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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ621-T1B-AT

Name: 2SJ621-T1B-AT
Brand: Renesas
SKU: 2SJ621-T1B-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ621-T1B-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-96

Datasheet:: 2SJ621-T1B-AT.pdf

Description:: MOSFET P-CH 12V SC-96 SOT-23

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Product details

Overview

2SJ621-T1B-AT from Renesas Electronics is a P-channel MOSFET designed for low-voltage switching applications, featuring 1.8 V gate drive capability, R_DS(on) as low as 35 mΩ at V_GS = –4.5 V / I_D = –2.0 A, and rated for –12 V drain-source voltage. It is commonly used as a power switch in portable electronics such as battery-powered handheld devices and USB-powered peripherals.

For engineers reviewing the 2SJ621-T1B-AT datasheet, 2SJ621-T1B-AT pinout, 2SJ621-T1B-AT application, or 2SJ621-T1B-AT equivalent, key selection criteria include guaranteed 1.8 V logic-level turn-on, low R_DS(on) across V_GS = –1.8 V to –4.5 V, SC-96 package thermal performance on FR-4, and body diode forward voltage of 0.84 V at 3.5 A.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with integrated gate-source ESD protection diode. Its gate threshold (V_GS(off)) ranges from 0.45 V to 1.5 V, enabling reliable conduction under low-voltage control signals. The device supports pulsed drain currents up to –12 A with ≤1% duty cycle and exhibits C_iss = 630 pF, C_oss = 170 pF, and C_rss = 100 pF at V_DS = –10 V.

Switching behavior is characterized by t_d(on) = 20 ns, t_r = 70 ns, t_d(off) = 320 ns, and t_f = 200 ns under specified test conditions (V_DD = –6.0 V, I_D = –2.0 A, R_G = 10 Ω). Total gate charge is 6.2 nC, with Q_GS = 1.0 nC and Q_GD = 2.0 nC, indicating moderate drive strength requirements for high-frequency operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–12 V - Maximum blocking voltage in off-state; suitable for 3.3 V and 5 V rail switching.
R_DS(on)1	35–44 mΩ @ V_GS = –4.5 V, I_D = –2.0 A - Enables <100 mW conduction loss at 2 A DC load.
I_D(DC)	–3.5 A - Continuous drain current rating at T_A = 25°C on FR-4 board; derates above 25°C ambient.
Q_G	6.2 nC - Total gate charge determines required driver current for 1 MHz+ switching.
V_GS(off)	0.45–1.5 V - Gate threshold range ensures turn-on with 1.8 V logic while avoiding false triggering near 0 V.
V_F(S-D)	0.84 V @ I_F = 3.5 A - Forward voltage of integrated body diode impacts reverse-current path losses in H-bridge or synchronous rectifier use.
C_iss	630 pF - Input capacitance affects gate drive loop stability and rise/fall time consistency.

Pinout & Package

2SJ621-T1B-AT is housed in the SC-96 (Mini Mold Thin Type) surface-mount package, measuring 2.9 × 1.5 × 0.65 mm, optimized for space-constrained portable designs. Thermal resistance is specified for mounting on FR-4 board (50 × 50 × 1.6 mm), supporting 1.25 W total power dissipation under short-duration pulse conditions.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives negative gate-source voltage to turn on; requires ESD protection circuitry external to IC due to internal gate-source diode only.
2 (Source)	Reference node	Connected to higher potential (e.g., V_BAT) in high-side switch configuration; serves as return path for body diode conduction.
3 (Drain)	Load connection	Connects to load ground or low-side return; carries full switched current and must be routed with adequate copper area for thermal management.

Key Features

Feature	Design Value
1.8 V logic-level drive	Guaranteed R_DS(on) ≤ 105 mΩ at V_GS = –1.8 V enables direct interface with low-voltage microcontrollers without level-shifting.
Low R_DS(on) at low V_GS	42–62 mΩ at V_GS = –2.5 V to –3.0 V supports efficient operation in battery-voltage droop scenarios (e.g., 2.5–3.3 V systems).
Integrated gate-source ESD diode	Provides basic Class 1B HBM protection; external TVS or RC snubber still required for system-level surge immunity.
Fast switching with low Q_GD	Q_GD = 2.0 nC limits Miller plateau duration, improving turn-off controllability in high-dV/dt environments.

