Renesas 2SK1152-90L
- Part No.:
- 2SK1152-90L
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1152-90L.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:796
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Product details
Overview
2SK1152-90L from Renesas is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 500 V VDSS, 1.5 A continuous drain current, 4.0 Ω typical RDS(on) at VGS = 10 V, 10 ns rise time, and DPAK(L)-(1) surface-mount package with dual-drain configuration.
For engineers reviewing the 2SK1152-90L datasheet, 2SK1152-90L pinout, 2SK1152-90L application, or 2SK1152-90L equivalent, this device is selected for high-voltage, medium-current switching where low gate drive current, fast turn-on/turn-off, and absence of secondary breakdown are critical design requirements.
Technical Context
This MOSFET operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 500 V blocking rating supports 380 V DC bus applications, while its 20 W channel dissipation at TC = 25°C enables thermally constrained PCB layouts. The device uses planar V-groove process technology to achieve stable RDS(on) over temperature and eliminate secondary breakdown.
It integrates an intrinsic body diode with 1.0 V forward voltage at 1.5 A and 220 ns reverse recovery time-enabling synchronous rectification support in quasi-resonant or freewheeling paths. Gate charge is optimized at 20 nC (typ.) for efficient 100–500 kHz operation without excessive driver loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Supports 380 V DC input systems with 30% safety margin |
| RDS(on) (typ.) | 4.0 Ω at ID = 1 A, VGS = 10 V - Enables <1.5 W conduction loss at rated current |
| tr / tf | 10 ns / 10 ns - Allows clean 500 kHz switching with minimal overlap loss |
| Qg (typ.) | 20 nC - Compatible with standard gate drivers (e.g., TC4427, UCC27531) without boost stages |
| VGS(off) | 2.0–3.0 V - Ensures reliable enhancement-mode turn-off with TTL/CMOS logic-level drive |
| Ciss / Coss | 160 pF / 45 pF - Low input/output capacitance reduces Miller effect and EMI generation |
| ID(pulse) | 6 A (10 µs, 1% duty) - Supports short-term overload handling in peak-current-mode controllers |
Pinout & Package
2SK1152-90L is housed in the Renesas PRSS0004ZD-A package, branded DPAK(L)-(1), a surface-mount variant of the standard DPAK with extended drain tab area for improved thermal performance (θch–c = 6.25°C/W). The package includes four terminals: two electrically connected drain leads (pins 2 and 4), one gate (pin 1), and one source (pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤10 µA leakage; driven by 10 V logic for full enhancement |
| 2 & 4 | Drain (common) | High-voltage output node; both pins bonded internally to maximize current sharing and thermal path |
| 3 | Source | Reference node for gate drive; connects to power ground or floating return in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe linear-mode operation and robustness against SOA violations in transient overload |
| Low drive current requirement | Gate threshold (VGS(off)) centered at 2.5 V allows direct microcontroller GPIO drive without level-shifting |
| Fast switching with low Qg | 20 nC total gate charge minimizes driver power loss and simplifies gate resistor selection |
| Integrated body diode | 1.0 V VDF at 1.5 A supports freewheeling in buck/boost topologies without external diode |
| Dual-drain thermal design | Pins 2 and 4 share heat load and reduce thermal resistance by ~15% vs. single-drain DPAK(S) |
Applications
| DC-DC Buck Converter | Switching Regulator Power Stage |
|---|---|
|
Use Scenario: Step-down conversion from 400 V DC bus to 12 V/2 A output in industrial power supplies. IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with synchronous rectification. Use Value: 4.0 Ω RDS(on) limits conduction loss to 6 W max at full load; 10 ns rise time ensures <2% dead-time loss. |
Use Scenario: Primary-side switch in isolated flyback converter for telecom AC/DC adapters. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled power switch with integrated snubberless operation. Use Value: 500 V VDSS accommodates reflected flyback voltage spikes up to 420 V without clamping. |
| Motor Drive Half-Bridge | LED Driver Switching Stage |
|
Use Scenario: Low-power BLDC motor control in HVAC blowers (24–48 V input, 1.2 A phase current). IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg with bootstrap gate drive. Use Value: 220 ns trr and 1.0 V VDF minimize body-diode conduction loss during shoot-through prevention. |
Use Scenario: Constant-current LED string driver for architectural lighting (350 V DC link, 350 mA output). IC Role / Device Role / Timing Role: Primary switch in buck-boost topology regulating LED current via current-sense feedback. Use Value: No secondary breakdown allows safe operation under open-circuit LED fault conditions without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 Ω RDS(on), 25 nC Qg, TO-220FP package | Through-hole mounting; higher thermal resistance (θJA = 62°C/W vs. 40°C/W for DPAK-L) | Prefer when board space permits through-hole assembly and higher peak pulse current (9 A) is required. |
| IXTP1R5N50D | 500 V, 5.0 Ω RDS(on), 16 nC Qg, TO-220 package | Higher RDS(on) but lower gate charge; no dual-drain thermal enhancement | Choose when gate drive efficiency is prioritized over conduction loss in low-duty-cycle burst-mode operation. |
Compared with STP5NK50ZFP and IXTP1R5N50D, the 2SK1152-90L delivers superior thermal performance per unit area due to its dual-drain DPAK(L)-(1) package and lower RDS(on), making it optimal for compact, surface-mounted DC-DC modules where layout density and thermal management are constrained.
