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Renesas 2SJ495-S12-AZ
- Part No.:
- 2SJ495-S12-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ495-S12-AZ.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:989
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Product details
Overview
2SJ495-S12-AZ from Renesas Electronics is a P-channel enhancement-mode power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It delivers RDS(on) = 30 mΩ max at VGS = –10 V and ID = –15 A, supports –60 V drain-source voltage, and features integrated gate protection diode. Its MP-45F (isolated TO-220) package enables robust thermal management in 24 V/48 V bus systems.
For engineers reviewing the 2SJ495-S12-AZ datasheet, 2SJ495-S12-AZ pinout, 2SJ495-S12-AZ application, or 2SJ495-S12-AZ equivalent, key selection criteria include verified RDS(on) at –4 V gate drive, body diode reverse recovery charge (Qrr = 400 nC), safe operating area under pulsed load conditions, and thermal resistance Rth(ch-c) = 3.57 °C/W for heatsink-limited designs.
Technical Context
This device operates as a low-side switch in buck converters, H-bridge half-bridges, and battery protection circuits. Its negative threshold voltage (VGS(off) = –1.0 to –2.0 V) ensures reliable turn-off with standard logic-level gate drivers, while its high input capacitance (Ciss = 4120 pF typ.) necessitates careful gate driver sizing for <220 ns rise time.
The built-in gate-source ESD protection diode reduces external component count but does not eliminate need for external transient suppression. Its forward transfer admittance |yfs| = 12–24 S confirms strong transconductance for fast current regulation, and QG = 140 nC at ID = –30 A defines minimum gate driver peak current requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V - Maximum blocking voltage in high-side or synchronous rectifier configurations |
| RDS(on)1 | 30 mΩ max @ VGS = –10 V, ID = –15 A - Enables <0.7 W conduction loss at rated DC current |
| ID(DC) | –30 A - Continuous drain current rating with case temperature ≤ 25°C and adequate heatsinking |
| QG | 140 nC - Total gate charge defining minimum driver energy per switching cycle |
| Rth(ch-c) | 3.57 °C/W - Channel-to-case thermal resistance enabling 35 W dissipation with 125°C channel limit |
| Qrr | 400 nC - Reverse recovery charge of intrinsic body diode affecting cross-conduction losses in bridge topologies |
| VF(S-D) | 0.8–1.5 V @ IF = 30 A - Forward voltage drop of source-drain body diode during freewheeling |
Pinout & Package
2SJ495-S12-AZ uses the MP-45F package - an isolated TO-220 variant with electrically insulated tab, allowing direct mounting to heatsinks without insulating washers. The package complies with JEDEC TO-220AB mechanical standards and provides 15.0 mm × 12.0 mm footprint with 13.5 mm minimum height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives negative gate voltage relative to source to modulate channel conductivity; requires ESD-safe handling |
| 2 (Drain) | High-side current terminal | Connected to negative rail or load return path; electrically isolated from tab in MP-45F package |
| 3 (Source) | Reference terminal | Serves as common reference for gate drive and current sensing; tied to system ground in low-side switch configuration |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) at –4 V drive | RDS(on)2 = 56 mΩ max enables compatibility with 5 V logic-level controllers without level-shifting |
| Built-in gate protection diode | Integrated Zener-rated gate-source diode suppresses ±20 V AC transients, reducing external TVS count |
| High pulsed current capability | ID(pulse) = –120 A (PW ≤ 10 µs) supports short-circuit withstand in motor stall or overload events |
| Low output capacitance | COSS = 1750 pF typ. minimizes Miller-effect-induced switching delay in high-frequency PWM stages |
| Robust SOA at elevated temperature | Forward bias SOA curve validated up to Tch = 150°C supports operation in sealed industrial enclosures |
Applications
| Industrial DC Motor Control | 48 V Telecom Power Distribution |
|---|---|
|
Use Scenario: Bidirectional H-bridge driver for 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element in complementary pair; handles continuous –25 A load current with <100 ns dead-time control. Use Value: RDS(on) ≤ 30 mΩ limits conduction loss to <19 W at full load, enabling compact heatsink design per channel. |
Use Scenario: OR-ing FET in redundant 48 V telecom rectifier modules compliant with GR-1089 immunity requirements. IC Role / Device Role / Timing Role: Reverse-polarity blocking switch placed between rectifier output and system bus; activated only during normal operation. Use Value: Body diode VF(S-D) ≤ 1.5 V ensures low forward drop during startup before gate turn-on, minimizing bus voltage sag. |
| Uninterruptible Power Supply (UPS) Inverter | Industrial Battery Management System |
|
Use Scenario: Half-bridge leg in 1 kVA offline UPS inverter stage converting 360 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: High-side P-channel switch synchronized with N-channel low-side; driven by isolated gate driver with 10 Ω series resistance. Use Value: Qrr = 400 nC and trr = 160 ns enable controlled commutation with <5% efficiency penalty versus SiC alternatives. |
Use Scenario: Cell-balancing discharge switch in 16-cell Li-ion battery pack for material handling equipment. IC Role / Device Role / Timing Role: Precision-controlled shunt path activated during constant-voltage charging phase to equalize cell voltages. Use Value: RDS(on) stability over –55 to +150°C ensures consistent balancing current across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP10P60P | RDS(on) = 550 mΩ @ –10 V; higher VDSS = –600 V; TO-220 non-isolated | Designed for high-voltage flyback snubbers, not optimized for low-VDS conduction efficiency | Select when >400 V blocking required; avoid for 48 V systems due to excessive conduction loss |
| IRF9540NPBF | RDS(on) = 200 mΩ @ –10 V; same MP-45F package; no built-in gate protection diode | Legacy industrial replacement with lower cost but requires external gate clamping | Acceptable where gate drive is well-regulated and layout minimizes ringing; verify ESD robustness in final assembly |
Compared with IXTP10P60P and IRF9540NPBF, the 2SJ495-S12-AZ offers superior conduction efficiency below 60 V and integrated gate protection - critical for field-replaceable modules where layout constraints limit external protection components.
