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Renesas 2SK1157-E
- Part No.:
- 2SK1157-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1157-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:339
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Product details
Overview
2SK1157-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-220AB package, designed for high-speed switching applications requiring low on-resistance (0.6–0.8 Ω), fast turn-on delay (15 ns), and robust 450 V drain-source breakdown voltage. It delivers 7 A continuous drain current and supports DC-DC converters, motor drivers, and switching regulators.
For engineers reviewing the 2SK1157-E datasheet, 2SK1157-E pinout, 2SK1157-E application, or 2SK1157-E equivalent, this page provides verified electrical parameters, thermal derating behavior, gate charge characteristics, safe operating area limits, and validated alternative parts for industrial power conversion designs.
Technical Context
The 2SK1157-E employs a planar vertical DMOS structure optimized for low RDS(on) and minimized output capacitance (Coss = 280 pF). Its gate threshold voltage (VGS(off) = 2.0–3.0 V) enables reliable enhancement-mode operation with standard 10 V gate drive.
Designed for hard-switching topologies, it features no secondary breakdown limitation, reverse recovery time (trr = 320 ns) specified under 100 A/µs di/dt, and transient thermal impedance data supporting accurate junction temperature estimation in pulsed-load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - Maximum blocking voltage before avalanche conduction; sets upper limit for flyback snubber and bus voltage selection. |
| RDS(on) | 0.6–0.8 Ω @ ID = 4 A, VGS = 10 V - Directly determines conduction loss and heatsink sizing in continuous-current operation. |
| td(on)/tr/td(off)/tf | 15/55/95/40 ns - Defines minimum achievable switching frequency and gate driver strength requirements (e.g., peak IG ≥ 1.5 A). |
| Ciss/Coss/Crss | 1050/280/40 pF @ VDS = 10 V - Governs Miller effect, gate drive energy (Qg ≈ 40 nC), and EMI generation during transitions. |
| Pch | 60 W @ TC = 25°C - Thermal limit at case; derates linearly to zero at 150°C channel temperature per published curve. |
| ID(pulse) | 28 A @ PW ≤ 10 µs, duty ≤ 1% - Enables short-duration overload tolerance in motor stall or inrush current events. |
| VDF | 0.95 V @ IF = 7 A - Forward voltage of integrated body diode; impacts synchronous rectification efficiency and freewheeling losses. |
Pinout & Package
2SK1157-E uses the TO-220AB package (RENESAS code PRSS0004AC-A), with electrically isolated flange (Drain-connected) and standard 3-terminal layout. Mounting requires thermal interface material and mechanical torque control (0.5–0.7 N·m) to ensure reliable heat transfer without cracking the mold compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; high input impedance (IGSS ≤ ±10 µA) minimizes driver power consumption. |
| 2 (Drain) | High-side power terminal | Connected to flange; must be electrically isolated from heatsink unless circuit topology explicitly references Drain to ground; handles full load current and blocking voltage. |
| 3 (Source) | Power return / reference node | Serves as common reference for gate drive and current sensing; low-inductance layout critical to suppress VGS ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe operation across full SOA without derating for pulse width or voltage/current combinations-critical for unclamped inductive switching. |
| Low drive current requirement | Gate charge Qg ≈ 40 nC allows use of low-power gate drivers (e.g., TC4420) without external push-pull stages in <100 kHz applications. |
| Integrated body diode | Rated for 7 A continuous reverse current (IDR) and 320 ns reverse recovery-supports freewheeling in buck, flyback, and half-bridge topologies without external diode. |
| High-speed switching | Combined td(off) + tf = 135 ns enables efficient operation up to 500 kHz in resonant or ZVS-assisted converters. |
| Stable RDS(on) vs. temperature | RDS(on) increases only ~1.8× from 25°C to 125°C (per graph, 0.8 Ω → ~1.4 Ω), simplifying thermal design versus devices with steeper positive TC. |
Applications
| Switching Regulator | DC-DC Converter |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output non-isolated buck converter delivering 35 W. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; operates at 250 kHz with 30% duty cycle. Use Value: Low RDS(on) reduces conduction loss to <0.5 W; fast switching minimizes dead-time losses and improves light-load efficiency. |
Use Scenario: Synchronous rectifier in isolated forward converter for telecom power supply. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; driven complementary to primary MOSFET with precise timing control. Use Value: Body diode VDF = 0.95 V and low RDS(on) cut rectifier losses by >40% versus 40 V Schottky, improving full-load efficiency from 88% to 91.5%. |
| Motor Driver | Industrial Power Supply |
|
Use Scenario: Half-bridge leg driving 24 V, 5 A brushed DC motor in automated conveyor system. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; commutated at 10 kHz PWM with 100 ns dead time. Use Value: 28 A pulse rating absorbs motor stall currents; no secondary breakdown prevents failure during rapid direction reversal under load. |
