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Renesas 2SJ529L06-E
- Part No.:
- 2SJ529L06-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Long Leads, IPak, TO-251AB
- Datasheet:
-
2SJ529L06-E.pdf
- Description:
- 2SJ529L06 - P-CHANNEL POWER MOSF
- Quantity:
- Payment:
- Shipping:
Inventory:55,924
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Product details
Overview
2SJ529L06-E from Renesas Electronics is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and load-switching applications. It features a drain-to-source voltage rating of –60 V, a typical on-resistance of 0.12 Ω at VGS = –10 V, and supports –10 A continuous drain current with 4 V gate drive capability.
For engineers reviewing the 2SJ529L06-E datasheet, 2SJ529L06-E pinout, 2SJ529L06-E application, or 2SJ529L06-E equivalent, this device is selected for robust low-side switching where low conduction loss, fast turn-on/turn-off timing (td(on) = 10 ns typ.), and integrated body diode recovery (trr = 60 ns typ.) are critical in high-efficiency power stages.
Technical Context
This P-channel MOSFET operates as a low-side switch with symmetrical dual-drain terminals (pins 2 and 4) enabling enhanced thermal and current-handling capability. Its gate threshold voltage range (VGS(off) = –1.0 to –2.0 V) ensures reliable enhancement-mode turn-off under nominal bias conditions.
The device employs a DPAK (L)-(2) package (RENESAS code PRSS0004ZD-B) with copper leadframe construction, supporting 20 W channel dissipation at Tc = 25°C and exhibiting RDS(on) stability across –25°C to 125°C case temperature per pulse-test data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V - Withstands reverse-biased drain-source voltage up to 60 V without breakdown, suitable for 48 V bus and industrial power rails. |
| RDS(on) @ VGS = –10 V | 0.12 Ω typ. - Delivers ≤60 mW conduction loss at –5 A, enabling high-efficiency operation in compact thermal layouts. |
| ID (continuous) | –10 A - Supports sustained load currents up to 10 A with proper heatsinking, matching mid-power SMPS and BLDC gate driver stages. |
| tr / tf | 40 ns / 60 ns typ. - Enables >1 MHz switching in synchronous buck or half-bridge topologies with minimal switching loss. |
| Ciss | 580 pF - Low input capacitance reduces gate drive power and improves control loop response in high-frequency PWM circuits. |
| VGS(off) | –1.0 to –2.0 V - Ensures full depletion at logic-level gate voltages, eliminating need for negative bias in 3.3 V/5 V control systems. |
| trr (body diode) | 60 ns typ. - Fast reverse recovery minimizes shoot-through risk and commutation loss in freewheeling paths. |
Pinout & Package
2SJ529L06-E uses the DPAK (L)-(2) surface-mount package (RENESAS code PRSS0004ZD-B), featuring exposed drain pads on pins 2 and 4 for optimal thermal transfer and current sharing. The package measures 16.2 × 4.7 × 1.7 mm with 0.42 g mass and JEITA SC-63 compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal accepting –4 V to –20 V gate drive; low input capacitance enables direct microcontroller interface with minimal buffering. |
| 2 | Drain | Main high-current output path; electrically tied to pin 4 and thermally connected to exposed copper pad for PCB heat sinking. |
| 3 | Source | Reference node for gate drive and current sensing; connects to system ground or low-side shunt resistor in load-switch configurations. |
| 4 | Drain | Second drain terminal-identical to pin 2-provides parallel current path and doubled thermal interface area to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4 V drive | 0.17 Ω typ. at VGS = –4 V enables direct interfacing with 5 V logic or level-shifted microcontroller outputs without gate boosters. |
| High avalanche energy rating | 8.5 mJ (EAR) at Tch = 25°C provides robustness against inductive switching transients in relay/motor drive circuits. |
| Fast body diode recovery | 60 ns trr with di/dt = 50 A/µs ensures clean commutation in synchronous rectification and bidirectional power flow designs. |
| Thermally optimized DPAK-L | θch–c = 6.25°C/W allows 20 W dissipation at Tc = 25°C-supports high-duty-cycle operation with minimal heatsink area. |
| JEDEC SC-63 compliant | Standardized footprint ensures compatibility with automated SMT assembly and reflow profiles across global manufacturing lines. |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter in programmable logic controllers and sensor hubs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with precise dead-time control. Use Value: 0.12 Ω RDS(on) reduces conduction loss by ≥35% vs. comparable 0.18 Ω devices, improving full-load efficiency to >92%. |
Use Scenario: Power distribution switch for interior lighting, window lift, and seat actuation in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Protected load switch with integrated body diode handling inductive kickback during motor stall events. Use Value: 8.5 mJ avalanche energy rating withstands >100,000 cycles of 24 V inductive load interruption without degradation. |
| Motor Drive Half-Bridge Legs | Hot-Swap Power Controllers |
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for robotics and factory automation actuators. IC Role / Device Role / Timing Role: Fast-turning P-channel switch paired with N-channel high-side driver, managing bidirectional current flow. Use Value: 40 ns rise time and 60 ns fall time minimize cross-conduction losses, enabling 20 kHz PWM without excessive heating. |
