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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ557(0)T1B-AT

Name: 2SJ557(0)T1B-AT
Brand: Renesas
SKU: 2SJ557(0)T1B-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ557(0)T1B-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ557(0)T1B-AT.pdf

Description:: SMALL SIGNAL P-CHANNEL MOSFET

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Product details

Overview

2SJ557(0)T1B-AT from Renesas Electronics is a P-channel MOSFET designed for low-voltage switching applications, featuring R_DS(on) = 155 mΩ max at V_GS = –10 V / I_D = –1.0 A, V_DSS = –30 V, and gate drive compatibility down to –4.0 V - enabling direct interface with 4 V logic in portable power switches.

For engineers reviewing the 2SJ557(0)T1B-AT datasheet, 2SJ557(0)T1B-AT pinout, 2SJ557(0)T1B-AT application, or 2SJ557(0)T1B-AT equivalent, this device is evaluated for compact DC-DC load switching, battery protection circuits, and high-side power control where low gate-threshold operation and SC-96 footprint efficiency are critical.

Technical Context

The 2SJ557(0)T1B-AT operates as a depletion-mode-enhanced P-channel silicon MOSFET with integrated gate-source ESD protection diode. Its V_GS(off) range of –1.0 V to –2.5 V ensures reliable turn-off under nominal bias, while its |y_fs| = 1–2.5 S supports fast current-controlled switching.

Thermal performance is defined for FR-4 mounting (t ≤ 5 sec), delivering P_T2 = 1.25 W with r_th(ch–A) transient response optimized for pulsed loads up to 10 µs. The body diode exhibits t_rr = 28 ns and Q_rr = 7.8 nC, suitable for synchronous rectification in low-duty-cycle topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–30 V - maximum blocking voltage for low-voltage DC bus switching
R_DS(on)1	155 mΩ max @ V_GS = –10 V, I_D = –1.0 A - enables <150 mW conduction loss at 1 A
V_GS(off)	–1.0 to –2.5 V - guarantees full enhancement-mode cutoff with standard logic-level bias
Q_G	2.8 nC - low gate charge supports efficient 1–10 MHz PWM drive with minimal driver loss
t_d(off)	133 ns - defines minimum off-time in high-frequency switching regulators
I_D(pulse)	±10 A @ PW ≤ 10 µs - supports short-circuit or inrush current handling in protection ICs
C_iss	312 pF - determines Miller-effect sensitivity and gate-drive impedance requirements

Pinout & Package

2SJ557(0)T1B-AT is housed in the SC-96 (Mini Mold Thin Type) surface-mount package - 2.9 mm × 1.5 mm × 0.95 mm - optimized for space-constrained portable PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts negative gate voltage relative to source; requires external ESD protection if exposed to >±20 V transients
2 (Source)	Reference node	Serves as common return for gate drive and load current; connects to higher potential in high-side switch configuration
3 (Drain)	Power output	Carries switched load current; thermally coupled to copper pad on FR-4 board per datasheet mounting spec

Key Features

Feature	Design Value
4 V gate drive capability	Operates fully enhanced at V_GS = –4.0 V (R_DS(on)3 = 290 mΩ), eliminating need for level-shifting in 3.3/4 V systems
Low R_DS(on) at low V_GS	R_DS(on)2 = 255 mΩ @ –4.5 V enables <260 mW loss at 1 A - critical for thermal-limited handheld enclosures
Fast switching with low Q_GD	Q_GD = 1.2 nC @ V_GS = –4.0 V minimizes Miller plateau duration and improves hard-switching efficiency
Integrated gate-source ESD diode	Provides Class 2 HBM protection (per marking note); external TVS still required for system-level surge immunity
SC-96 thin-profile package	0.95 mm height allows stacking under batteries or displays in ultra-thin consumer devices

Applications

Portable Power Switch	Battery Protection Circuit
Use Scenario: High-side load switch controlling power to Bluetooth/Wi-Fi modules in wearables. IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled series pass element between battery and subsystem rail. Use Value: Low 4 V gate threshold enables direct MCU GPIO control without charge pump; 155 mΩ R_DS(on) limits dropout to <150 mV at 1 A.	Use Scenario: Overcurrent and reverse-polarity protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Reverse-connected P-MOSFET providing bidirectional fault isolation during charge/discharge cycles. Use Value: Body diode forward voltage V_F(S–D) = 0.84 V at 2.5 A ensures low-loss reverse conduction; t_rr = 28 ns prevents shoot-through in dual-MOSFET protection ICs.
USB OTG Power Delivery	LED Backlight Dimming
Use Scenario: VBUS enable switch in USB On-The-Go host adapters supporting 5 V/1.5 A negotiation. IC Role / Device Role / Timing Role: High-side switch isolating downstream port from upstream VBUS during enumeration or fault conditions. Use Value: I_D(pulse) = ±10 A handles hot-plug inrush; Q_G = 2.8 nC allows clean turn-on within USB 2.0 suspend/resume timing windows.	Use Scenario: PWM-controlled current sink for white LED strings in smartwatch displays. IC Role / Device Role / Timing Role: Low-side switch (source grounded) modulating LED current via duty-cycle-controlled gate drive. Use Value: C_iss = 312 pF and t_f = 85 ns support stable 1–5 kHz dimming without audible noise or EMI spikes.

Portable Power Switch

Battery Protection Circuit

Use Scenario: High-side load switch controlling power to Bluetooth/Wi-Fi modules in wearables.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled series pass element between battery and subsystem rail.

Use Value: Low 4 V gate threshold enables direct MCU GPIO control without charge pump; 155 mΩ R_DS(on) limits dropout to <150 mV at 1 A.

