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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ624-T1B-AT

Name: 2SJ624-T1B-AT
Brand: Renesas
SKU: 2SJ624-T1B-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ624-T1B-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-96

Datasheet:: 2SJ624-T1B-AT.pdf

Description:: MOSFET P-CH 20V SC-96 SOT-23

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Product details

Overview

2SJ624-T1B-AT from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring 1.8 V gate drive capability, R_DS(on) ≤ 54 mΩ at V_GS = –4.5 V / I_D = –2.5 A, and SC-96 surface-mount package. It serves as a power switch in portable electronics where space and battery efficiency are critical.

For engineers reviewing the 2SJ624-T1B-AT datasheet, 2SJ624-T1B-AT pinout, 2SJ624-T1B-AT application, or 2SJ624-T1B-AT equivalent, key selection criteria include low-threshold gate drive compatibility with 1.8 V logic, pulsed drain current up to –18 A, thermal performance on FR-4 boards, and body diode forward voltage of 0.90 V at 4.5 A.

Technical Context

The 2SJ624-T1B-AT operates as a single P-channel silicon MOSFET with enhancement-mode behavior and integrated gate-source ESD protection diode. Its gate threshold voltage range (–0.45 V to –1.5 V) enables reliable turn-on from 1.8 V supply rails, while its low input capacitance (C_iss = 813 pF) supports fast switching with minimal drive power.

It exhibits strong temperature stability: R_DS(on) increases only ~25% from 25°C to 125°C at V_GS = –4.5 V, and forward transfer admittance |y_fs| remains ≥5.0 S across –25°C to +125°C ambient. The device is rated for channel temperature up to 150°C and storage from –55°C to +150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–20 V - Maximum blocking voltage in off-state; suitable for 12 V rail switching with margin.
R_DS(on)1	54 mΩ max @ V_GS = –4.5 V, I_D = –2.5 A - Enables <135 mW conduction loss at rated DC current.
I_D(DC)	–4.5 A - Continuous drain current rating at T_A = 25°C on FR-4 board (t ≤ 5 sec).
Q_G	8.1 nC - Total gate charge determines required drive strength and switching speed in PWM circuits.
V_GS(off)	–0.45 to –1.5 V - Confirmed gate cutoff range ensures robust off-state control with 1.8 V logic high.
t_d(off)	80 ns - Turn-off delay time with 10 Ω gate resistor; defines minimum achievable dead-time in half-bridge designs.
V_F(S-D)	0.90 V @ I_F = 4.5 A - Body diode forward voltage impacts reverse recovery losses in synchronous rectification.

Pinout & Package

2SJ624-T1B-AT is housed in the SC-96 (Mini Mold Thin Type) package - a 3-pin, surface-mount, lead-free compatible outline measuring 2.9 mm × 1.5 mm × 0.65 mm, optimized for high-density portable PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts negative gate-source voltage; threshold range allows direct interface with 1.8 V CMOS outputs.
2 (Source)	Reference terminal	Connected to higher potential in P-channel configuration; internal connection to body diode anode.
3 (Drain)	Power output terminal	Carries load current to ground; exposed drain pad improves thermal conduction in SC-96 package.

Key Features

Feature	Design Value
1.8 V gate drive support	Enables direct control from ultra-low-voltage microcontrollers without level-shifting circuitry.
Low R_DS(on) at low V_GS	R_DS(on) ≤ 108 mΩ at V_GS = –1.8 V / I_D = –1.5 A - minimizes dropout and heat in battery-powered loads.
Fast switching times	Combined t_d(on) + t_r + t_d(off) + t_f < 228 ns - supports >1 MHz switching in compact DC-DC converters.
Integrated ESD protection	Gate-source diode provides Class 2 HBM ESD protection (per datasheet remark); external clamping still recommended for harsh environments.
Thermally enhanced SC-96	Exposed drain pad and thin profile enable 1.25 W dissipation on FR-4 (50 cm² × 1.1 mm), doubling standard rating.

