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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ673-AZ

Name: 2SJ673-AZ
Brand: Renesas
SKU: 2SJ673-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ673-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3 Isolated Tab

Datasheet:: 2SJ673-AZ.pdf

Description:: MOSFET P-CH 60V 36A TO220

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Product details

Overview

2SJ673-AZ from Renesas Electronics is a P-channel power MOSFET designed for high-current DC switching in industrial and power conversion systems, featuring R_DS(on) = 20 mΩ max at V_GS = −10 V / I_D = −18 A, −60 V V_DSS, and 32 W total power dissipation at T_C = 25°C. It integrates a built-in gate protection diode and supports robust avalanche energy handling (E_AS = 130 mJ).

For engineers reviewing the 2SJ673-AZ datasheet, 2SJ673-AZ pinout, 2SJ673-AZ application, or 2SJ673-AZ equivalent, this page delivers verified electrical parameters, TO-220 isolated package layout, switching timing data (t_d(off) = 130 ns), body diode recovery specs (t_rr = 52 ns), and real-world alternative part guidance for high-side switch and motor control designs.

Technical Context

The 2SJ673-AZ employs a vertical trench-gate structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(off) = −1.5 to −2.5 V) enables reliable turn-on with standard logic-level drive, while its C_iss = 4600 pF (typ.) and Q_G = 87 nC support efficient gate driving at moderate frequencies up to ~100 kHz.

Designed for high-side configuration in buck converters, half-bridge inverters, and DC motor H-bridges, it leverages an isolated TO-220 package (MP-45F) where the drain tab is electrically isolated from the mounting surface-critical for floating gate drive and thermal management in multi-FET layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−60 V - Supports 48 V bus systems with 20% derating margin against transients.
R_DS(on)1	20 mΩ max @ V_GS = −10 V / I_D = −18 A - Enables ≤0.65 W conduction loss at full rated current.
I_D(DC)	−36 A @ T_C = 25°C - Sustains continuous load current in heatsink-mounted industrial power stages.
E_AS	130 mJ - Withstands single inductive turn-off events (e.g., relay coil or motor winding) without failure.
t_r/t_f	14 ns / 50 ns - Enables clean edge transitions in PWM-driven switching with minimal overlap loss.
V_F(S-D)	1.0 V @ I_F = −36 A - Low forward drop reduces body diode conduction loss during dead-time commutation.
Q_GD	22 nC @ I_D = −36 A - Gate-to-drain charge governs Miller plateau duration; critical for snubberless half-bridge design.

Pinout & Package

2SJ673-AZ uses the Isolated TO-220 (MP-45F) package: metal tab (drain) is electrically isolated from leads; case temperature rating assumes heatsink contact to drain tab. Mounting screw hole (φ2.7 mm) enables secure mechanical attachment with thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	High-impedance MOS control input; requires external gate resistor (RG) to damp ringing and limit peak current during switching.
2 (Center)	Drain	Main high-side current path; electrically isolated tab allows direct heatsinking without insulation pad in floating configurations.
3 (Right)	Source	Reference node for gate drive; connects to load return or upper rail in high-side switch topology.

Key Features

Feature	Design Value
Super low R_DS(on)	20 mΩ max at −10 V gate drive enables <0.7 W conduction loss at −18 A, reducing thermal stress in compact power modules.
Built-in gate protection diode	ESD-rated diode between gate and source suppresses ±20 V transient spikes-reduces need for external TVS in cost-sensitive industrial controls.
Low C_iss	4600 pF typical minimizes gate drive power requirement and improves efficiency in 20–100 kHz switching applications.
Avalanche-rated	Rated for single-pulse I_AS = −36 A and E_AS = 130 mJ-supports unclamped inductive switching without external snubbers in relay drivers.

Applications

DC Motor Control	Industrial Power Supply
Use Scenario: Bidirectional H-bridge driver for 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side P-channel switch enabling simplified gate drive (no bootstrap needed) and fast reverse-recovery-limited freewheeling via integrated body diode. Use Value: R_DS(on) ≤ 20 mΩ limits I²R heating at 20 A stall current; t_rr = 52 ns ensures minimal shoot-through risk during direction reversal.	Use Scenario: Synchronous rectification or high-side switch in 48 V input telecom/industrial SMPS with >10 A output. IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck or buck-boost converter operating at 50–100 kHz. Use Value: Q_G = 87 nC and C_iss = 4600 pF allow efficient drive with low-power gate drivers; 32 W P_T supports forced-air-cooled 150 W designs.
Relay Replacement	Overvoltage Protection Switch
Use Scenario: Solid-state replacement for electromechanical relays controlling 36 V DC solenoids or valves in building HVAC systems. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via avalanche mode during turn-off. Use Value: E_AS = 130 mJ exceeds typical solenoid energy (≤80 mJ), eliminating need for external flyback diodes or RC snubbers.	Use Scenario: Reverse-polarity and overvoltage protection circuit upstream of sensitive 24 V PLC I/O modules. IC Role / Device Role / Timing Role: P-channel high-side pass transistor controlled by dedicated protection IC (e.g., TPS2660). Use Value: V_DSS = −60 V provides 100% margin over 24 V nominal + 30 V surge; R_DS(on) ≤ 20 mΩ adds <500 mW loss at 10 A fault current.

DC Motor Control

Industrial Power Supply

Use Scenario: Bidirectional H-bridge driver for 24–48 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling simplified gate drive (no bootstrap needed) and fast reverse-recovery-limited freewheeling via integrated body diode.