Use Scenario: Overcurrent and reverse-polarity protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Reverse-connected P-MOSFET providing bidirectional fault isolation during charge/discharge cycles.

Use Value: Body diode forward voltage V_F(S–D) = 0.84 V at 2.5 A ensures low-loss reverse conduction; t_rr = 28 ns prevents shoot-through in dual-MOSFET protection ICs.

USB OTG Power Delivery

LED Backlight Dimming

Use Scenario: VBUS enable switch in USB On-The-Go host adapters supporting 5 V/1.5 A negotiation.

IC Role / Device Role / Timing Role: High-side switch isolating downstream port from upstream VBUS during enumeration or fault conditions.

Use Value: I_D(pulse) = ±10 A handles hot-plug inrush; Q_G = 2.8 nC allows clean turn-on within USB 2.0 suspend/resume timing windows.

Use Scenario: PWM-controlled current sink for white LED strings in smartwatch displays.

IC Role / Device Role / Timing Role: Low-side switch (source grounded) modulating LED current via duty-cycle-controlled gate drive.

Use Value: C_iss = 312 pF and t_f = 85 ns support stable 1–5 kHz dimming without audible noise or EMI spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RV3001AP	V_DSS = –30 V, R_DS(on) = 145 mΩ @ –10 V, but V_GS(off) = –0.7 to –1.5 V - less negative threshold increases risk of partial turn-on at 3.3 V logic	Higher leakage IDSS = –1 µA vs. –10 µA - marginally better for ultra-low-power sleep modes	Prefer when tighter R_DS(on) tolerance is needed and gate drive can be stabilized at –10 V
ON Semiconductor NTMFS4C09N	V_DSS = –30 V, R_DS(on) = 12.5 mΩ @ –10 V, but uses SO-8FL package - 5× larger footprint and 3× higher thermal resistance	Q_G = 12.5 nC - demands stronger gate driver and increases switching loss above 500 kHz	Select only when conduction loss dominates design and board area is unconstrained

Compared with RV3001AP and NTMFS4C09N, the 2SJ557(0)T1B-AT uniquely balances sub-300 mΩ R_DS(on) at –4.5 V, SC-96 footprint, and robust 133 ns t_d(off) - making it optimal for space- and gate-drive-limited portable power switches where moderate conduction loss is acceptable.

Availability

2SJ557(0)T1B-AT is available at Aetrix Electronics and suitable for portable power switches, battery protection circuits, and USB OTG power delivery requiring stable component supply across industrial and consumer production programs.

Supply support for 2SJ557(0)T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and consumer markets.

The 2SJ557 belongs to Renesas' legacy discrete MOSFET product line, engineered specifically for low-voltage, low-power switching in portable electronics - emphasizing gate-threshold compatibility with 3.3–4 V logic and compact packaging.

FAQ

What is the maximum continuous drain current rating for the 2SJ557(0)T1B-AT?

The 2SJ557(0)T1B-AT has a DC drain current rating of ±2.5 A at T_A = 25°C when mounted on an FR-4 board (t ≤ 5 sec). This rating assumes proper thermal layout per datasheet Note 2; derating applies above 25°C ambient, with full derating to zero at 125°C ambient per the forward-bias safe operating area curve.

Does the 2SJ557(0)T1B-AT include built-in ESD protection?

Yes, the 2SJ557(0)T1B-AT integrates a gate-to-source protection diode as noted in the equivalent circuit diagram. However, the datasheet explicitly states that "an additional protection circuit is externally required" if voltages exceeding the rated ±20 V gate-source limit may occur - meaning the internal diode provides only basic handling of handling-level ESD, not system-level surge immunity.

Can the 2SJ557(0)T1B-AT be used in high-side switch configurations?

Yes, the 2SJ557(0)T1B-AT is a P-channel MOSFET optimized for high-side switching. Its –30 V V_DSS, –4.0 V gate-threshold capability, and SC-96 package allow direct integration into high-side load switches where the source connects to the positive rail and the drain supplies the load - commonly implemented in portable device power sequencing.

What is the typical gate charge requirement for the 2SJ557(0)T1B-AT?

The 2SJ557(0)T1B-AT has a total gate charge (Q_G) of 2.8 nC, measured at V_DD = –10 V. This low value enables efficient driving from standard GPIO pins or small gate drivers, reducing switching losses and simplifying layout - especially valuable in battery-powered systems where driver power consumption must be minimized.

Is the 2SJ557(0)T1B-AT suitable for automotive applications?

No, the 2SJ557(0)T1B-AT is classified as a Standard-grade Renesas product intended for computers, office equipment, audio/video gear, and portable electronics - not transportation or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature screening, or automotive-specific reliability testing; use in automotive contexts requires formal qualification by the end customer and written consent from Renesas.

2SJ557(0)T1B-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ557(0)T1B-AT FAQ

1.How can I place an order for 2SJ557(0)T1B-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ557(0)T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ557(0)T1B-AT reliable?

The price and inventory of 2SJ557(0)T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ557(0)T1B-AT is usually 5 days.

3.What payment methods are accepted for 2SJ557(0)T1B-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ557(0)T1B-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ557(0)T1B-AT?

2SJ557(0)T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ557(0)T1B-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ557(0)T1B-AT?

For technical support, including 2SJ557(0)T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ557(0)T1B-AT requirements.

6.How does Aetrix verify that 2SJ557(0)T1B-AT is sourced from the original manufacturer or authorized distributors?

All 2SJ557(0)T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ557(0)T1B-AT meets industry standards.

7.What is the process for return or replacement of 2SJ557(0)T1B-AT?

All 2SJ557(0)T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ557(0)T1B-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ557(0)T1B-AT part is unused and in its original packaging.

Return procedure for 2SJ557(0)T1B-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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