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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ601-ZK-E1-AZ

Name: 2SJ601-ZK-E1-AZ
Brand: Renesas
SKU: 2SJ601-ZK-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ601-ZK-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SJ601-ZK-E1-AZ.pdf

Description:: MP-3ZK

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Product details

Overview

2SJ601-ZK-E1-AZ from Renesas Electronics is a P-channel power MOSFET designed for high-current switching in solenoid, motor, and lamp driver circuits. It delivers R_DS(on)1 = 31 mΩ max at V_GS = –10 V and I_D = –18 A, supports –60 V drain-to-source voltage, and handles –120 A pulsed drain current in TO-252 (MP-3Z) package.

For engineers reviewing the 2SJ601-ZK-E1-AZ datasheet, 2SJ601-ZK-E1-AZ pinout, 2SJ601-ZK-E1-AZ application, or 2SJ601-ZK-E1-AZ equivalent, key selection criteria include low gate charge (Q_G = 63 nC), avalanche ruggedness (E_AS = 123 mJ), and dual-threshold on-resistance performance across V_GS = –4.0 V and –10 V drive conditions.

Technical Context

This device operates as a high-side or low-side switch in DC power control systems, leveraging its built-in gate protection diode and robust body diode (V_F(S-D) = 1.0 V at 36 A). Its forward transfer admittance |y_fs| reaches 30 S typical, enabling fast, high-gain switching response under –18 A load conditions.

The 2SJ601-ZK-E1-AZ features optimized capacitance profile (C_iss = 3300 pF, C_rss = 230 pF) and fast switching times (t_d(on) = 11 ns, t_f = 53 ns), making it suitable for PWM-driven loads where gate drive efficiency and dv/dt immunity are critical. Avalanche capability is validated per test circuit with V_DD = –30 V, R_G = 25 Ω, and T_ch start = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–60 V - Maximum blocking voltage in off-state; defines safe operating range for 48 V automotive and industrial bus applications.
R_DS(on)1	31 mΩ max at V_GS = –10 V, I_D = –18 A - Enables <1 W conduction loss at rated DC current, reducing heatsink requirements.
R_DS(on)2	46 mΩ max at V_GS = –4.0 V, I_D = –18 A - Supports logic-level gate drive compatibility with 5 V microcontrollers or ASIC outputs.
Q_G	63 nC - Total gate charge determines required gate driver peak current and switching energy; enables efficient 100 kHz+ PWM operation.
E_AS	123 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients without external snubbers.
t_r/t_f	12 ns / 53 ns - Fast rise/fall times minimize switching losses and EMI generation in high-frequency power stages.
I_D(pulse)	–120 A - Peak pulsed current capability supports surge loads such as motor startup or solenoid pull-in.

Pinout & Package

2SJ601-ZK-E1-AZ is housed in TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 mm × 9.5 mm × 2.5 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative gate voltage to turn on; requires ESD protection due to integrated gate-source diode (not sufficient alone).
2 (Drain)	High-side power node	Connected to load supply rail; electrically tied to exposed metal tab (fin) for thermal conduction and current return path.
3 (Source)	Power return / reference	Serves as common return for load current and gate drive reference; source terminal must be routed with low-inductance layout.

Key Features

Feature	Design Value
Built-in gate protection diode	ESD-rated diode between gate and source prevents damage from ±20 V transient events; external clamping still required for system-level surges.
Low R_DS(on) at logic-level drive	46 mΩ max at V_GS = –4.0 V enables direct interface with 5 V CMOS outputs without level-shifting circuitry.
High avalanche energy rating	123 mJ single-pulse capability allows safe operation in inductive switching without snubber networks in many 24–48 V designs.
Fast switching with low Q_GD	16 nC gate-to-drain charge minimizes Miller plateau duration, improving controllability during hard-switching transitions.
Body diode with low V_F	1.0 V forward voltage at 36 A supports freewheeling in H-bridge or buck configurations with minimal conduction loss.

