impedance curves for pulsed operation.

Can the 2SJ471-E be used in synchronous rectification applications?

Yes-the 2SJ471-E is well-suited for synchronous rectification due to its low R_DS(on) (25 mΩ typ.), fast switching (t_d(on) = 20 ns, t_f = 130 ns), and body-diode reverse recovery time of 70 ns. Its P-channel topology simplifies gate drive in low-side configurations, and the specified V_GS = –4 V operation enables direct control from PWM controllers. The 2SJ471-E's SOA curve also supports repetitive pulse operation typical in SMPS secondaries, making it a validated choice for 12–24 V output stages.

Is the drain terminal of the 2SJ471-E electrically connected to the package tab?

Yes-the drain terminal (Pin 2) of the 2SJ471-E is internally bonded to the metal tab of the TO-220CFM package. This is confirmed by the outline diagram and package dimensions drawing in the datasheet. The "CFM" suffix denotes "Case Isolation Mounting", meaning the tab is electrically isolated from the mounting surface-enabling direct heatsink attachment without insulating hardware while preserving drain potential. This construction is essential for safe, low-inductance thermal management in high-current 2SJ471-E applications.