Renesas 2SK1155-E

Overview

2SK1155-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-220AB package, designed for high-speed power switching applications. It features 450 V drain-to-source breakdown voltage, 5 A continuous drain current, 1.0–1.4 Ω static on-resistance at V_GS = 10 V, 10 ns turn-on delay, and integrated body diode with 300 ns reverse recovery time - deployed in DC-DC converters and switching regulators.

For engineers reviewing the 2SK1155-E datasheet, 2SK1155-E pinout, 2SK1155-E application, or 2SK1155-E equivalent, key selection criteria include V_DSS rating margin, R_DS(on) thermal stability, gate charge (Q_g ≈ 24 nC), safe operating area (SOA) limits at pulse widths ≤10 µs, and flange-mounted thermal dissipation capability (θ_ch–c = 2.50°C/W).

Technical Context

This MOSFET operates as a unidirectional high-voltage switch with enhancement-mode gate control and no secondary breakdown limitation. Its low drive current requirement stems from gate threshold voltage (V_GS(off) = 2.0–3.0 V) and input capacitance (C_iss = 640 pF), enabling direct drive from standard logic-level controllers.

The device integrates a fast-recovery body diode (V_DF = 0.95 V at I_F = 5 A, t_rr = 300 ns) and exhibits SOA-limited operation below 10 µs pulses, where conduction is governed by R_DS(on) rather than thermal constraints. Channel temperature must not exceed 150°C under any condition.

Key Specifications

Pinout & Package

2SK1155-E uses the TO-220AB package (RENESAS code PRSS0004AC-A), with electrically isolated flange serving as the Drain terminal and mechanical mounting surface. Thermal resistance from channel to case is 2.50°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK50ZFP and IRFBC40APBF, the 2SK1155-E offers optimal balance of 450 V rating, 5 A current, and isolated flange for grounded-heat-sink layouts - making it especially suited for cost-sensitive industrial DC-DC and motor drive designs where gate protection is externally managed.

Availability

2SK1155-E is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and motor drive circuits requiring stable component supply, long-term production continuity, and RoHS-compliant packaging.

Supply support for 2SK1155-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK1155-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial-grade switching applications - emphasizing rugged SOA, low gate drive demand, and thermal stability.

FAQ

What is the maximum allowable gate-to-source voltage for the 2SK1155-E?

The 2SK1155-E has a rated gate-to-source voltage (V_GSS) of ±30 V. Exceeding this limit risks permanent gate oxide damage. In practice, gate drive should be limited to +10 V to +15 V for reliable enhancement-mode operation, with negative bias (e.g., –5 V to –10 V) recommended during turn-off to improve noise immunity. The 2SK1155-E datasheet confirms ±30 V as absolute maximum under transient conditions only.

Does the 2SK1155-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK1155-E includes an integral body diode between source and drain. Its forward voltage is 0.95 V at 5 A and 0 V gate bias, with reverse recovery time (t_rr) of 300 ns under di/dt = 100 A/µs. This diode enables freewheeling in buck and flyback topologies but is not optimized for synchronous rectification; the 2SK1155-E's t_rr and Q_rr values are specified for use in non-synchronous configurations.

What thermal resistance does the 2SK1155-E exhibit from channel to case?

The 2SK1155-E has a channel-to-case thermal resistance (θ_ch–c) of 2.50°C/W when mounted to a heatsink with proper interface material and torque. This value applies at T_C = 25°C and assumes full flange contact. Derating is required above 25°C ambient; the 2SK1155-E's maximum channel temperature remains 150°C regardless of case temperature, per its Absolute Maximum Ratings table.

Can the 2SK1155-E be used in avalanche mode?

No, the 2SK1155-E is not rated for repetitive avalanche operation. Its Safe Operating Area (SOA) chart and Absolute Maximum Ratings do not specify avalanche energy (E_AS) or single-pulse avalanche capability. The device relies on external clamping or snubbers for inductive switching protection. Using the 2SK1155-E beyond its V_DSS rating - even briefly - may cause irreversible failure.

How does the 2SK1155-E's R_DS(on) vary with temperature and current?

The 2SK1155-E's R_DS(on) increases with junction temperature - approximately doubling from 25°C to 125°C - and rises slightly with drain current due to channel modulation. At I_D = 5 A and V_GS = 10 V, R_DS(on) is typically 1.2 Ω at 25°C but reaches ~2.3 Ω at 125°C. This positive temperature coefficient aids current sharing in parallel configurations and is documented in the "R_DS(on) vs. Temperature" graph on page 4 of the 2SK1155-E datasheet.