Renesas 2SJ687-ZK-E2-AY

Overview

2SJ687-ZK-E2-AY from Renesas Electronics is a P-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies. It delivers R_DS(on) = 7.0 mΩ max at V_GS = −4.5 V, supports −20 A continuous drain current (T_C = 25°C), and features avalanche-rated ruggedness (E_AS = 40 mJ). Its TO-252 (MP-3ZK) package enables compact PCB layout in 12 V/24 V input systems.

For engineers reviewing the 2SJ687-ZK-E2-AY datasheet, 2SJ687-ZK-E2-AY pinout, 2SJ687-ZK-E2-AY application, or 2SJ687-ZK-E2-AY equivalent, this page provides verified electrical specs, thermal derating curves, gate charge behavior, body diode recovery characteristics, and real-world switching timing data under defined test conditions (V_DD = −10 V, I_D = −10 A, R_G = 3 Ω).

Technical Context

This device operates as a low-side synchronous rectifier or high-side switch in buck converters and OR-ing circuits. Its −1.45 V typical V_GS(off) ensures reliable turn-off with standard logic-level gate drivers, while its 4400 pF C_iss and 28 nC Q_GD define gate drive strength requirements for <300 ns total switching time.

The integrated body diode exhibits t_rr = 200 ns and Q_rr = 240 nC at di/dt = −100 A/μs, enabling use in freewheeling paths without external Schottky supplementation in moderate-frequency (<500 kHz) topologies.

Key Specifications

Pinout & Package

2SJ687-ZK-E2-AY uses the TO-252 (MP-3ZK) surface-mount package: 6.1 mm × 10.4 mm footprint, 3.47°C/W channel-to-case thermal resistance, and exposed drain pad (Pin 2 & 4) for direct thermal coupling to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9540NPBF and Si2305DS-T1-E3, the 2SJ687-ZK-E2-AY uniquely balances low R_DS(on), logic-level drivability, avalanche ruggedness, and TO-252 thermal performance-making it optimal for 10–20 A industrial switching where reliability and efficiency coexist.

Availability

2SJ687-ZK-E2-AY is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, DC-DC synchronous rectifiers, and motor drive half-bridges requiring stable component supply and long-term manufacturability.

Supply support for 2SJ687-ZK-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SJ687-ZK-E2-AY belongs to Renesas' legacy power MOSFET product line, engineered for robust, high-current switching in cost-sensitive industrial power systems where thermal stability and avalanche immunity are essential.

FAQ

What is the maximum continuous drain current for 2SJ687-ZK-E2-AY at 85°C case temperature?

The 2SJ687-ZK-E2-AY datasheet specifies I_D(DC) = −20 A at T_C = 25°C, with linear derating to zero at T_C = 150°C. At 85°C case temperature, the maximum continuous drain current is approximately −13 A, calculated using the 0.133 A/°C slope from the derating curve in Figure 3 of D18719EJ2V0DS. This value assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with temperature.

Does 2SJ687-ZK-E2-AY support gate drive from a 3.3 V microcontroller without level shifting?

Yes, the 2SJ687-ZK-E2-AY is explicitly characterized for 2.5 V drive capability: R_DS(on) ≤ 20 mΩ at V_GS = −2.5 V and I_D = −10 A. A 3.3 V microcontroller GPIO can drive the gate through a simple inverting stage (e.g., NPN transistor) to deliver −3.3 V, achieving R_DS(on) ≤ 9.0 mΩ per datasheet condition RDS(on)2 - sufficient for most 10 A applications with acceptable conduction loss.

What is the thermal resistance from channel to ambient for 2SJ687-ZK-E2-AY in standard JEDEC PCB layout?

The datasheet does not specify R_th(ch-A) for the TO-252 package under JEDEC standards; it only provides R_th(ch-C) = 3.47°C/W (channel-to-case) and R_th(ch-A) = 125°C/W (channel-to-ambient, no copper). In practice, with 1 in² (6.45 cm²) of 2 oz copper on both sides connected to the drain pad, measured R_th(ch-A) typically falls between 40–60°C/W. For accurate thermal design, users must validate via board-specific simulation or measurement, as ambient resistance depends heavily on copper area and airflow.

Can 2SJ687-ZK-E2-AY replace an N-channel MOSFET in a high-side switch configuration without a charge pump?

Yes - unlike N-channel devices, the 2SJ687-ZK-E2-AY is a P-channel MOSFET, so it functions as a high-side switch with gate driven negative relative to source. When the source connects to input voltage (e.g., +12 V), pulling the gate to ground turns the device fully on. No charge pump or bootstrap circuit is needed, simplifying gate drive design and reducing component count compared to N-channel alternatives like the 2SK3562.

Is 2SJ687-ZK-E2-AY compliant with RoHS and REACH regulations?

Yes, the 2SJ687-ZK-E2-AY carries pure Sn (tin) lead plating and is explicitly marked "Pb-free" in the ordering information table of D18719EJ2V0DS. It complies with EU RoHS Directive 2011/65/EU and REACH SVHC requirements as confirmed by Renesas' material declarations. No exemptions apply, and the device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.