Use Scenario: Inrush current limiter and fault-isolation switch in modular server power supplies and telecom line cards. IC Role / Device Role / Timing Role: Controlled turn-on switch with soft-start via gate RC network, preventing supply rail collapse during hot-insertion. Use Value: –2.0 V maximum VGS(off) ensures complete cutoff during undervoltage lockout, blocking fault propagation across backplane rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP10P60P | Higher VDSS (–600 V), higher RDS(on) (0.75 Ω), TO-220 package | Suitable for AC mains-connected flyback snubbers-not optimized for high-frequency DC-DC efficiency. | Select when ultra-high voltage isolation is required; avoid for <1 MHz switching due to 1200 pF Ciss. |
| IRF9540NPBF | Same VDSS (–100 V), higher RDS(on) (0.2 Ω), TO-220 package, slower tr/tf (60/120 ns) | Legacy replacement for linear regulator pass elements-lacks DPAK thermal performance for sustained 10 A loads. | Acceptable for lower-frequency (<200 kHz), lower-current (<5 A) designs where PCB space permits through-hole mounting. |
Compared with IXTP10P60P and IRF9540NPBF, the 2SJ529L06-E delivers superior high-frequency efficiency and thermal density via its DPAK-L package and 0.12 Ω RDS(on), making it the preferred choice for space-constrained, high-efficiency 12–48 V power stages requiring >500 kHz operation.
Availability
2SJ529L06-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and telecom power modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for 2SJ529L06-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SJ529L06-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for high-reliability, medium-power switching in harsh-environment applications demanding stable RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current rating for the 2SJ529L06-E?
The 2SJ529L06-E is rated for –10 A continuous drain current (ID) at Tc = 25°C. This rating assumes proper PCB copper area for thermal conduction and derates linearly above 25°C case temperature per the power vs. temperature derating curve in the datasheet. At Tc = 75°C, the usable ID drops to approximately –6.5 A.
Does the 2SJ529L06-E support logic-level gate drive?
Yes-the 2SJ529L06-E is specified for 4 V gate drive operation, with RDS(on) = 0.17 Ω typ. at VGS = –4 V and ID = –5 A. Its VGS(off) range of –1.0 to –2.0 V ensures full turn-off with standard 3.3 V or 5 V microcontroller GPIO, eliminating need for gate driver ICs in many low-to-mid power applications.
What is the thermal resistance from channel to case (θch–c) for the 2SJ529L06-E?
The 2SJ529L06-E has a channel-to-case thermal resistance (θch–c) of 6.25°C/W, measured under pulse-test conditions at Tc = 25°C. This value is derived from the normalized transient thermal impedance curve and enables calculation of junction temperature rise under real-world PCB layout conditions with defined copper area and airflow.
Can the 2SJ529L06-E be used in avalanche mode, and what is its rated energy?
Yes-the 2SJ529L06-E is characterized for repetitive avalanche operation with EAR = 8.5 mJ at Tch = 25°C, IAP = –10 A, and Rg ≥ 50 Ω. This rating applies to single-pulse inductive switching events such as motor commutation or relay de-energization, and must be validated with appropriate gate resistance and layout to avoid localized thermal runaway.
What is the package type and JEITA code for the 2SJ529L06-E?
The 2SJ529L06-E uses the DPAK (L)-(2) surface-mount package, identified by RENESAS package code PRSS0004ZD-B and JEITA code SC-63. Its dimensions are 16.2 × 4.7 × 1.7 mm, with dual drain terminals (pins 2 and 4) and an exposed copper pad for thermal and electrical connection to the PCB.
2SJ529L06-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-251-3 Long Leads, IPak, TO-251AB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 580 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DPAK(L)-(2)
2SJ529L06-E FAQ
1.How can I place an order for 2SJ529L06-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ529L06-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ529L06-E reliable?
The price and inventory of 2SJ529L06-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ529L06-E is usually 5 days.
3.What payment methods are accepted for 2SJ529L06-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ529L06-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ529L06-E?
2SJ529L06-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ529L06-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ529L06-E?
For technical support, including 2SJ529L06-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ529L06-E requirements.
6.How does Aetrix verify that 2SJ529L06-E is sourced from the original manufacturer or authorized distributors?
All 2SJ529L06-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ529L06-E meets industry standards.
7.What is the process for return or replacement of 2SJ529L06-E?
All 2SJ529L06-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ529L06-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ529L06-E part is unused and in its original packaging.
Return procedure for 2SJ529L06-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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