Renesas 2SK1094-93
- Part No.:
- 2SK1094-93
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1094-93.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:206
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Product details
Overview
2SK1094-93 from Renesas Electronics (formerly Hitachi) is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits. It features 60 V VDSS, 15 A continuous drain current, and low RDS(on) of 0.055 Ω at VGS = 10 V, enabling efficient power control in compact industrial power stages.
For engineers reviewing the 2SK1094-93 datasheet, 2SK1094-93 pinout, 2SK1094-93 application, or 2SK1094-93 equivalent, key selection criteria include gate threshold voltage (1.0–2.0 V), 4 V logic-level drivability, body diode recovery time (135 ns), and TO-220FM package thermal performance for sustained 25 W channel dissipation.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for fast switching with minimal gate charge. Its 0.075 Ω RDS(on) at 4 V gate drive enables direct interface with 5 V microcontrollers without level-shifting circuitry.
Dynamic parameters-including 10 ns turn-on delay, 70 ns rise time, 180 ns turn-off delay, and 120 ns fall time-support operation up to several hundred kHz in hard-switched topologies. The integrated body diode exhibits 1.3 V forward voltage and 135 ns reverse recovery time under rated conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche conduction begins |
| ID (continuous) | 15 A - Continuous drain current rating at TC = 25°C, defining steady-state power handling |
| RDS(on) @ VGS = 4 V | 0.075–0.095 Ω - Enables logic-level drive compatibility with standard 5 V digital outputs |
| RDS(on) @ VGS = 10 V | 0.055–0.065 Ω - Determines conduction loss in high-efficiency PWM stages |
| tr / tf | 70 ns / 120 ns - Sets minimum practical switching period and EMI profile in SMPS designs |
| VGS(off) | 1.0–2.0 V - Gate threshold range ensuring reliable turn-on margin with 5 V drive |
| trr | 135 ns - Body diode recovery time limiting usable frequency in synchronous rectification or freewheeling paths |
Pinout & Package
2SK1094-93 is housed in a TO-220FM package with insulated tab, offering mechanical robustness and thermal performance suitable for heatsink mounting in industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; requires ≤±20 V bias and drives with ≤10 µA leakage at ±16 V |
| 2 (Drain) | High-side power output | Connects to load or bus rail; carries full switched current and withstands 60 V transient spikes |
| 3 (Source) | Power return reference | Serves as common return path for drain current and gate drive reference; tied to system ground in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4 V, eliminating need for gate driver ICs in 5 V systems |
| Low RDS(on) | 0.055 Ω typical at 10 V ensures <1 W conduction loss at 15 A, reducing heatsink requirements |
| Fast switching speed | 280 ns total switching time (td(on)+tr+td(off)+tf) supports >300 kHz operation in DC-DC converters |
| Integrated body diode | 15 A rated reverse recovery diode with 135 ns trr allows use in freewheeling and bidirectional current paths |
| TO-220FM package | Insulated metal tab enables direct heatsink mounting without isolation hardware, simplifying thermal design |
Applications
| Motor Drive | DC-DC Converter |
|---|---|
Use Scenario: Brushed DC motor H-bridge half-bridge leg in industrial actuators requiring 24–48 V supply and 10–15 A peak current. IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and PWM speed regulation. Use Value: 0.075 Ω RDS(on) at 4 V gate drive reduces conduction loss by >40% versus standard 10 V gate MOSFETs, improving battery runtime. | Use Scenario: Primary-side switch in 48 V input, 12 V output buck converter for telecom power supplies operating at 250 kHz. IC Role / Device Role / Timing Role: High-frequency power switch managing energy transfer during on-time intervals. Use Value: 70 ns rise time and 120 ns fall time minimize switching transition losses, sustaining >92% efficiency at full load. |
| Solenoid Driver | Power Switch Module |
Use Scenario: 24 V solenoid actuation circuit in automated valve control systems requiring fast turn-on (<100 µs) and hold-current regulation. IC Role / Device Role / Timing Role: Single-ended switch delivering pulsed high current to inductive load with controlled decay via body diode. Use Value: 135 ns body diode reverse recovery time prevents voltage overshoot and snubber component overdesign during inductive flyback. | Use Scenario: Compact 60 V/15 A power switch module for programmable logic controller (PLC) output cards driving mixed resistive/inductive loads. IC Role / Device Role / Timing Role: Main power switching device interfacing field I/O with internal 5 V control logic. Use Value: TO-220FM insulated tab eliminates need for mica washers or silicone pads, reducing assembly steps and thermal interface resistance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPBF | RDS(on) = 0.028 Ω @ 10 V; VGS(th) = 2–4 V; TO-220AB package (non-insulated tab) | Higher drive voltage requirement limits direct 5 V MCU interface without gate boosting | Preferred where lower conduction loss justifies added gate drive complexity and isolation hardware |
| STP16NF06L | RDS(on) = 0.055 Ω @ 5 V; VGS(th) = 1–2.5 V; TO-220FP package (full-pack, insulated) | Lower gate charge and faster switching (tr/tf ≈ 40/30 ns) but reduced Pch rating (20 W) | Better suited for higher-frequency (>500 kHz) applications where thermal margin permits lower power dissipation |
Compared with IRFZ44NPBF and STP16NF06L, the 2SK1094-93 offers balanced trade-offs: guaranteed 4 V drive capability, TO-220FM insulation, and 25 W channel dissipation-making it optimal for cost-sensitive, medium-frequency industrial power switches where gate simplicity and thermal reliability are prioritized over ultra-low RDS(on) or sub-100 ns transitions.
