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Renesas 2SK1160-E
- Part No.:
- 2SK1160-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1160-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:393
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Product details
Overview
2SK1160-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, switching regulators, and motor drivers. It features 500 V drain-to-source breakdown voltage, 0.60 Ω typical RDS(on) at 4 A/10 V, 8 A continuous drain current, and TO-220AB package with isolated flange for thermal management.
For engineers reviewing the 2SK1160-E datasheet, 2SK1160-E pinout, 2SK1160-E application, or 2SK1160-E equivalent, this page delivers verified electrical parameters, validated terminal roles, confirmed thermal derating behavior, and real-world switching performance data - all specific to the 2SK1160-E variant.
Technical Context
This device operates as a unidirectional high-voltage power switch with no secondary breakdown limitation, enabling robust hard-switching operation. Its gate threshold voltage (2.0–3.0 V) and low input capacitance (1150 pF Ciss) support efficient drive with standard logic-level gate drivers.
Designed for linear and saturated-mode switching, it delivers 17 ns turn-on delay and 100 ns turn-off delay under 4 A/10 V gate drive into 7.5 Ω load. The integrated body diode exhibits 0.9 V forward voltage at 8 A and 350 ns reverse recovery time, suitable for freewheeling in non-synchronous topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - supports primary-side switching in offline SMPS up to 380 V DC bus with margin |
| RDS(on) | 0.60 Ω typ. - enables <1.9 W conduction loss at 4 A, reducing heatsink requirements |
| ID | 8 A continuous - rated for sustained output in 100–200 W power stages |
| td(off) | 100 ns - limits switching loss during hard-commutation at ≤500 kHz |
| Ciss | 1150 pF - determines gate drive energy requirement (~5.8 µC at 10 V) |
| Tch | 150 °C - defines maximum junction temperature for reliability-critical thermal design |
| VGS(off) | 2.0–3.0 V - ensures stable enhancement-mode operation with TTL/CMOS-compatible gate control |
Pinout & Package
Package: TO-220AB (RENESAS code PRSS0004AC-A), thermally isolated flange, 3-terminal through-hole mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; requires ≤±30 V rating and drives 1150 pF input capacitance |
| 2 (D) | Drain | High-voltage power output node; electrically connected to flange for heatsinking |
| 3 (S) | Source | Power return path; referenced to gate drive ground; carries full load current |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe operation in linear region without SOA derating constraints |
| Low RDS(on) | 0.60 Ω typ. reduces conduction loss and thermal stress in high-current DC-DC stages |
| High-speed switching | 17 ns td(on)/100 ns td(off) supports efficient operation up to 500 kHz |
| Low drive current | 1150 pF Ciss allows use with low-power gate drivers like TC4420 or UCC3732x |
| Body diode with fast trr | 350 ns reverse recovery enables freewheeling in non-synchronous buck converters |
Applications
| Switching Regulator | DC-DC Converter |
|---|---|
Use Scenario: Primary-side switch in 36–48 V input offline flyback or forward converter delivering 24 V/3 A output. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via PWM duty cycle modulation. Use Value: 500 V VDSS provides margin against reflected transients; 0.60 Ω RDS(on) keeps conduction loss below 10 W at full load. | Use Scenario: Step-down converter in industrial PLC power supply converting 48 V to 12 V at 5 A. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in non-isolated buck topology operating at 250 kHz. Use Value: Fast 100 ns td(off) minimizes dead-time losses; body diode VF = 0.9 V reduces freewheeling voltage drop. |
| Motor Driver | AC Motor Control |
Use Scenario: Half-bridge high-side switch driving 24 V brushed DC motor in automated valve actuator. IC Role / Device Role / Timing Role: Unidirectional power switch enabling bidirectional motor control via H-bridge configuration. Use Value: 8 A ID rating supports 3× stall current surges; TO-220AB flange enables direct heatsink mounting. | Use Scenario: Inverter leg switch in single-phase AC induction motor drive (230 V RMS input). IC Role / Device Role / Timing Role: High-voltage switching element in inverter bridge handling line-referenced AC waveforms. Use Value: 150 °C Tch and 60 W Pch allow continuous operation under 60 °C ambient with forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V VDSS, 0.95 Ω RDS(on), TO-220FP package (non-isolated flange) | Higher RDS(on) increases conduction loss; non-isolated flange requires insulating washer | Select when cost sensitivity outweighs thermal efficiency; verify isolation requirements |
| IRF840APBF | 500 V VDSS, 0.85 Ω RDS(on), TO-220AB package, 140 ns td(off) | Slower switching increases dynamic loss above 200 kHz; same mechanical footprint | Prefer for lower-frequency (<150 kHz), higher-voltage margin designs where gate drive simplicity is critical |
Compared with STP5NK50ZFP and IRF840APBF, the 2SK1160-E offers the lowest RDS(on) and fastest td(off) in TO-220AB, making it optimal for thermally constrained, medium-frequency power stages requiring minimal gate drive energy.
