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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK1058-E

Name: 2SK1058-E
Brand: Renesas
SKU: 2SK1058-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK1058-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: 2SK1058-E.pdf

Description:: MOSFET N-CH 160V 7A TO3P

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Product details

Overview

2SK1058-E from Renesas Electronics is a silicon N-channel enhancement-mode power MOSFET in TO-3P package, rated for 160 V drain-to-source voltage, 7 A continuous drain current, and 100 W channel dissipation at TC = 25°C. It features gate protection diodes, low output capacitance (Coss = 350 pF), and fast switching (ton = 180 ns, toff = 60 ns), designed for low-frequency audio power amplifier stages.

For engineers reviewing the 2SK1058-E datasheet, 2SK1058-E pinout, 2SK1058-E application, or 2SK1058-E equivalent, this device is selected for complementary audio amplifier designs requiring high safe operating area, stable transfer characteristics across –25°C to +75°C, and gate-drive robustness with integrated protection diodes.

Technical Context

The 2SK1058-E operates as a single-ended, enhancement-mode N-channel power switch optimized for linear amplification-not digital switching-evidenced by its wide SOA curve, low VGS(off) range (0.15–1.45 V), and frequency-characterized |yfs| (0.7–1.4 S at ID = 3 A). Its gate protection diodes enable direct drive without external clamping in push-pull configurations.

It forms a complementary pair with 2SJ160/2SJ161/2SJ162 P-channel devices, supporting Class AB audio output stages. The device's thermal derating curve specifies 100 W at TC = 25°C, dropping linearly to zero at TC = 150°C, and its input capacitance (Ciss = 600 pF) is specified at VGS = –5 V, confirming bias-dependent charge behavior critical for amplifier stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSX	160 V - Maximum blocking voltage before avalanche; defines upper rail limit in audio amplifier supply design
I_D	7 A - Continuous drain current at T_C = 25°C; sets minimum heatsink requirement for 50 W RMS output
P_ch	100 W - Channel dissipation at T_C = 25°C; determines thermal interface design and copper pour area on PCB
\|y_fs\|	0.7–1.4 S - Forward transfer admittance at ID = 3 A, V_DS = 10 V; directly impacts small-signal gain and bias stability
C_iss	600 pF - Input capacitance at V_GS = –5 V, V_DS = 10 V, f = 1 MHz; affects high-frequency loop stability and driver stage loading
t_on/t_off	180/60 ns - Switching times at V_DD = 20 V, I_D = 4 A; confirms suitability for <100 kHz audio band without slew-induced distortion

Pinout & Package

Package: TO-3P (RENESAS code PRSS0004ZE-A), metal flange-mounted, isolated drain, 3-terminal through-hole package with 5.0 g typical mass.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; protected by internal Zener diode to ±15 V; requires low-impedance drive for fast turn-on
2 (Source)	Reference node / current return	Connected to emitter of complementary P-channel device in push-pull output; flange is electrically tied to source
3 (Drain)	Power output terminal	High-current output path to load; electrically isolated from flange; mounted to heatsink via insulating washer

Key Features

Feature	Design Value
Enhancement-mode operation	Requires positive V_GS > V_GS(off) (0.15–1.45 V) to conduct; eliminates need for negative bias supply in Class A/B amplifiers
Integrated gate protection diodes	±15 V V_GSS rating with built-in clamps; prevents gate oxide damage during transient overvoltage in reactive speaker loads
Wide Safe Operating Area (SOA)	Supports DC, pulsed, and 1-second transient operation up to 50 V/10 A; enables reliable operation under clipping and short-circuit conditions
Complementary pairing capability	Matched V_GS(off), \|y_fs, and C_iss with 2SJ160/2SJ161/2SJ162; simplifies symmetric biasing and crossover distortion reduction

Applications

Hi-Fi Audio Power Amplifier	Public Address Output Stage
Use Scenario: Discrete Class AB push-pull output stage delivering 30–60 W RMS into 4–8 Ω loudspeakers with <0.1% THD+N. IC Role / Device Role / Timing Role: Primary N-channel power switch in symmetrical output pair; handles full positive half-cycle current with precise linearity. Use Value: Low V_DS(sat) (≤12 V at I_D = 7 A) and flat \|y_fs vs. frequency ensure minimal gain compression and harmonic distortion across 20 Hz–20 kHz.	Use Scenario: High-reliability 50 W output module for commercial PA systems operating continuously at elevated ambient temperatures. IC Role / Device Role / Timing Role: Linear power switch in transformer-coupled or direct-coupled output stage; manages thermal stress during long-duration speech/music playback. Use Value: 150°C maximum channel temperature and SOA-rated operation up to 100 ms pulses allow sustained output without thermal shutdown or secondary breakdown.
Studio Monitor Driver	Instrument Amplifier Output
Use Scenario: Bi-amplified near-field studio monitor using discrete output stages per frequency band, demanding tight matching and low noise. IC Role / Device Role / Timing Role: Upper-rail N-channel device in active crossover-fed mid/high-frequency amplifier; biased for low idle current and high slew rate. Use Value: Tight V_GS(off) tolerance (0.15–1.45 V) and low Crss (10 pF) minimize intermodulation distortion and improve transient response fidelity.	Use Scenario: Guitar/bass amplifier output stage requiring ruggedness against speaker cable shorts, impedance mismatches, and high-voltage transients. IC Role / Device Role / Timing Role: Final power gain element in cathode-follower or solid-state hybrid topology; subjected to reactive loads and high peak voltages. Use Value: Gate protection diodes and 160 V V_DSX rating prevent failure during speaker disconnect events or tube rectifier overshoot in hybrid designs.