Applications

Automotive Door Lock Actuator	Industrial DC Motor Starter
Use Scenario: Driving 12 V solenoid-based door lock mechanism requiring 20 A peak current and rapid on/off cycling. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery to solenoid coil; operates in burst-mode with 100 ms on-time. Use Value: Low R_DS(on)2 ensures full activation even with vehicle battery sag to 9 V, while avalanche rating absorbs coil flyback energy.	Use Scenario: Starting brushed DC motors in factory automation conveyors, subject to repeated stall and restart cycles. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration managing bidirectional motor current up to 36 A DC. Use Value: Robust body diode (I_F = 36 A) and reverse recovery time (t_rr = 52 ns) reduce shoot-through risk and heat generation during commutation.
LED Headlamp Dimming Module	PLC Output Driver Stage
Use Scenario: PWM-controlled high-brightness LED array (48 V, 15 A) in commercial vehicle lighting with thermal constraints. IC Role / Device Role / Timing Role: High-side constant-current switch modulated at 1–5 kHz; gate driven by isolated PWM controller. Use Value: 63 nC Q_G and 11 ns t_d(on) enable precise dimming resolution and minimal dead-time distortion.	Use Scenario: Solid-state replacement for electromechanical relay in programmable logic controller output card driving 24 V DC solenoids. IC Role / Device Role / Timing Role: Final-stage power switch interfacing with optocoupled logic; must survive 100,000+ switching cycles. Use Value: 150°C channel temperature rating and 1.92°C/W junction-to-case thermal resistance ensure long-term reliability under continuous 1 A load.

Automotive Door Lock Actuator

Industrial DC Motor Starter

Use Scenario: Driving 12 V solenoid-based door lock mechanism requiring 20 A peak current and rapid on/off cycling.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery to solenoid coil; operates in burst-mode with 100 ms on-time.

Use Value: Low R_DS(on)2 ensures full activation even with vehicle battery sag to 9 V, while avalanche rating absorbs coil flyback energy.

Use Scenario: Starting brushed DC motors in factory automation conveyors, subject to repeated stall and restart cycles.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration managing bidirectional motor current up to 36 A DC.

Use Value: Robust body diode (I_F = 36 A) and reverse recovery time (t_rr = 52 ns) reduce shoot-through risk and heat generation during commutation.

LED Headlamp Dimming Module

PLC Output Driver Stage

Use Scenario: PWM-controlled high-brightness LED array (48 V, 15 A) in commercial vehicle lighting with thermal constraints.

IC Role / Device Role / Timing Role: High-side constant-current switch modulated at 1–5 kHz; gate driven by isolated PWM controller.

Use Value: 63 nC Q_G and 11 ns t_d(on) enable precise dimming resolution and minimal dead-time distortion.

Use Scenario: Solid-state replacement for electromechanical relay in programmable logic controller output card driving 24 V DC solenoids.

IC Role / Device Role / Timing Role: Final-stage power switch interfacing with optocoupled logic; must survive 100,000+ switching cycles.

Use Value: 150°C channel temperature rating and 1.92°C/W junction-to-case thermal resistance ensure long-term reliability under continuous 1 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 200 mΩ @ V_GS = –10 V; higher on-resistance, lower Q_G (37 nC); TO-220 package.	Limited to lower-current (<8 A) applications; unsuitable for 18 A continuous loads without derating.	Select when cost sensitivity outweighs conduction loss and board space is not constrained.
SiHP25N60E	N-channel 600 V device; requires high-side driver; R_DS(on) = 190 mΩ @ V_GS = 10 V; TO-220FP.	Not directly substitutable without gate drive redesign; better suited for AC-DC primary side switching.	Consider only if N-channel topology and isolation are already implemented in the design.

