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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ604-ZJ-E1-AZ

Name: 2SJ604-ZJ-E1-AZ
Brand: Renesas
SKU: 2SJ604-ZJ-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ604-ZJ-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: 2SJ604-ZJ-E1-AZ.pdf

Description:: 2SJ604-ZJ-E1-AZ - SWITCHING P-CH

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Product details

Overview

2SJ604-ZJ-E1-AZ from Renesas Electronics is a P-channel power MOSFET designed for high-current switching in solenoid, motor, and lamp driver circuits. It delivers R_DS(on)1 = 30 mΩ max at V_GS = −10 V and I_D = −23 A, supports −60 V drain-to-source voltage, and features built-in gate protection diode for ESD robustness - deployed in industrial control modules requiring reliable DC load switching.

For engineers reviewing the 2SJ604-ZJ-E1-AZ datasheet, 2SJ604-ZJ-E1-AZ pinout, 2SJ604-ZJ-E1-AZ application, or 2SJ604-ZJ-E1-AZ equivalent, key selection criteria include its TO-263 (D²PAK) package thermal performance, −45 A DC drain current rating, avalanche energy capability (E_AS = 123 mJ), and gate threshold behavior across temperature for robust gate-drive design.

Technical Context

This device operates as a high-side or low-side switch in DC power paths, leveraging its negative gate threshold (V_GS(off) = −1.5 to −2.5 V) and low input capacitance (C_iss = 3300 pF typ.) to enable fast turn-on with minimal drive power. Its body diode exhibits V_F(S-D) = 1.0 V at 45 A, supporting freewheeling in inductive loads without external diodes.

The 2SJ604-ZJ-E1-AZ is rated for single-pulse avalanche operation up to I_AS = −35 A and E_AS = 123 mJ under defined test conditions (V_DD = −30 V, R_G = 25 Ω, T_ch = 25°C), enabling safe operation in unclamped inductive switching events typical in relay and solenoid drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−60 V: Maximum blocking voltage for DC bus applications up to 48 V systems with margin.
R_DS(on)1	30 mΩ max @ V_GS = −10 V, I_D = −23 A: Enables <1.4 W conduction loss at rated current, reducing heatsink requirements.
I_D(DC)	−45 A @ T_C = 25°C: Supports high-power solenoid actuation or motor stall current without derating.
E_AS	123 mJ: Absorbs inductive kickback energy during forced commutation, eliminating need for snubbers in many designs.
C_iss	3300 pF typ. @ V_DS = −10 V: Low gate charge (Q_G = 63 nC) enables efficient driving with standard logic-level gate drivers.
T_ch max	150°C: Allows operation in sealed enclosures or high-ambient industrial environments with appropriate thermal design.
V_GS(off)	−1.5 to −2.5 V: Ensures reliable turn-off with modest negative bias, simplifying gate control in high-side configurations.

Pinout & Package

2SJ604-ZJ-E1-AZ uses the TO-263 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package has three signal terminals and one integral heat sink tab (Drain-connected).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts negative gate voltage to turn on; requires −10 V for full enhancement and low R_DS(on).
2 (Drain)	High-current output node	Internally connected to metal tab; must be soldered to PCB copper pour for thermal management and current return path.
3 (Source)	Reference terminal	Serves as common return for load current and gate drive reference; connects to system ground or high-side rail depending on topology.
Tab (Drain)	Thermal & electrical node	Exposed copper pad tied directly to Drain; provides primary thermal path to PCB and contributes to current-carrying capacity.

Key Features

Feature	Design Value
Super low R_DS(on)	30 mΩ max at −10 V gate drive enables <1.5 W conduction loss at −23 A, reducing thermal stress in compact layouts.
Built-in gate protection diode	ESD-rated gate structure eliminates need for external Zener clamps in most board-level ESD environments (IEC 61000-4-2 Level 2).
Avalanche-rated operation	Guaranteed single-pulse avalanche energy of 123 mJ allows safe unclamped inductive switching without external suppression components.
Low C_iss and Q_G	3300 pF C_iss and 63 nC total gate charge reduce gate driver power demand and improve switching efficiency above 20 kHz.
Robust body diode	V_F(S-D) = 1.0 V at 45 A supports continuous freewheeling in H-bridge or half-bridge topologies without parallel Schottky diodes.