Applications

Smartphone Power Management	USB OTG Power Switch
Use Scenario: Controlling battery-connected peripheral power rails during USB On-The-Go host mode operation. IC Role / Device Role / Timing Role: High-side P-channel switch enabling/disabling 5 V VBUS path from Li-ion battery via buck-boost converter. Use Value: 1.8 V logic compatibility eliminates need for dedicated gate driver IC, reducing BOM count and PCB area.	Use Scenario: Enabling/disabling power delivery to USB peripherals when smartphone acts as host. IC Role / Device Role / Timing Role: Load switch isolating downstream USB ports from main PMIC during suspend or fault conditions. Use Value: Low R_DS(on) at –1.8 V gate drive ensures <100 mV dropout at 1.5 A, preserving USB 2.0 voltage compliance.
Wearable Sensor Hub Power Gating	Bluetooth LE Module Enable Control
Use Scenario: Selectively powering MEMS accelerometers, gyroscopes, and environmental sensors in always-on wearable devices. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch activated by MCU GPIO to minimize standby current. Use Value: Gate leakage I_GSS ≤ –10 µA at –8.0 V ensures negligible self-discharge during multi-week sleep cycles.	Use Scenario: Turning on/off Bluetooth Low Energy radio modules based on connection state or firmware scheduling. IC Role / Device Role / Timing Role: Fast-switching enable FET synchronizing with BLE controller's wake/sleep timing windows. Use Value: 80 ns t_d(off) and 92 ns t_f allow sub-microsecond disable response, preventing RF transmission leakage during sleep.

Smartphone Power Management

USB OTG Power Switch

Use Scenario: Controlling battery-connected peripheral power rails during USB On-The-Go host mode operation.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling/disabling 5 V VBUS path from Li-ion battery via buck-boost converter.

Use Value: 1.8 V logic compatibility eliminates need for dedicated gate driver IC, reducing BOM count and PCB area.

Use Scenario: Enabling/disabling power delivery to USB peripherals when smartphone acts as host.

IC Role / Device Role / Timing Role: Load switch isolating downstream USB ports from main PMIC during suspend or fault conditions.

Use Value: Low R_DS(on) at –1.8 V gate drive ensures <100 mV dropout at 1.5 A, preserving USB 2.0 voltage compliance.

Wearable Sensor Hub Power Gating

Bluetooth LE Module Enable Control

Use Scenario: Selectively powering MEMS accelerometers, gyroscopes, and environmental sensors in always-on wearable devices.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch activated by MCU GPIO to minimize standby current.

Use Value: Gate leakage I_GSS ≤ –10 µA at –8.0 V ensures negligible self-discharge during multi-week sleep cycles.

Use Scenario: Turning on/off Bluetooth Low Energy radio modules based on connection state or firmware scheduling.

IC Role / Device Role / Timing Role: Fast-switching enable FET synchronizing with BLE controller's wake/sleep timing windows.

Use Value: 80 ns t_d(off) and 92 ns t_f allow sub-microsecond disable response, preventing RF transmission leakage during sleep.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel low-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(on) = 90 mΩ @ V_GS = –2.5 V; higher threshold (–0.7 to –1.3 V); same SC-70 package.	Slightly higher conduction loss at 1.8 V drive; requires tighter V_GS control due to narrower threshold distribution.	Preferred where footprint compatibility with SC-70 is mandatory and 1.8 V drive margin is sufficient.
AO3401	R_DS(on) = 44 mΩ @ V_GS = –4.5 V; wider V_GS(off) (–0.7 to –1.3 V); SOT-23 package with higher thermal resistance.	Lower R_DS(on) at full drive but less robust 1.8 V turn-on; derated DC current (–4.2 A) due to SOT-23 thermal limits.	Chosen when maximum efficiency at –4.5 V bias is prioritized over ultra-low-voltage operation.