Hi-Fi Audio Power Amplifier

Public Address Output Stage

Use Scenario: Discrete Class AB push-pull output stage delivering 30–60 W RMS into 4–8 Ω loudspeakers with <0.1% THD+N.

IC Role / Device Role / Timing Role: Primary N-channel power switch in symmetrical output pair; handles full positive half-cycle current with precise linearity.

Use Value: Low V_DS(sat) (≤12 V at I_D = 7 A) and flat |y_fs vs. frequency ensure minimal gain compression and harmonic distortion across 20 Hz–20 kHz.

Use Scenario: High-reliability 50 W output module for commercial PA systems operating continuously at elevated ambient temperatures.

IC Role / Device Role / Timing Role: Linear power switch in transformer-coupled or direct-coupled output stage; manages thermal stress during long-duration speech/music playback.

Use Value: 150°C maximum channel temperature and SOA-rated operation up to 100 ms pulses allow sustained output without thermal shutdown or secondary breakdown.

Studio Monitor Driver

Instrument Amplifier Output

Use Scenario: Bi-amplified near-field studio monitor using discrete output stages per frequency band, demanding tight matching and low noise.

IC Role / Device Role / Timing Role: Upper-rail N-channel device in active crossover-fed mid/high-frequency amplifier; biased for low idle current and high slew rate.

Use Value: Tight V_GS(off) tolerance (0.15–1.45 V) and low Crss (10 pF) minimize intermodulation distortion and improve transient response fidelity.

Use Scenario: Guitar/bass amplifier output stage requiring ruggedness against speaker cable shorts, impedance mismatches, and high-voltage transients.

IC Role / Device Role / Timing Role: Final power gain element in cathode-follower or solid-state hybrid topology; subjected to reactive loads and high peak voltages.

Use Value: Gate protection diodes and 160 V V_DSX rating prevent failure during speaker disconnect events or tube rectifier overshoot in hybrid designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SK1057-E	Lower V_DSX (140 V), same package and pinout; otherwise identical electrical specs and SOA	Suitable where supply rails ≤ ±60 V; reduced margin for transient spikes in unregulated supplies	Select when system max V_DS remains below 140 V and cost optimization is prioritized
STW12NK90Z	900 V V_DS, 12 A I_D, TO-247 package; higher C_iss (1900 pF), no integrated gate protection	Targeted at SMPS and high-voltage switching-not linear audio-due to different SOA and gate drive requirements	Use only in switching applications; not a drop-in replacement due to package, protection, and SOA mismatch

Compared with 2SK1057-E, the 2SK1058-E provides 20 V higher blocking margin essential for ±70 V rails in high-power amplifiers; compared with STW12NK90Z, it offers gate protection and SOA optimized for linear operation-not high-voltage switching-making it unsuitable for flyback or resonant converters.

Availability

2SK1058-E is available at Aetrix Electronics and suitable for Hi-Fi audio power amplifiers, public address systems, and studio monitor drivers requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and professional audio OEMs.

Supply support for 2SK1058-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK1058-E belongs to Renesas' legacy discrete power MOSFET product line, developed specifically for high-fidelity linear audio amplifier applications requiring ruggedness, matched complementary pairing, and wide SOA performance.

FAQ

What is the maximum continuous drain current rating for the 2SK1058-E?

The 2SK1058-E has a maximum continuous drain current (I_D) of 7 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the derating curve-dropping to approximately 3.5 A at T_C = 100°C-and must be applied with appropriate heatsinking to maintain safe channel temperature below 150°C.

Does the 2SK1058-E include built-in gate protection?

Yes, the 2SK1058-E is equipped with integrated gate protection diodes, enabling a ±15 V gate-to-source voltage (V_GSS) rating. This protects the gate oxide from electrostatic discharge and transient overvoltage during operation-especially critical in audio amplifier output stages driving reactive speaker loads where voltage spikes commonly occur.

Is the 2SK1058-E pin-compatible with other devices in the 2SK1056/2SK1057 series?

Yes, the 2SK1058-E shares identical TO-3P package (PRSS0004ZE-A), pinout (Gate–Source–Drain), and mechanical dimensions with 2SK1056-E and 2SK1057-E. However, absolute maximum ratings differ-particularly V_DSX (160 V for 2SK1058-E vs. 120 V/140 V)-so electrical substitution requires verification of voltage margin in the target circuit.

What is the typical forward transfer admittance |y_fs| of the 2SK1058-E and why does it matter?

The 2SK1058-E exhibits a typical forward transfer admittance |y_fs| of 1.0 S at I_D = 3 A and V_DS = 10 V, with a min–max range of 0.7–1.4 S. This parameter directly determines small-signal transconductance, affecting gain linearity, bias point stability, and harmonic distortion performance in audio amplifier designs.

Can the 2SK1058-E be used in switching power supplies?

The 2SK1058-E is not recommended for switching power supplies. Its SOA, capacitance profile (C_iss = 600 pF, C_oss = 350 pF), and lack of optimized body diode recovery make it suited for linear amplification-not high-frequency hard-switching. For SMPS, Renesas recommends dedicated switching MOSFETs such as the R60xxENx series.

2SK1058-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 160 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

2SK1058-E FAQ

1.How can I place an order for 2SK1058-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1058-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1058-E reliable?

The price and inventory of 2SK1058-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1058-E is usually 5 days.

3.What payment methods are accepted for 2SK1058-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1058-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1058-E?

2SK1058-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1058-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1058-E?

For technical support, including 2SK1058-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1058-E requirements.

6.How does Aetrix verify that 2SK1058-E is sourced from the original manufacturer or authorized distributors?

All 2SK1058-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1058-E meets industry standards.

7.What is the process for return or replacement of 2SK1058-E?

All 2SK1058-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1058-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1058-E part is unused and in its original packaging.

Return procedure for 2SK1058-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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