Applications

Solenoid Driver	Motor Control Module
Use Scenario: Driving 24 V/36 V DC solenoids in industrial valve actuators with 500 ms duty cycles and frequent on/off cycling. IC Role / Device Role / Timing Role: High-side P-channel switch controlling solenoid current path; handles peak currents up to −45 A during pull-in phase. Use Value: Low R_DS(on) minimizes coil heating and extends solenoid life; avalanche rating absorbs back-EMF without snubber networks.	Use Scenario: Half-bridge upper-leg switch in 48 V BLDC motor controllers for automated guided vehicles (AGVs). IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch; commutates motor phases with <77 ns turn-off delay for precise timing control. Use Value: Fast switching and low Q_G reduce dead-time losses; TO-263 thermal pad maintains junction temperature below 130°C at 10 kHz PWM.
Lamp Dimming Circuit	Power Supply OR-ing
Use Scenario: PWM-controlled incandescent and halogen lamp dimming in commercial lighting panels with thermal derating constraints. IC Role / Device Role / Timing Role: Low-side switch modulating lamp current at 200–500 Hz; withstands inrush currents up to −120 A pulse. Use Value: R_DS(on)2 = 43 mΩ max at −4 V gate drive enables direct microcontroller GPIO control without level-shifting circuitry.	Use Scenario: Redundant 24 V DC power supply OR-ing in telecom shelf systems requiring hot-swap and fault isolation. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch enabling seamless source switchover with <52 ns fall time. Use Value: Body diode forward voltage of 1.0 V reduces conduction loss versus discrete Schottky solutions; TO-263 package supports >3 W continuous dissipation.

Solenoid Driver

Motor Control Module

Use Scenario: Driving 24 V/36 V DC solenoids in industrial valve actuators with 500 ms duty cycles and frequent on/off cycling.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling solenoid current path; handles peak currents up to −45 A during pull-in phase.

Use Value: Low R_DS(on) minimizes coil heating and extends solenoid life; avalanche rating absorbs back-EMF without snubber networks.

Use Scenario: Half-bridge upper-leg switch in 48 V BLDC motor controllers for automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch; commutates motor phases with <77 ns turn-off delay for precise timing control.

Use Value: Fast switching and low Q_G reduce dead-time losses; TO-263 thermal pad maintains junction temperature below 130°C at 10 kHz PWM.

Lamp Dimming Circuit

Power Supply OR-ing

Use Scenario: PWM-controlled incandescent and halogen lamp dimming in commercial lighting panels with thermal derating constraints.

IC Role / Device Role / Timing Role: Low-side switch modulating lamp current at 200–500 Hz; withstands inrush currents up to −120 A pulse.

Use Value: R_DS(on)2 = 43 mΩ max at −4 V gate drive enables direct microcontroller GPIO control without level-shifting circuitry.

Use Scenario: Redundant 24 V DC power supply OR-ing in telecom shelf systems requiring hot-swap and fault isolation.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch enabling seamless source switchover with <52 ns fall time.

Use Value: Body diode forward voltage of 1.0 V reduces conduction loss versus discrete Schottky solutions; TO-263 package supports >3 W continuous dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 200 mΩ min at −10 V; lower current rating (−23 A DC); TO-220 package only.	Higher conduction loss limits use to <10 A average loads; unsuitable for high-pulse avalanche scenarios.	Select only when legacy TO-220 footprint is mandatory and thermal budget permits higher R_DS(on).
STP12PF06	R_DS(on) = 120 mΩ max at −10 V; higher V_DSS (−60 V same); TO-220AB package; no specified E_AS.	Lacks guaranteed avalanche rating; requires external clamping for inductive loads; lower current handling (−12 A DC).	Use only in non-inductive or low-energy switching where gate drive simplicity outweighs thermal and ruggedness needs.