Availability
2SK1152-90L is available at Aetrix Electronics and suitable for DC-DC converters, switching regulators, and motor drive half-bridges requiring stable component supply across industrial production cycles.
Supply support for 2SK1152-90L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The 2SK1152-90L belongs to Renesas' legacy high-voltage power MOSFET family, engineered specifically for reliability-critical switching regulator and DC-DC converter applications demanding ruggedness, predictable SOA, and low gate drive burden.
FAQ
What is the maximum continuous drain current rating for the 2SK1152-90L?
The 2SK1152-90L has a continuous drain current (ID) rating of 1.5 A at TC = 25°C. This value derates linearly above 25°C case temperature, reaching zero at 150°C channel temperature. For sustained operation, thermal design must ensure case temperature remains within the safe operating area defined in the datasheet's derating curve.
Does the 2SK1152-90L have a built-in body diode, and what are its key parameters?
Yes, the 2SK1152-90L integrates a body diode with a forward voltage (VDF) of 1.0 V at IF = 1.5 A and reverse recovery time (trr) of 220 ns under specified test conditions (diF/dt = 100 A/µs, VGS = 0). This diode supports freewheeling and synchronous rectification functions without requiring external components.
Can the 2SK1152-90L be driven directly by a 3.3 V microcontroller GPIO?
No-the 2SK1152-90L requires ≥10 V gate-to-source voltage for guaranteed low RDS(on) operation. At 3.3 V, the device remains in weak inversion with high on-resistance (>100 Ω), causing excessive heating. A dedicated gate driver (e.g., TC4427) or level-shifter is required to deliver 10–15 V to the gate of the 2SK1152-90L.
What is the meaning of "-90L" in the part number 2SK1152-90L?
The "-90L" suffix identifies the specific variant within the 2SK1152 family: "90" denotes the RDS(on) grade (4.0 Ω typ.), and "L" specifies the DPAK(L)-(1) package (PRSS0004ZD-A), distinguishing it from the S-version (DPAK(S), PRSS0004ZD-C) used in 2SK1152STL-E. This suffix ensures mechanical and thermal compatibility in automated assembly.
Is the 2SK1152-90L suitable for use in automotive applications?
The 2SK1152-90L is not qualified to AEC-Q101 or automotive-grade reliability standards. Renesas explicitly states in the datasheet that its semiconductors are not designed for transportation, vehicular, or life-critical systems. For automotive use, consult Renesas' official automotive product line or qualified alternatives such as the RV1S92xx series.
2SK1152-90L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1152-90L FAQ
1.How can I place an order for 2SK1152-90L through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1152-90L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1152-90L reliable?
The price and inventory of 2SK1152-90L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1152-90L is usually 5 days.
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2SK1152-90L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1152-90L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1152-90L?
For technical support, including 2SK1152-90L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1152-90L requirements.
6.How does Aetrix verify that 2SK1152-90L is sourced from the original manufacturer or authorized distributors?
All 2SK1152-90L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1152-90L meets industry standards.
7.What is the process for return or replacement of 2SK1152-90L?
All 2SK1152-90L units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1152-90L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1152-90L part is unused and in its original packaging.
Return procedure for 2SK1152-90L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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