Renesas 2SK1093-E

Overview

2SK1093-E from Toshiba is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits, featuring 60 V V_DSS, 10 A continuous drain current (I_D), 0.12 Ω typical R_DS(on) at V_GS = 10 V, and 4 V gate threshold enabling direct 5 V logic-level drive.

For engineers reviewing the 2SK1093-E datasheet, 2SK1093-E pinout, 2SK1093-E application, or 2SK1093-E equivalent, key selection criteria include its low on-resistance at 4 V gate drive, fast switching times (t_d(on) = 5 ns, t_f = 90 ns), body diode recovery performance (t_rr = 125 ns), and TO-220FM package thermal capability (θ_ch–c = 6.25 °C/W).

Technical Context

This discrete power MOSFET operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 1.0–2.0 V gate threshold (V_GS(off)) and ±20 V gate-source rating support robust gate drive margin, while the 0.15 Ω max R_DS(on) at 4 V ensures efficient conduction under 5 V microcontroller control.

The device integrates a co-packaged body diode with 1.2 V forward voltage (V_DF) and 125 ns reverse recovery time (t_rr), making it suitable for freewheeling paths in buck converters and solenoid drivers where diode conduction and recovery losses must be minimized.

Key Specifications

Pinout & Package

Package: TO-220FM - Insulated flange variant with electrically isolated metal tab, rated for 6.25 °C/W junction-to-case thermal resistance and compatible with standard TO-220 heatsinks using insulating hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with STP10NK60ZFP and IRFZ44NPBF, the 2SK1093-E uniquely balances 60 V rating, guaranteed 4 V gate drive, and sub-0.2 Ω R_DS(on) - making it optimal for cost-sensitive 48 V industrial switching where logic-level compatibility and thermal efficiency are jointly critical.

Availability

2SK1093-E is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and solenoid actuation applications requiring stable component supply across industrial OEM production cycles.

Supply support for 2SK1093-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and application-specific optimization.

The 2SK1093-E belongs to Toshiba's legacy power MOSFET family targeting industrial power conversion, where low gate drive voltage, robust SOA, and body diode performance are prioritized over ultra-high-frequency RF operation.

FAQ

What is the maximum continuous drain current rating for the 2SK1093-E?

The 2SK1093-E has a maximum continuous drain current (I_D) of 10 A at case temperature T_C = 25 °C. This rating decreases linearly with increasing case temperature, reaching zero at 150 °C channel temperature. Derating curves confirm 6 A at T_C = 100 °C, making thermal management essential for sustained operation above ambient.

Can the 2SK1093-E be driven directly from a 5 V microcontroller GPIO?

Yes - the 2SK1093-E is explicitly characterized for 4 V gate drive and guarantees full enhancement at V_GS = 4 V, with R_DS(on) ≤ 0.22 Ω. Since most 5 V MCUs deliver ≥4.5 V logic-high levels, the 2SK1093-E operates reliably without external gate drivers in applications like solenoid control and low-frequency motor drives.

Does the 2SK1093-E include an integrated body diode, and what are its key parameters?

Yes, the 2SK1093-E integrates a parasitic body diode between drain and source. Its forward voltage (V_DF) is 1.2 V at I_F = 10 A, and reverse recovery time (t_rr) is 125 ns under specified conditions (di_F/dt = 50 A/µs). These values are measured with V_GS = 0 and define freewheeling behavior in inductive switching circuits.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SK1093-E?

The 2SK1093-E has a channel-to-case thermal resistance (θ_ch–c) of 6.25 °C/W, measured under standard mounting conditions on a TO-220FM-compatible heatsink. This value is used in transient thermal impedance calculations and determines minimum heatsink requirements for continuous 10 A operation at elevated ambient temperatures.

Is the 2SK1093-E pin-compatible with other TO-220FM MOSFETs?

The 2SK1093-E uses standard TO-220FM pinout (Gate-Drain-Source, left-to-right with flange facing outward), matching industry-standard layout. However, electrical characteristics-including gate threshold, R_DS(on), and SOA-are specific to this part. Always verify drive compatibility and thermal limits before substituting, even with identical packaging.