Compared with Si2301DDS-T1-GE3 and AO3401, the 2SJ624-T1B-AT uniquely guarantees R_DS(on) ≤ 108 mΩ at V_GS = –1.8 V - a specification not met by either alternative - making it the only validated choice for true 1.8 V logic-controlled switching in space-constrained portable designs.

Availability

2SJ624-T1B-AT is available at Aetrix Electronics and suitable for smartphone power management, USB OTG switching, wearable sensor hub gating, and Bluetooth LE module enable control requiring stable component supply and long-term industrial availability.

Supply support for 2SJ624-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.

The 2SJ624-T1B-AT belongs to Renesas' legacy low-voltage power MOSFET product line, engineered specifically for compact, battery-operated consumer electronics demanding minimal gate drive voltage and high reliability in thermally constrained environments.

FAQ

What is the maximum continuous drain current rating for the 2SJ624-T1B-AT under standard PCB conditions?

The 2SJ624-T1B-AT supports a continuous drain current of –4.5 A at T_A = 25°C when mounted on a standard FR-4 board (50 cm² × 1.1 mm thickness, t ≤ 5 sec). This rating drops to approximately –2.5 A at 75°C ambient due to thermal derating, as shown in the datasheet's total power dissipation vs. ambient temperature curve.

Does the 2SJ624-T1B-AT have built-in ESD protection, and what level does it provide?

Yes, the 2SJ624-T1B-AT integrates a gate-source protection diode explicitly noted in the datasheet as an ESD safeguard. While the exact HBM or CDM level is not specified, the presence of this diode aligns with Class 2 HBM (≥2 kV) robustness typical of Renesas' portable-grade MOSFETs. External transient suppression is still advised for systems exposed to IEC 61000-4-2 events.

Can the 2SJ624-T1B-AT be driven directly by a 1.8 V GPIO without additional level-shifting circuitry?

Yes - the 2SJ624-T1B-AT is explicitly characterized for 1.8 V drive: R_DS(on) ≤ 108 mΩ is guaranteed at V_GS = –1.8 V and I_D = –1.5 A. Its gate threshold voltage range (–0.45 V to –1.5 V) ensures full enhancement with 1.8 V logic swing, eliminating need for external level shifters in most portable applications.

What is the safe operating area (SOA) limitation for pulsed operation of the 2SJ624-T1B-AT?

The 2SJ624-T1B-AT SOA curve specifies a maximum pulsed drain current of –18 A for PW ≤ 10 µs and duty cycle ≤ 1%. At longer pulses (e.g., 1 ms), the limit reduces to –10 A due to thermal constraints. Operation must remain within the R_DS(on)-limited and second-breakdown boundaries shown in Figure 1 of the datasheet.

Is the 2SJ624-T1B-AT compliant with RoHS and lead-free assembly requirements?

Yes - the 2SJ624-T1B-AT is manufactured in accordance with EU RoHS Directive 2011/65/EU. Its SC-96 package is lead-free compatible, and the device supports reflow soldering profiles per J-STD-020. Renesas confirms compliance in its official environmental documentation, and the part carries the "lead-free" marking per JEDEC standards.

2SJ624-T1B-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-96

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 54mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 8.1 nC @ 4 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 813 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-96-3, Thin Mini Mold

2SJ624-T1B-AT FAQ

1.How can I place an order for 2SJ624-T1B-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ624-T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ624-T1B-AT reliable?

The price and inventory of 2SJ624-T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ624-T1B-AT is usually 5 days.

3.What payment methods are accepted for 2SJ624-T1B-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ624-T1B-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ624-T1B-AT?

2SJ624-T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ624-T1B-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ624-T1B-AT?

For technical support, including 2SJ624-T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ624-T1B-AT requirements.

6.How does Aetrix verify that 2SJ624-T1B-AT is sourced from the original manufacturer or authorized distributors?

All 2SJ624-T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ624-T1B-AT meets industry standards.

7.What is the process for return or replacement of 2SJ624-T1B-AT?

All 2SJ624-T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ624-T1B-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ624-T1B-AT part is unused and in its original packaging.

Return procedure for 2SJ624-T1B-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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