Applications

Portable Power Switch	USB Port Power Control
Use Scenario: Enabling/disabling power to peripheral modules (e.g., Bluetooth radio, sensor hub) in smartphones and wearables during sleep mode. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by baseband processor GPIO to isolate downstream loads. Use Value: 1.8 V compatibility eliminates need for external level shifter; 35 mΩ R_DS(on) limits voltage drop to <70 mV at 2 A, preserving battery runtime.	Use Scenario: Overcurrent-protected power delivery to USB Type-A ports in portable hubs or docking stations. IC Role / Device Role / Timing Role: Load switch placed between VBUS and port connector, driven by USB controller's enable signal. Use Value: Fast 20 ns turn-on delay and 70 ns rise time support hot-plug response; body diode allows safe reverse-current path during plug insertion.
Li-ion Battery Protection	DC-DC Converter Synchronous Rectifier
Use Scenario: Secondary over-discharge cutoff in single-cell Li-ion packs where main protection IC lacks sufficient drive strength. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET pair with gate driven by protection IC output to block discharge path. Use Value: Low 0.45–1.5 V V_GS(off) ensures clean turn-off at end-of-discharge (~2.5 V cell voltage); SC-96 footprint fits compact battery management PCBs.	Use Scenario: Low-side synchronous rectification in buck converters for portable SSDs or FPGA power rails. IC Role / Device Role / Timing Role: Replaces Schottky diode in freewheeling path, driven by complementary PWM signal with dead-time control. Use Value: 0.84 V V_F(S-D) and 35 mΩ R_DS(on) reduce conduction loss by >40% vs. 0.35 V Schottky at 3 A, improving efficiency at light-to-moderate loads.

Portable Power Switch

USB Port Power Control

Use Scenario: Enabling/disabling power to peripheral modules (e.g., Bluetooth radio, sensor hub) in smartphones and wearables during sleep mode.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by baseband processor GPIO to isolate downstream loads.

Use Value: 1.8 V compatibility eliminates need for external level shifter; 35 mΩ R_DS(on) limits voltage drop to <70 mV at 2 A, preserving battery runtime.

Use Scenario: Overcurrent-protected power delivery to USB Type-A ports in portable hubs or docking stations.

IC Role / Device Role / Timing Role: Load switch placed between VBUS and port connector, driven by USB controller's enable signal.

Use Value: Fast 20 ns turn-on delay and 70 ns rise time support hot-plug response; body diode allows safe reverse-current path during plug insertion.

Li-ion Battery Protection

DC-DC Converter Synchronous Rectifier

Use Scenario: Secondary over-discharge cutoff in single-cell Li-ion packs where main protection IC lacks sufficient drive strength.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET pair with gate driven by protection IC output to block discharge path.

Use Value: Low 0.45–1.5 V V_GS(off) ensures clean turn-off at end-of-discharge (~2.5 V cell voltage); SC-96 footprint fits compact battery management PCBs.

Use Scenario: Low-side synchronous rectification in buck converters for portable SSDs or FPGA power rails.

IC Role / Device Role / Timing Role: Replaces Schottky diode in freewheeling path, driven by complementary PWM signal with dead-time control.

Use Value: 0.84 V V_F(S-D) and 35 mΩ R_DS(on) reduce conduction loss by >40% vs. 0.35 V Schottky at 3 A, improving efficiency at light-to-moderate loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-BE3	R_DS(on) = 90 mΩ @ V_GS = –2.5 V; V_DSS = –20 V; SC-70 package (smaller, lower power handling)	Higher R_DS(on) increases conduction loss; wider V_DSS margin suits 12 V systems but unnecessary for 3.3 V rails	Select when board space is critical and 2 A max load permits higher on-resistance.
AO3401	R_DS(on) = 44 mΩ @ V_GS = –2.5 V; V_DSS = –30 V; SOT-23 package; Q_G = 5.5 nC	Higher voltage rating and slightly lower gate charge improve switching efficiency in 5–12 V systems but increase cost and footprint	Prefer for designs requiring broader supply voltage tolerance or faster switching than 2SJ621-T1B-AT supports.

