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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ649-AZ

Name: 2SJ649-AZ
Brand: Renesas
SKU: 2SJ649-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ649-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3 Isolated Tab

Datasheet:: 2SJ649-AZ.pdf

Description:: MOSFET P-CH 60V 20A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:3,137

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Product details

Overview

2SJ649-AZ from Renesas Electronics is a P-channel power MOSFET designed for solenoid, motor, and lamp driver applications. It features R_DS(on)1 = 48 mΩ max at V_GS = –10 V and I_D = –10 A, V_DSS = –60 V, and built-in gate protection diode. Its isolated TO-220 package supports high-current switching in industrial control circuits.

For engineers reviewing the 2SJ649-AZ datasheet, 2SJ649-AZ pinout, 2SJ649-AZ application, or 2SJ649-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 40 mJ), low gate charge (Q_G = 38 nC), and dual-threshold on-resistance performance across –4 V and –10 V drive conditions.

Technical Context

The 2SJ649-AZ operates as a high-side switch in DC load control systems, leveraging its negative gate threshold (V_GS(off) = –1.5 to –2.5 V) and robust avalanche capability. Its body diode enables freewheeling in inductive loads, with t_rr = 49 ns and Q_rr = 100 nC supporting fast turn-off in relay and solenoid drivers.

Thermal design relies on R_th(ch–C) = 5.0 °C/W and R_th(ch–A) = 62.5 °C/W, with derating starting at T_C > 25°C. The device sustains I_D(pulse) = –70 A (PW ≤ 10 µs, duty ≤ 1%) and handles single-pulse avalanche stress up to I_AS = –20 A at V_DD = –30 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–60 V - Maximum drain-source blocking voltage for 24 V/48 V industrial bus applications
R_DS(on)1	48 mΩ max at V_GS = –10 V, I_D = –10 A - Enables <1 W conduction loss at rated current
R_DS(on)2	75 mΩ max at V_GS = –4.0 V, I_D = –10 A - Supports logic-level gate drive from microcontrollers
E_AS	40 mJ - Withstands single-pulse inductive energy without failure in solenoid snubberless designs
Q_G	38 nC - Low gate charge reduces driver power and enables 10 ns turn-on delay in high-speed switching
t_rr	49 ns - Fast reverse recovery minimizes cross-conduction loss in half-bridge configurations
I_D(DC)	–20 A at T_C = 25°C - Continuous current rating suitable for 12–24 V DC motor H-bridge legs

Pinout & Package

2SJ649-AZ uses an isolated TO-220 (MP-45F) package with creepage/clearance isolation between drain and source terminals. Mounting tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control terminal requiring <38 nC charge for full enhancement; protected by internal ESD diode to source
2 (Center)	Drain	High-side power input node; electrically tied to mounting tab; requires isolation from heatsink ground
3 (Right)	Source	Power return path and reference for gate drive; body diode anode connects here for freewheeling

Key Features

Feature	Design Value
Low R_DS(on) at –4 V gate drive	75 mΩ max enables direct interface with 5 V or 3.3 V MCU GPIO without level-shifting
Built-in gate protection diode	ESD protection between gate and source eliminates need for external Zener clamping in basic layouts
High avalanche energy rating	40 mJ single-pulse rating allows elimination of external snubbers in 24 V solenoid drivers
Low output capacitance	C_oss = 350 pF minimizes switching loss during hard-commutation in relay control
Fast reverse recovery	49 ns t_rr supports PWM frequencies up to 100 kHz in lamp dimming applications

Applications

Industrial Solenoid Control	DC Motor Direction Switching
Use Scenario: Driving 24 V DC solenoids in pneumatic valve manifolds with inductive kickback up to 100 V. IC Role / Device Role / Timing Role: High-side P-channel switch handling peak currents up to –70 A during turn-off transients. Use Value: Built-in 40 mJ avalanche capability absorbs energy without external clamp, reducing BOM count by one TVS diode.	Use Scenario: Reversing polarity of 12 V brushed DC motors in automated conveyor systems. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge configuration, paired with N-channel low-side devices. Use Value: 75 mΩ R_DS(on) at –4 V gate drive enables direct control from PLC output modules with 5 V open-collector outputs.
Lamp Load Switching	Power Supply OR-ing
Use Scenario: Switching 12 V halogen lamps in building automation panels with hot-swap requirements. IC Role / Device Role / Timing Role: Inrush-limited load switch using gate resistor control and body diode freewheeling. Use Value: 49 ns reverse recovery time prevents flicker and contact arcing during rapid on/off cycling.	Use Scenario: OR-ing two redundant 24 V DC power supplies in industrial control cabinets. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing reverse-current blocking and low-loss conduction. Use Value: Isolated TO-220 package allows safe floating of source terminal while maintaining thermal coupling to shared heatsink.

Industrial Solenoid Control

DC Motor Direction Switching

Use Scenario: Driving 24 V DC solenoids in pneumatic valve manifolds with inductive kickback up to 100 V.