Availability
2SK1094-93 is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and solenoid drive applications requiring stable component supply across extended production lifecycles.
Supply support for 2SK1094-93 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
The 2SK1094-93 belongs to Hitachi's legacy discrete power MOSFET product line, engineered for rugged industrial switching applications demanding logic-level drive, fast transients, and reliable thermal performance in TO-220 packages.
FAQ
What is the gate threshold voltage range for the 2SK1094-93?
The 2SK1094-93 has a specified gate-to-source cutoff voltage (VGS(off)) of 1.0–2.0 V at ID = 1 mA and VDS = 10 V. This low threshold enables full enhancement with 4 V gate drive, making the 2SK1094-93 compatible with standard 5 V logic outputs without external level shifting. The narrow range ensures consistent turn-on behavior across temperature and unit variation.
Can the 2SK1094-93 be used with a 3.3 V microcontroller output?
The 2SK1094-93 is not guaranteed to operate reliably with 3.3 V gate drive. Its RDS(on) is characterized at VGS = 4 V and 10 V, and the maximum VGS(off) is 2.0 V. At 3.3 V, the device may remain partially enhanced, increasing conduction loss and thermal stress. For 3.3 V systems, a gate driver or logic-level MOSFET with lower VGS(th) is recommended instead of the 2SK1094-93.
What is the maximum continuous power dissipation for the 2SK1094-93?
The 2SK1094-93 has a channel dissipation (Pch) rating of 25 W at case temperature TC = 25°C. This value decreases linearly with rising case temperature, reaching zero at TC = 150°C. The thermal resistance θch–c is 5.0°C/W, meaning a 25 W load generates a 125°C temperature rise above ambient-so effective heatsinking is essential to maintain safe channel temperature below 150°C for long-term reliability of the 2SK1094-93.
Does the 2SK1094-93 have an integrated body diode, and what are its characteristics?
Yes, the 2SK1094-93 includes an integral body diode rated for 15 A reverse drain current (IDR). Its forward voltage (VDF) is 1.3 V at IF = 15 A and VGS = 0, and its reverse recovery time (trr) is 135 ns under specified test conditions (IF = 15 A, diF/dt = 50 A/µs). These parameters make the 2SK1094-93 suitable for freewheeling and inductive load commutation without external diodes in many applications.
What is the package type and insulation status of the 2SK1094-93?
The 2SK1094-93 uses the TO-220FM package, which features a fully insulated metal tab. Unlike standard TO-220AB variants, the TO-220FM eliminates the need for insulating washers or thermal pads when mounted directly to a heatsink-reducing thermal resistance and assembly complexity. This construction is confirmed in the device outline diagram and mechanical drawings referenced in the original Hitachi datasheet for the 2SK1094-93.
2SK1094-93 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1094-93 FAQ
1.How can I place an order for 2SK1094-93 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1094-93 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1094-93 reliable?
The price and inventory of 2SK1094-93 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1094-93 is usually 5 days.
3.What payment methods are accepted for 2SK1094-93?
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4.How is shipping managed for 2SK1094-93?
2SK1094-93 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1094-93 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1094-93?
For technical support, including 2SK1094-93 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1094-93 requirements.
6.How does Aetrix verify that 2SK1094-93 is sourced from the original manufacturer or authorized distributors?
All 2SK1094-93 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1094-93 meets industry standards.
7.What is the process for return or replacement of 2SK1094-93?
All 2SK1094-93 units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1094-93, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1094-93 part is unused and in its original packaging.
Return procedure for 2SK1094-93:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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