Compared with Si2301DDS-T1-BE3 and AO3401, the 2SJ621-T1B-AT offers the lowest R_DS(on) at 1.8 V drive and optimal thermal performance per unit area in SC-96, making it uniquely suited for space- and efficiency-critical 1.8–3.3 V portable power switches where gate drive voltage headroom is minimal.

Availability

2SJ621-T1B-AT is available at Aetrix Electronics and suitable for portable power switches, USB port controllers, battery protection circuits, and synchronous rectifiers requiring stable component supply and long-term industrial availability.

Supply support for 2SJ621-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for automotive, industrial, and consumer markets.

The 2SJ621-T1B-AT belongs to Renesas' legacy low-voltage logic-level P-channel MOSFET product line, engineered specifically for compact, battery-operated equipment requiring robust 1.8 V gate drive and low on-resistance in ultra-thin packages.

FAQ

What is the maximum continuous drain current rating for the 2SJ621-T1B-AT?

The 2SJ621-T1B-AT has a continuous drain current (I_D(DC)) rating of –3.5 A at T_A = 25°C when mounted on an FR-4 board (50 × 50 × 1.6 mm). This rating decreases with rising ambient temperature and must be derated per the datasheet's PT vs. T_A curve; at 70°C ambient, usable I_D(DC) drops to approximately –2.2 A. Always verify thermal design margins using the provided transient thermal resistance data.

Does the 2SJ621-T1B-AT support true 1.8 V gate drive in production systems?

Yes - the 2SJ621-T1B-AT is explicitly characterized for 1.8 V operation: R_DS(on)4 = 63–105 mΩ is guaranteed at V_GS = –1.8 V and I_D = –1.5 A. This makes the 2SJ621-T1B-AT suitable for direct interface with 1.8 V GPIOs without level translation, unlike many P-MOSFETs requiring ≥2.5 V for reliable turn-on.

What is the role of the internal gate-source diode in the 2SJ621-T1B-AT?

The internal gate-source diode in the 2SJ621-T1B-AT provides basic ESD protection (HBM Class 1B), clamping transient voltages during handling. However, Renesas explicitly states that "an additional protection circuit is externally required" if overvoltage may occur in-system. Therefore, the 2SJ621-T1B-AT must be used with external Zener or TVS diodes in real-world applications - the internal diode alone is insufficient for robust system-level ESD immunity.

Can the 2SJ621-T1B-AT be used in synchronous rectification topologies?

Yes - the 2SJ621-T1B-AT is suitable for low-side synchronous rectification in buck converters operating from 3.3 V or 5 V input rails. Its 0.84 V body diode forward voltage and 35 mΩ R_DS(on) at –4.5 V gate drive reduce conduction losses versus Schottky diodes. Ensure gate drive timing avoids shoot-through, and account for its 320 ns turn-off delay in dead-time calculation for the 2SJ621-T1B-AT.

Is the 2SJ621-T1B-AT RoHS compliant and lead-free?

Yes - the 2SJ621-T1B-AT is manufactured and qualified to meet EU RoHS Directive requirements. Renesas confirms environmental compliance in its official documentation, and the "-T1B-AT" suffix denotes tape-and-reel packaging compatible with lead-free reflow processes (peak temperature ≤ 260°C). Always verify latest compliance status via Renesas' Product Change Notification (PCN) database before high-volume design-in.

2SJ621-T1B-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-96

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 44mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 6.2 nC @ 4 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 630 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-96-3, Thin Mini Mold

2SJ621-T1B-AT FAQ

1.How can I place an order for 2SJ621-T1B-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ621-T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ621-T1B-AT reliable?

The price and inventory of 2SJ621-T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ621-T1B-AT is usually 5 days.

3.What payment methods are accepted for 2SJ621-T1B-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ621-T1B-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ621-T1B-AT?

2SJ621-T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ621-T1B-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ621-T1B-AT?

For technical support, including 2SJ621-T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ621-T1B-AT requirements.

6.How does Aetrix verify that 2SJ621-T1B-AT is sourced from the original manufacturer or authorized distributors?

All 2SJ621-T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ621-T1B-AT meets industry standards.

7.What is the process for return or replacement of 2SJ621-T1B-AT?

All 2SJ621-T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ621-T1B-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ621-T1B-AT part is unused and in its original packaging.

Return procedure for 2SJ621-T1B-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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