Availability
2SJ495-S12-AZ is available at Aetrix Electronics and suitable for industrial motor control, telecom power distribution, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term manufacturability.
Supply support for 2SJ495-S12-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial and automotive markets.
The 2SJ495-S12-AZ belongs to Renesas' legacy industrial power MOSFET family, engineered specifically for high-reliability DC switching in harsh environments - emphasizing rugged SOA, gate robustness, and thermal stability over high-frequency optimization.
FAQ
What is the maximum continuous drain current rating for the 2SJ495-S12-AZ under real-world PCB heatsinking conditions?
The 2SJ495-S12-AZ is rated for ID(DC) = –30 A at TC = 25°C with infinite heatsink. Under typical 2-layer PCB with 10 cm² copper pour and 1 mm thermal via array, derating to –18 A is recommended to maintain Tch ≤ 125°C. Actual current depends on ambient temperature, airflow, and heatsink interface resistance - the 2SJ495-S12-AZ datasheet provides SOA curves for precise boundary calculation.
Does the 2SJ495-S12-AZ have a built-in body diode, and what are its key conduction parameters?
Yes, the 2SJ495-S12-AZ integrates a source-drain body diode with VF(S-D) = 0.8–1.5 V at IF = 30 A and reverse recovery time trr = 160 ns. Its Qrr = 400 nC at di/dt = 100 A/µs defines switching loss contribution in synchronous rectification or freewheeling paths - critical for evaluating efficiency in buck or half-bridge topologies using the 2SJ495-S12-AZ.
Can the 2SJ495-S12-AZ be driven directly from a 3.3 V microcontroller GPIO without level shifting?
No. The 2SJ495-S12-AZ requires VGS ≤ –4 V for guaranteed RDS(on) ≤ 56 mΩ and full enhancement. A 3.3 V GPIO cannot produce negative gate voltage relative to source. Driving the 2SJ495-S12-AZ directly would result in weak conduction (RDS(on) > 200 mΩ) and thermal runaway. A dedicated negative gate driver or level-shifting circuit is mandatory for proper 2SJ495-S12-AZ operation.
What is the meaning of "S12-AZ" suffix in the 2SJ495-S12-AZ part number?
The "S12-AZ" suffix denotes Renesas' internal packaging and marking variant: "S12" specifies MP-45F (isolated TO-220) leadframe plating and mold compound, while "AZ" indicates tape-and-reel packaging per JIS C 0806 with 50 pcs/reel and RoHS-compliant finish. This distinguishes it from bulk-packaged or non-isolated variants like 2SJ495-Z.
How does the gate protection diode in the 2SJ495-S12-AZ function, and what external protection is still required?
The 2SJ495-S12-AZ includes an internal Zener diode between gate and source rated for ±20 V AC and –20 V DC. It clamps ESD transients but does not protect against sustained overvoltage or fast-rising inductive spikes. External gate resistors (10–47 Ω), RC snubbers, and TVS diodes remain necessary for robust operation in motor drive or relay-switching applications where the 2SJ495-S12-AZ may experience >10 V/ns dv/dt.
2SJ495-S12-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ495-S12-AZ FAQ
1.How can I place an order for 2SJ495-S12-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ495-S12-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ495-S12-AZ reliable?
The price and inventory of 2SJ495-S12-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ495-S12-AZ is usually 5 days.
3.What payment methods are accepted for 2SJ495-S12-AZ?
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4.How is shipping managed for 2SJ495-S12-AZ?
2SJ495-S12-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ495-S12-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ495-S12-AZ?
For technical support, including 2SJ495-S12-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ495-S12-AZ requirements.
6.How does Aetrix verify that 2SJ495-S12-AZ is sourced from the original manufacturer or authorized distributors?
All 2SJ495-S12-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ495-S12-AZ meets industry standards.
7.What is the process for return or replacement of 2SJ495-S12-AZ?
All 2SJ495-S12-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ495-S12-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ495-S12-AZ part is unused and in its original packaging.
Return procedure for 2SJ495-S12-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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