Renesas 2SK1165-E

Overview

2SK1165-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-3P package, designed for high-speed switching in DC-DC converters and switching regulators. It features 450 V drain-to-source breakdown voltage, 12 A continuous drain current, 0.40–0.55 Ω R_DS(on) at V_GS = 10 V, 1450 pF input capacitance, and 120 ns turn-off delay time.

For engineers reviewing the 2SK1165-E datasheet, 2SK1165-E pinout, 2SK1165-E application, or 2SK1165-E equivalent, this device is selected for high-voltage, medium-current power switching where low conduction loss, fast switching, and robust thermal performance are required in industrial and computing power supplies.

Technical Context

The 2SK1165-E employs a vertical DMOS structure optimized for hard-switching operation in non-isolated topologies. Its gate threshold voltage (2.0–3.0 V) enables direct drive from standard logic-level controllers, while its absence of secondary breakdown supports reliable operation under transient overloads.

Thermal design is enabled by its TO-3P metal package with flanged drain terminal, offering 1.25°C/W channel-to-case thermal resistance. The integrated body diode exhibits 1.0 V forward voltage at 12 A and 450 ns reverse recovery time-critical for synchronous rectification and freewheeling paths.

Key Specifications

Pinout & Package

Package: TO-3P (RENESAS code PRSS0004ZE-A), metal-flanged, isolated case, screw-mountable. Drain connected directly to flange for low-inductance, high-current path and thermal conduction to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP12NK45Z and IXTH12N45P, the 2SK1165-E offers superior thermal management via its TO-3P flange, tighter R_DS(on) tolerance, and faster switching-making it optimal for high-reliability, thermally constrained 400 V power stages where layout and cooling are fixed.

Availability

2SK1165-E is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for 2SK1165-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.

The 2SK1165-E belongs to Renesas' legacy high-voltage power MOSFET family, engineered specifically for efficiency-critical, high-reliability switching regulator and DC-DC converter applications in computing and infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK1165-E?

The 2SK1165-E is rated for 12 A continuous drain current (I_D) at T_C = 25°C. Derating applies above 25°C case temperature per the published thermal curve-e.g., ~8 A at T_C = 100°C. This rating assumes proper heatsinking via the flanged TO-3P package and adherence to the Safe Operating Area (SOA) limits shown in the datasheet.

Does the 2SK1165-E have built-in gate protection?

The 2SK1165-E does not integrate gate Zener protection. Its absolute maximum gate-to-source voltage is ±30 V, and gate leakage remains ≤±10 µA at ±25 V. External gate protection-such as a 15–18 V Zener clamp-is recommended in noisy or high-dv/dt environments to prevent gate oxide damage during transient events.

Can the 2SK1165-E be used in linear mode operation?

Yes, the 2SK1165-E supports linear (ohmic) mode operation due to its absence of secondary breakdown and well-defined SOA curve. It is used in electronic loads and adjustable current sinks, provided channel dissipation stays within the derated P_ch limit and case temperature remains ≤150°C with adequate heatsinking.

What is the typical gate charge requirement for the 2SK1165-E?

While the datasheet does not list Q_g explicitly, the 2SK1165-E's C_iss = 1450 pF, C_oss = 410 pF, and Crss = 55 pF indicate a total gate charge of approximately 90–110 nC at V_GS = 10 V. This value aligns with measured switching waveforms and supports selection of gate drivers capable of sourcing/sinking ≥2 A peak current.

Is the 2SK1165-E RoHS compliant?

Yes, the 2SK1165-E meets the EU RoHS Directive requirements. Renesas confirms RoHS compliance for this part in its official product documentation and environmental declarations, with lead-free finish and halogen-free molding compound consistent with Rev.2.00 (2005) and later manufacturing lots.