Use Scenario: Main switch in 300 W AC-DC PFC boost stage operating at 65 kHz. IC Role / Device Role / Timing Role: Fast-switching boost switch handling 1.2 A RMS input current and 400 V DC link voltage. Use Value: Coss = 280 pF and low Qg reduce switching loss to 1.8 W at full load-enabling passive cooling in enclosed cabinet. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK60ZFP | 600 V VDSS, 3.5 Ω RDS(on), TO-220FP package (isolated tab) | Higher voltage rating but higher on-resistance; better suited for universal-input offline SMPS (>500 V bus) | Select when higher blocking voltage is required and lower conduction loss is acceptable; verify thermal interface due to FP variant's reduced copper exposure. |
| IRFIB730PBF | 400 V VDSS, 0.8 Ω RDS(on), TO-220AB package, 100 ns td(off) | Near-identical RDS(on) and package; slightly slower turn-off and lower VDSS margin | Drop-in replacement where 400 V rating suffices and existing PCB layout must be preserved; confirm SOA compliance at 125°C ambient. |
Compared with STP4NK60ZFP and IRFIB730PBF, the 2SK1157-E offers superior combination of 450 V rating, sub-0.8 Ω on-resistance, and 95 ns turn-off delay-making it optimal for 380–420 V DC bus industrial converters where efficiency and thermal headroom are prioritized over maximum voltage margin.
Availability
2SK1157-E is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and motor drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM production.
Supply support for 2SK1157-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.
The 2SK1157-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for high-reliability industrial power conversion where ruggedness, predictable SOA, and consistent parametric stability across temperature are mandatory.
FAQ
What is the maximum continuous drain current rating for the 2SK1157-E at 100°C case temperature?
The 2SK1157-E has a continuous drain current rating of 7 A at TC = 25°C, derating linearly to approximately 4.2 A at TC = 100°C per the published power vs. temperature curve. This value assumes proper heatsinking and adherence to the SOA boundary defined in the datasheet's "Maximum Safe Operation Area" plot on page 3.
Does the 2SK1157-E have a built-in body diode, and what are its key ratings?
Yes, the 2SK1157-E integrates a body diode rated for 7 A continuous reverse current (IDR) and 0.95 V forward voltage (VDF) at IF = 7 A. Its reverse recovery time is 320 ns under 100 A/µs di/dt conditions, making it suitable for freewheeling in hard-switched topologies without external diode supplementation.
Can the 2SK1157-E be used in place of the 2SK1158-E, and what are the critical differences?
No-the 2SK1157-E and 2SK1158-E are distinct variants: the 2SK1157-E has 450 V VDSS and 0.6–0.8 Ω RDS(on), while the 2SK1158-E specifies 500 V VDSS and 0.7–0.9 Ω RDS(on). Substituting 2SK1157-E for 2SK1158-E risks avalanche failure above 450 V; substituting vice versa increases conduction loss and thermal stress at identical current levels.
What is the gate threshold voltage range for the 2SK1157-E, and how does it affect drive circuit design?
The 2SK1157-E has a gate-to-source cutoff voltage (VGS(off)) of 2.0–3.0 V, confirming enhancement-mode operation. To ensure full enhancement and minimal RDS(on), gate drive must exceed 10 V (typical test condition); logic-level 5 V drives will not fully turn on the device and must be avoided in power-switching roles.
Is the TO-220AB package of the 2SK1157-E electrically isolated, and how should the flange be handled in layout?
No-the TO-220AB package used by the 2SK1157-E connects the Drain terminal directly to the metal flange. The flange must be electrically isolated from the heatsink using mica or polymer insulator kits unless the circuit topology explicitly references Drain as the system ground or high-side reference point.
2SK1157-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1157-E FAQ
1.How can I place an order for 2SK1157-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1157-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1157-E reliable?
The price and inventory of 2SK1157-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1157-E is usually 5 days.
3.What payment methods are accepted for 2SK1157-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1157-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1157-E?
2SK1157-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1157-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1157-E?
For technical support, including 2SK1157-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1157-E requirements.
6.How does Aetrix verify that 2SK1157-E is sourced from the original manufacturer or authorized distributors?
All 2SK1157-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1157-E meets industry standards.
7.What is the process for return or replacement of 2SK1157-E?
All 2SK1157-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1157-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1157-E part is unused and in its original packaging.
Return procedure for 2SK1157-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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