Compared with IRF9540NPbF and STP12PF06, the 2SJ604-ZJ-E1-AZ offers superior conduction efficiency (30 mΩ vs. ≥120 mΩ), verified avalanche ruggedness (123 mJ), and TO-263 thermal performance - making it preferred for high-reliability industrial solenoid and motor drivers where layout space and thermal management are constrained.

Availability

2SJ604-ZJ-E1-AZ is available at Aetrix Electronics and suitable for industrial automation, transportation equipment, and medical instrumentation requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SJ604-ZJ-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SJ604-ZJ-E1-AZ belongs to Renesas' legacy power MOSFET product line, engineered for rugged DC switching in solenoid, motor, and lamp driver applications where reliability under repetitive inductive stress is critical.

FAQ

What is the maximum continuous drain current rating for the 2SJ604-ZJ-E1-AZ?

The 2SJ604-ZJ-E1-AZ is rated for −45 A DC drain current at case temperature T_C = 25°C. This rating assumes proper PCB copper area for thermal conduction via the exposed drain tab. At elevated case temperatures, current must be derated per the datasheet's power dissipation curve - e.g., ~25 A at T_C = 80°C. Always verify thermal design using R_th(j-c) = 1.79°C/W and actual board layout.

Does the 2SJ604-ZJ-E1-AZ have built-in gate protection?

Yes, the 2SJ604-ZJ-E1-AZ integrates a gate-to-source protection diode to suppress electrostatic discharge (ESD). This internal diode helps prevent gate oxide damage during handling and board assembly but does not replace external transient protection in high-noise industrial environments. The datasheet explicitly notes that additional external protection is required if voltages exceeding ±20 V may appear at the gate terminal.

Can the 2SJ604-ZJ-E1-AZ be used in avalanche mode repeatedly?

No - the 2SJ604-ZJ-E1-AZ is specified for single-pulse avalanche only (IAS = −35 A, EAS = 123 mJ), with strict test conditions: starting channel temperature of 25°C, V_DD = −30 V, R_G = 25 Ω, and gate transition from −20 V to 0 V. Repetitive avalanche operation is not characterized or guaranteed and may cause cumulative degradation. For repetitive inductive switching, ensure proper snubbing or clamp circuits are implemented.

What is the gate threshold voltage range for the 2SJ604-ZJ-E1-AZ?

The gate threshold voltage (V_GS(off)) for the 2SJ604-ZJ-E1-AZ is specified as −1.5 V (min) to −2.5 V (max) at V_DS = −10 V and I_D = −1 mA. This negative threshold confirms its P-channel enhancement-mode behavior. The value shifts slightly with temperature - decreasing (more negative) as channel temperature rises - as shown in the datasheet's characteristic curves.

Is the 2SJ604-ZJ-E1-AZ RoHS compliant?

Yes, the 2SJ604-ZJ-E1-AZ is RoHS compliant. Although the original datasheet predates the EU RoHS Directive's enforcement, Renesas Electronics confirms compliance for all currently manufactured lots, including lead-free terminations and halogen-free molding compounds. Full material declarations and compliance certificates are available upon request from Aetrix Electronics for qualifying orders.

2SJ604-ZJ-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 70W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

2SJ604-ZJ-E1-AZ FAQ

1.How can I place an order for 2SJ604-ZJ-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ604-ZJ-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ604-ZJ-E1-AZ reliable?

The price and inventory of 2SJ604-ZJ-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ604-ZJ-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ604-ZJ-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ604-ZJ-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ604-ZJ-E1-AZ?

2SJ604-ZJ-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ604-ZJ-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ604-ZJ-E1-AZ?

For technical support, including 2SJ604-ZJ-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ604-ZJ-E1-AZ requirements.

6.How does Aetrix verify that 2SJ604-ZJ-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ604-ZJ-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ604-ZJ-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ604-ZJ-E1-AZ?

All 2SJ604-ZJ-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ604-ZJ-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ604-ZJ-E1-AZ part is unused and in its original packaging.

Return procedure for 2SJ604-ZJ-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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