IC Role / Device Role / Timing Role: High-side P-channel switch handling peak currents up to –70 A during turn-off transients.

Use Value: Built-in 40 mJ avalanche capability absorbs energy without external clamp, reducing BOM count by one TVS diode.

Use Scenario: Reversing polarity of 12 V brushed DC motors in automated conveyor systems.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge configuration, paired with N-channel low-side devices.

Use Value: 75 mΩ R_DS(on) at –4 V gate drive enables direct control from PLC output modules with 5 V open-collector outputs.

Lamp Load Switching

Power Supply OR-ing

Use Scenario: Switching 12 V halogen lamps in building automation panels with hot-swap requirements.

IC Role / Device Role / Timing Role: Inrush-limited load switch using gate resistor control and body diode freewheeling.

Use Value: 49 ns reverse recovery time prevents flicker and contact arcing during rapid on/off cycling.

Use Scenario: OR-ing two redundant 24 V DC power supplies in industrial control cabinets.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing reverse-current blocking and low-loss conduction.

Use Value: Isolated TO-220 package allows safe floating of source terminal while maintaining thermal coupling to shared heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP10P60P	V_DSS = –60 V, R_DS(on) = 120 mΩ @ –10 V, no built-in gate protection diode	Higher R_DS(on) increases conduction loss; external gate protection required	Choose when higher avalanche rating (E_AS = 120 mJ) is prioritized over gate drive simplicity
IRF9540NPBF	V_DSS = –100 V, R_DS(on) = 200 mΩ @ –10 V, TO-220 non-isolated package	Lower current density and no isolation require redesign of heatsink mounting	Choose only if –100 V blocking is mandatory and board layout permits non-isolated drain connection

Compared with IXTP10P60P and IRF9540NPBF, the 2SJ649-AZ delivers lower on-resistance at both –4 V and –10 V drive, integrated gate protection, and isolation-making it optimal for space-constrained industrial controls where reliability under inductive stress and simplified layout are critical.

Availability

2SJ649-AZ is available at Aetrix Electronics and suitable for industrial solenoid control, DC motor direction switching, and lamp load switching requiring stable component supply and long-term lifecycle support.

Supply support for 2SJ649-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The 2SJ649-AZ belongs to Renesas' legacy power MOSFET product line targeting ruggedized DC load switching in factory automation and building control systems.

FAQ

What is the maximum continuous drain current rating for the 2SJ649-AZ at case temperature 25°C?

The 2SJ649-AZ has a maximum continuous drain current I_D(DC) of –20 A when mounted on a heatsink at T_C = 25°C. This rating assumes proper thermal management via the isolated TO-220 package and is reduced per the derating curve above 25°C. At ambient temperature, the usable current drops to 2.0 A due to lower thermal efficiency.

Does the 2SJ649-AZ include integrated gate protection, and how does it affect circuit design?

Yes, the 2SJ649-AZ integrates a gate-to-source protection diode to suppress ESD events. This eliminates the need for an external Zener clamp in most standard industrial applications. However, Renesas explicitly states that additional external protection remains necessary if voltages exceeding ±20 V may appear at the gate-so designs with noisy gate drive lines or long PCB traces should retain a 15 V Zener.

Can the 2SJ649-AZ be used in avalanche mode, and what are the validated limits?

Yes, the 2SJ649-AZ is characterized for single-pulse avalanche operation with I_AS = –20 A and E_AS = 40 mJ under specified test conditions (V_DD = –30 V, R_G = 25 Ω, starting T_ch = 25°C). These values are measured-not calculated-and apply only to non-repetitive events. Repetitive avalanche is not rated and must be avoided in production designs.

What is the gate threshold voltage range for the 2SJ649-AZ, and how does it impact logic-level compatibility?

The 2SJ649-AZ has a gate threshold voltage V_GS(off) ranging from –1.5 V to –2.5 V (measured at V_DS = –10 V, I_D = –1 mA). This ensures reliable turn-on with 3.3 V or 5 V logic signals when combined with its low R_DS(on)2 of 75 mΩ at V_GS = –4.0 V, making it compatible with standard microcontroller GPIO without level shifters.

Is the 2SJ649-AZ RoHS compliant, and what quality grade is assigned to this part?

The 2SJ649-AZ is RoHS compliant per Renesas' environmental policy and falls under the "Standard" quality grade, meaning it is qualified for use in computers, office equipment, industrial robots, and similar commercial/industrial applications-but not for automotive, medical life-support, or aerospace systems unless separately qualified.

2SJ649-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3 Isolated Tab

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 48mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Isolated Tab

2SJ649-AZ FAQ

1.How can I place an order for 2SJ649-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ649-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ649-AZ reliable?

The price and inventory of 2SJ649-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ649-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ649-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ649-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ649-AZ?

2SJ649-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ649-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ649-AZ?

For technical support, including 2SJ649-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ649-AZ requirements.

6.How does Aetrix verify that 2SJ649-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ649-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ649-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ649-AZ?

All 2SJ649-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ649-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ649-AZ part is unused and in its original packaging.

Return procedure for 2SJ649-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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