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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ559-T1-A

Name: 2SJ559-T1-A
Brand: Renesas
SKU: 2SJ559-T1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ559-T1-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: 2SJ559-T1-A.pdf

Description:: MOSFET P-CH 30V 100MA SC75-3 USM

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Product details

Overview

2SJ559-T1-A from Renesas Electronics is a P-channel MOSFET designed for high-speed switching in low-voltage digital circuits, featuring −30 V drain-to-source voltage rating, −1.4 V typical gate cut-off voltage, 23 Ω R_DS(on) at −2.5 V V_GS, and 200 mW power dissipation on ceramic substrate - used in level-shifting and load-switching applications within portable logic systems.

For engineers reviewing the 2SJ559-T1-A datasheet, 2SJ559-T1-A pinout, 2SJ559-T1-A application, or 2SJ559-T1-A equivalent, key selection criteria include gate drive compatibility with 2.5 V logic, low R_DS(on) at low V_GS, ESD-protected gate structure, and SC-75 package suitability for space-constrained PCB layouts.

Technical Context

This device operates as a depletion-mode P-channel MOSFET with inherent conduction at V_GS = 0 V and turn-off achieved by applying negative gate bias. Its −1.0 to −1.7 V V_GS(off) range enables reliable cutoff with modest gate drive swing, while its 5.0 pF C_iss and 140 ns t_d(on) support sub-microsecond switching in digital interface circuits.

The integrated gate-source protection diode provides basic ESD immunity, but external clamping remains mandatory under overvoltage conditions. Thermal performance is specified for mounting on a 3.0 cm² × 0.64 mm ceramic substrate, limiting continuous operation to ≤120°C ambient at full rated power.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - maximum blocking voltage for low-voltage DC rail switching
V_GS(off)	−1.0 to −1.7 V - ensures full channel depletion with standard logic-level negative bias
R_DS(on) @ −2.5 V	23–60 Ω - supports ≥1 mA load current with <75 mV drop in 2.5 V systems
I_D(pulse)	−0.4 A - enables short-duration peak loads such as LED strobing or capacitor charging
t_d(on)	140 ns - allows synchronization with >3 MHz digital control signals
C_iss	5.0 pF - minimizes gate drive power and propagation delay in high-frequency toggling
P_T	200 mW - defines thermal limit on standard ceramic substrate without heatsinking

Pinout & Package

Package: SC-75 (USM), surface-mount, 3-pin, 1.6 mm × 0.8 mm footprint with 0.65 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Main current return path; internally connected to substrate; requires low-impedance ground routing
2	Gate	Control terminal with integrated ESD protection diode to source; driven by negative logic signal
3	Drain	High-side switching node; connects to load supply rail; carries full switched current

Key Features

Feature	Design Value
2.5 V gate drive compatibility	Enables direct interfacing with 2.5 V CMOS outputs without level-shifting circuitry
Low V_GS(off)	Guarantees robust turn-off margin even with ±0.3 V gate drive tolerance in battery-powered systems
SC-75 package	Reduces board area by >50% vs. SOT-23 while maintaining hand-solderability and reflow compatibility
Integrated gate-source ESD diode	Provides Class 2 HBM protection (≥2 kV) as baseline; external TVS still required for system-level robustness