Availability
2SK1160-E is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and motor drivers requiring stable component supply across industrial automation, power tool, and embedded control programs.
Supply support for 2SK1160-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SK1160-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for high-reliability, high-voltage switching in industrial power conversion systems where ruggedness and thermal stability are essential.
FAQ
What is the maximum continuous drain current rating for the 2SK1160-E?
The 2SK1160-E has a maximum continuous drain current (ID) of 8 A at TC = 25°C. This rating assumes proper heatsinking and derates linearly to zero at 150°C channel temperature. At 100°C case temperature, the usable ID drops to approximately 4.5 A per the published thermal derating curve on page 3 of the datasheet.
Does the 2SK1160-E have an integrated body diode, and what are its key characteristics?
Yes, the 2SK1160-E includes an integrated body diode with 0.9 V forward voltage at 8 A and 350 ns reverse recovery time (trr) under specified test conditions (diF/dt = 100 A/µs). This diode supports freewheeling in non-synchronous topologies but is not optimized for synchronous rectification due to its relatively slow recovery.
What is the gate-to-source voltage limit for the 2SK1160-E, and why is it important?
The 2SK1160-E specifies ±30 V as the absolute maximum gate-to-source voltage (VGSS). Exceeding this can permanently damage the gate oxide. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) and avoid ringing or overshoot, especially in high-dV/dt environments common in hard-switched power supplies.
Can the 2SK1160-E be used in linear (active) mode, and what limits its safe operating area?
Yes - the 2SK1160-E is explicitly characterized for linear operation and features "no secondary breakdown," meaning its Safe Operating Area (SOA) is limited only by thermal constraints and RDS(on), not by avalanche or snapback failure. The published SOA curve on page 3 confirms stable operation up to 100 V/1 A with 10 ms pulse width.
What is the thermal resistance from channel to case (θch–c) for the 2SK1160-E, and how does it affect heatsink selection?
The 2SK1160-E has a channel-to-case thermal resistance (θch–c) of 2.08°C/W, measured under standard test conditions. When combined with a heatsink's θca, this value determines total thermal resistance and thus allowable power dissipation. For example, with a 1.5°C/W heatsink and 25°C ambient, max continuous Pch ≈ (150 − 25) / (2.08 + 1.5) ≈ 35 W.
2SK1160-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1160-E FAQ
1.How can I place an order for 2SK1160-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1160-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1160-E reliable?
The price and inventory of 2SK1160-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1160-E is usually 5 days.
3.What payment methods are accepted for 2SK1160-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1160-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1160-E?
2SK1160-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1160-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1160-E?
For technical support, including 2SK1160-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1160-E requirements.
6.How does Aetrix verify that 2SK1160-E is sourced from the original manufacturer or authorized distributors?
All 2SK1160-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1160-E meets industry standards.
7.What is the process for return or replacement of 2SK1160-E?
All 2SK1160-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1160-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1160-E part is unused and in its original packaging.
Return procedure for 2SK1160-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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