Compared with IRF9540NPbF and SiHP25N60E, the 2SJ601-ZK-E1-AZ provides superior conduction efficiency at 18 A and surface-mount compatibility, eliminating through-hole assembly while maintaining avalanche ruggedness essential for industrial actuator loads.

Availability

2SJ601-ZK-E1-AZ is available at Aetrix Electronics and suitable for automotive door lock modules, industrial DC motor starters, LED headlamp dimming modules, and PLC output driver stages requiring stable component supply and long-lifecycle support.

Supply support for 2SJ601-ZK-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SJ601-ZK-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting high-reliability discrete switching in 24–48 V DC systems, with emphasis on ruggedness, thermal performance, and ease of integration into compact PCB layouts.

FAQ

What is the maximum continuous drain current rating for the 2SJ601-ZK-E1-AZ?

The 2SJ601-ZK-E1-AZ has a maximum continuous drain current (I_D(DC)) of –36 A at T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C case temperature, reaching zero at 160°C. In practice, sustained operation above –18 A typically requires active cooling or significant PCB copper area due to its 1.92°C/W junction-to-case thermal resistance.

Does the 2SJ601-ZK-E1-AZ have an integrated body diode, and what are its characteristics?

Yes, the 2SJ601-ZK-E1-AZ includes a built-in source-to-drain body diode with forward voltage V_F(S-D) = 1.0 V at I_F = 36 A and reverse recovery time t_rr = 52 ns. This diode supports freewheeling in inductive loads and is rated for full-rated pulsed current, but its reverse recovery charge Q_rr = 108 nC must be accounted for in high-frequency switching layouts to avoid voltage overshoot.

Can the 2SJ601-ZK-E1-AZ be driven directly by a 3.3 V microcontroller GPIO?

No - the 2SJ601-ZK-E1-AZ requires a negative gate-to-source voltage for turn-on, and its R_DS(on)2 specification (46 mΩ max) is defined at V_GS = –4.0 V. A 3.3 V GPIO cannot generate the necessary negative bias; a dedicated gate driver with level-shifting or inverting stage (e.g., using a charge pump or complementary transistor pair) is required to achieve reliable enhancement-mode operation.

What is the significance of the "ZK-E1-AZ" suffix in the 2SJ601-ZK-E1-AZ part number?

The "ZK-E1-AZ" suffix identifies the specific packaging and marking variant: "Z" denotes TO-252 (MP-3Z) package, "K" indicates tape-and-reel packaging per JEDEC standard, "E1" specifies Renesas' internal revision level, and "AZ" confirms RoHS-compliant lead-free finish and halogen-free molding compound per J-STD-609.

How does the avalanche rating of the 2SJ601-ZK-E1-AZ impact circuit design?

The 2SJ601-ZK-E1-AZ is characterized for single-pulse avalanche energy E_AS = 123 mJ and current I_AS = –35 A under defined test conditions (V_DD = –30 V, R_G = 25 Ω, T_ch = 25°C). This rating permits controlled inductive turn-off without external snubbers in many 24–48 V applications, but repetitive avalanche is not guaranteed and must be avoided via proper clamp design or Zener gate limiting.

2SJ601-ZK-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta), 65W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (MP-3ZK)

2SJ601-ZK-E1-AZ FAQ

1.How can I place an order for 2SJ601-ZK-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ601-ZK-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ601-ZK-E1-AZ reliable?

The price and inventory of 2SJ601-ZK-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ601-ZK-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ601-ZK-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ601-ZK-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ601-ZK-E1-AZ?

2SJ601-ZK-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ601-ZK-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ601-ZK-E1-AZ?

For technical support, including 2SJ601-ZK-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ601-ZK-E1-AZ requirements.

6.How does Aetrix verify that 2SJ601-ZK-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ601-ZK-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ601-ZK-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ601-ZK-E1-AZ?

All 2SJ601-ZK-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ601-ZK-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ601-ZK-E1-AZ part is unused and in its original packaging.

Return procedure for 2SJ601-ZK-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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