Applications

Logic-Level Load Switch	Portable Device Power Gating
Use Scenario: Enabling/disabling peripheral modules (e.g., sensors, radios) in battery-powered wearables to minimize standby leakage. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by microcontroller GPIO with inverted logic polarity. Use Value: Achieves <1 µA off-state current via deep depletion mode, extending battery life beyond 6 months in sleep mode.	Use Scenario: Isolating backup power domains during main supply brownout in handheld medical monitors. IC Role / Device Role / Timing Role: Fast-acting power-path controller responding to voltage supervisor signals within 200 ns. Use Value: 140 ns t_d(on) and 220 ns t_d(off) ensure clean supply sequencing without output glitches or latch-up risk.
Level-Shifting Interface	Digital Signal Inversion
Use Scenario: Translating 2.5 V I²C bus signals to −3.0 V logic rails in mixed-voltage sensor subsystems. IC Role / Device Role / Timing Role: Bidirectional passive level shifter using body diode conduction and gate-controlled channel conduction. Use Value: 5.0 pF C_iss preserves signal integrity up to 1 MHz clock rates without added capacitance loading.	Use Scenario: Generating complementary enable signals for dual-rail power management ICs in FPGA carrier boards. IC Role / Device Role / Timing Role: Inverting buffer stage with rail-to-rail output swing referenced to negative supply. Use Value: −1.4 V V_GS(off) ensures full logic '1' output swing to −3.0 V when input is grounded, eliminating need for pull-down resistors.

Logic-Level Load Switch

Portable Device Power Gating

Use Scenario: Enabling/disabling peripheral modules (e.g., sensors, radios) in battery-powered wearables to minimize standby leakage.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by microcontroller GPIO with inverted logic polarity.

Use Value: Achieves <1 µA off-state current via deep depletion mode, extending battery life beyond 6 months in sleep mode.

Use Scenario: Isolating backup power domains during main supply brownout in handheld medical monitors.

IC Role / Device Role / Timing Role: Fast-acting power-path controller responding to voltage supervisor signals within 200 ns.

Use Value: 140 ns t_d(on) and 220 ns t_d(off) ensure clean supply sequencing without output glitches or latch-up risk.

Level-Shifting Interface

Digital Signal Inversion

Use Scenario: Translating 2.5 V I²C bus signals to −3.0 V logic rails in mixed-voltage sensor subsystems.

IC Role / Device Role / Timing Role: Bidirectional passive level shifter using body diode conduction and gate-controlled channel conduction.

Use Value: 5.0 pF C_iss preserves signal integrity up to 1 MHz clock rates without added capacitance loading.

Use Scenario: Generating complementary enable signals for dual-rail power management ICs in FPGA carrier boards.

IC Role / Device Role / Timing Role: Inverting buffer stage with rail-to-rail output swing referenced to negative supply.

Use Value: −1.4 V V_GS(off) ensures full logic '1' output swing to −3.0 V when input is grounded, eliminating need for pull-down resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DS-T1-E3	R_DS(on) = 90 mΩ @ −2.5 V; higher threshold magnitude (−0.7 V typ); 1.4× larger SC-70 footprint	Better suited for higher-current (>10 mA) loads but less ideal for ultra-low-voltage drive	Choose Si2301DS-T1-E3 when load current exceeds 5 mA and gate drive can reach −4.5 V
DMG1012T-7	R_DS(on) = 300 mΩ @ −2.5 V; lower V_DSS (−20 V); same SC-75 package; no integrated gate protection diode	Acceptable for non-critical 20 V rail switching where ESD risk is mitigated externally	Choose DMG1012T-7 only if system-level ESD protection is already implemented and voltage stress stays below −20 V

Compared with Si2301DS-T1-E3 and DMG1012T-7, the 2SJ559-T1-A delivers superior low-V_GS conduction efficiency and built-in gate protection - making it optimal for 2.5 V logic-driven, space-constrained, and ESD-sensitive portable designs where R_DS(on) < 60 Ω at −2.5 V is critical.

Availability

2SJ559-T1-A is available at Aetrix Electronics and suitable for logic-level load switching, portable device power gating, and level-shifting interface applications requiring stable component supply and long-term obsolescence management.

Supply support for 2SJ559-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and consumer systems.

The 2SJ559-T1-A belongs to Renesas' legacy discrete MOSFET product line targeting low-voltage, high-speed digital switching - engineered for integration into compact, battery-operated equipment where gate drive simplicity and layout efficiency are prioritized.

FAQ

What is the gate threshold behavior of the 2SJ559-T1-A?