Use Value: R_DS(on) ≤ 20 mΩ limits I²R heating at 20 A stall current; t_rr = 52 ns ensures minimal shoot-through risk during direction reversal.

Use Scenario: Synchronous rectification or high-side switch in 48 V input telecom/industrial SMPS with >10 A output.

IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck or buck-boost converter operating at 50–100 kHz.

Use Value: Q_G = 87 nC and C_iss = 4600 pF allow efficient drive with low-power gate drivers; 32 W P_T supports forced-air-cooled 150 W designs.

Relay Replacement

Overvoltage Protection Switch

Use Scenario: Solid-state replacement for electromechanical relays controlling 36 V DC solenoids or valves in building HVAC systems.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via avalanche mode during turn-off.

Use Value: E_AS = 130 mJ exceeds typical solenoid energy (≤80 mJ), eliminating need for external flyback diodes or RC snubbers.

Use Scenario: Reverse-polarity and overvoltage protection circuit upstream of sensitive 24 V PLC I/O modules.

IC Role / Device Role / Timing Role: P-channel high-side pass transistor controlled by dedicated protection IC (e.g., TPS2660).

Use Value: V_DSS = −60 V provides 100% margin over 24 V nominal + 30 V surge; R_DS(on) ≤ 20 mΩ adds <500 mW loss at 10 A fault current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP10P60P	V_DSS = −60 V, R_DS(on) = 220 mΩ @ −10 V - 11× higher on-resistance; lower Q_G (32 nC).	Suitable only for <2 A loads; not viable for 18–36 A 2SJ673-AZ use cases.	Select only when ultra-low gate charge dominates over conduction loss in low-current, high-frequency apps.
IRF9540NPBF	V_DSS = −100 V, R_DS(on) = 200 mΩ @ −10 V - wider voltage margin but 10× higher R_DS(on).	Acceptable for 5–10 A backup supplies; cannot replace 2SJ673-AZ in 18+ A motor drives without thermal redesign.	Choose only if −100 V rating is mandatory and load current is ≤8 A with adequate heatsinking.

Compared with IXTP10P60P and IRF9540NPBF, the 2SJ673-AZ delivers uniquely low R_DS(on) in the −60 V class-enabling 18–36 A operation without paralleling, while maintaining manageable Q_G and avalanche ruggedness essential for industrial reliability.

Availability

2SJ673-AZ is available at Aetrix Electronics and suitable for industrial motor control, telecom power supply, and solid-state relay replacement requiring stable component supply and long-term lifecycle assurance.

Supply support for 2SJ673-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The 2SJ673-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-current, high-reliability industrial switching-prioritizing low R_DS(on), avalanche tolerance, and isolated packaging for ease of thermal and electrical integration.

FAQ

What is the maximum continuous drain current rating for the 2SJ673-AZ at 75°C case temperature?

The 2SJ673-AZ supports I_D(DC) = −36 A at T_C = 25°C, derating linearly to approximately −24 A at T_C = 75°C per the datasheet's total power dissipation curve. This reflects thermal limitation-not device degradation-and assumes proper heatsinking per the R_th(ch-C) = 3.9°C/W specification. Always verify junction temperature using T_j = T_C + (P_tot × R_th(ch-C)) in final layout.

Does the 2SJ673-AZ require an external gate resistor, and what value is recommended?

Yes, the 2SJ673-AZ requires an external gate resistor to control dV/dt, suppress oscillation, and limit peak gate current. For typical 50–100 kHz switching with a ±15 V gate driver, a 10–22 Ω resistor is recommended-verified in the datasheet's test circuit for t_d(off) and E_AS characterization. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.

Can the 2SJ673-AZ be used in parallel with identical units for higher current handling?

Yes, the 2SJ673-AZ supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as temperature rises. However, matched gate drive layout (equal trace length/impedance), individual gate resistors, and symmetrical thermal mounting are mandatory. Derate total current by ≥15% versus sum of individual ratings to account for parameter spread and thermal coupling.

Is the body diode in the 2SJ673-AZ suitable for continuous freewheeling conduction?

The body diode of the 2SJ673-AZ has V_F(S-D) = 1.0 V at −36 A and t_rr = 52 ns, making it usable for short-duration freewheeling (e.g., dead-time commutation). However, it is not rated for continuous forward conduction above 10 A without significant self-heating. For sustained reverse-current paths, an external Schottky or SiC diode is strongly advised to avoid thermal runaway.

What is the isolation voltage rating between the drain tab and leads in the 2SJ673-AZ TO-220 package?

The 2SJ673-AZ's Isolated TO-220 (MP-45F) package provides 2500 V_RMS isolation between the drain tab and all leads, as confirmed by Renesas' package qualification testing. This enables safe use in floating high-side configurations without insulating pads-provided creepage/clearance on PCB meets IEC 61000-4-5 requirements for the target system voltage class.

2SJ673-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3 Isolated Tab

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 32W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Isolated Tab

2SJ673-AZ FAQ

1.How can I place an order for 2SJ673-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ673-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ673-AZ reliable?

The price and inventory of 2SJ673-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ673-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ673-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ673-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ673-AZ?

2SJ673-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ673-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ673-AZ?

For technical support, including 2SJ673-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ673-AZ requirements.

6.How does Aetrix verify that 2SJ673-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ673-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ673-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ673-AZ?

All 2SJ673-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ673-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ673-AZ part is unused and in its original packaging.

Return procedure for 2SJ673-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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