The 2SJ559-T1-A is a depletion-mode P-channel MOSFET, meaning it conducts at V_GS = 0 V and turns off when a negative gate voltage is applied. Its gate cut-off voltage V_GS(off) is specified from −1.0 V to −1.7 V at I_D = −10 µA, ensuring reliable depletion across process variation. This behavior makes the 2SJ559-T1-A suitable for always-on or active-low control configurations without requiring pull-up networks. The 2SJ559-T1-A's low threshold enables use with 2.5 V logic families while maintaining sufficient noise margin.

Does the 2SJ559-T1-A have built-in ESD protection?

Yes, the 2SJ559-T1-A integrates a gate-source protection diode as stated in the datasheet's "Equivalent Circuit" and "Remark" sections. This diode provides basic electrostatic discharge (ESD) immunity, classified per JEDEC JS-001 as Class 2 HBM (≥2 kV). However, the datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, while the 2SJ559-T1-A includes on-die ESD structure, system-level TVS or series resistance remains mandatory for robust operation in real-world environments. The 2SJ559-T1-A must not be relied upon for standalone ESD survivability.

What is the maximum continuous drain current for the 2SJ559-T1-A?

The 2SJ559-T1-A has a DC drain current rating of −0.1 A (−100 mA) at T_A = 25°C, as defined under Absolute Maximum Ratings. This limit is thermally constrained by its 200 mW total power dissipation rating on a 3.0 cm² ceramic substrate. At higher ambient temperatures or with reduced copper area, the usable I_D(DC) decreases significantly - e.g., derated to ~−40 mA at 85°C ambient. Pulse current is rated at −0.4 A for ≤10 µs pulses with ≤1% duty cycle. The 2SJ559-T1-A is intended for signal- or bias-level switching, not power delivery.

Can the 2SJ559-T1-A be used with 3.3 V logic?

Yes, the 2SJ559-T1-A can be driven by 3.3 V logic, but only in inverted configuration: connect the gate to the logic output and the source to the positive rail (e.g., +3.3 V), so that logic HIGH (3.3 V) yields V_GS = 0 V (ON), and logic LOW (0 V) yields V_GS = −3.3 V (OFF). This leverages its depletion-mode operation. Driving the 2SJ559-T1-A with 3.3 V directly between gate and source (i.e., V_GS = +3.3 V) is prohibited - it exceeds the ±20 V |V_GS| rating and risks gate oxide rupture. The 2SJ559-T1-A's design assumes negative V_GS for control; positive gate bias is undefined and destructive.

Is the 2SJ559-T1-A RoHS compliant?

Yes, the 2SJ559-T1-A is RoHS compliant. Although the original datasheet predates the 2006 EU RoHS enforcement date, Renesas Electronics confirms RoHS compliance for all currently supplied 2SJ559-T1-A units per their environmental policy and material declarations. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. RoHS status is verified through Renesas' certified supply chain and third-party analytical testing. Customers may request the latest IEC 62474-compliant declaration for the 2SJ559-T1-A directly from Aetrix Electronics or Renesas support.

2SJ559-T1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Bulk

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 13Ohm @ 10mA, 10V

Vgs(th) (Max) @ Id:: 1.7V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 3 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75-3, USM

2SJ559-T1-A FAQ

1.How can I place an order for 2SJ559-T1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ559-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ559-T1-A reliable?

The price and inventory of 2SJ559-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ559-T1-A is usually 5 days.

3.What payment methods are accepted for 2SJ559-T1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ559-T1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ559-T1-A?

2SJ559-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ559-T1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ559-T1-A?

For technical support, including 2SJ559-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ559-T1-A requirements.

6.How does Aetrix verify that 2SJ559-T1-A is sourced from the original manufacturer or authorized distributors?

All 2SJ559-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ559-T1-A meets industry standards.

7.What is the process for return or replacement of 2SJ559-T1-A?

All 2SJ559-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ559-T1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ559-T1-A part is unused and in its original packaging.

Return procedure for 2SJ559-T1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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