Renesas 2SK1283-AZ

Overview

2SK1283-AZ from Renesas Electronics is an N-channel power MOSFET designed for switching applications in solenoid, motor, and lamp driver circuits. It features R_DS(on) = 0.18 Ω max at V_GS = 10 V and I_D = 2 A, 60 V drain-to-source voltage rating, ±3.0 A DC drain current, built-in gate-source ESD protection diode, and TO-220AB package with finned drain tab.

For engineers reviewing the 2SK1283-AZ datasheet, 2SK1283-AZ pinout, 2SK1283-AZ application, or 2SK1283-AZ equivalent, key selection considerations include its low on-resistance at 4 V gate drive (0.24 Ω max), 500 pF typical input capacitance, 13 nC total gate charge, and suitability for industrial-grade switching loads requiring stable thermal performance up to 150°C channel temperature.

Technical Context

The 2SK1283-AZ operates as a voltage-controlled unipolar switch with enhancement-mode N-channel topology. Its gate threshold voltage range (1.0–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the integrated G-S protection diode mitigates electrostatic discharge risks during handling and PCB assembly.

Thermal design is constrained by its 6.25 °C/W junction-to-case thermal resistance and low 1.3 W power dissipation at ambient temperature, necessitating heatsinking when operating above ~0.5 A continuous drain current. Switching performance is characterized by 40 ns turn-on delay, 100 ns rise time, and 550 ns turn-off delay under standard test conditions (V_DD = 30 V, I_D = 2 A, R_G = 10 Ω).

Key Specifications

Pinout & Package

2SK1283-AZ is housed in a TO-220AB package with isolated finned drain tab (Pin 4), enabling direct mechanical mounting to heatsinks. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IRFZ44NPBF, the 2SK1283-AZ offers balanced trade-offs: sufficient 60 V rating and 0.18 Ω on-resistance for 3 A loads, integrated gate protection simplifying layout, and proven reliability in industrial solenoid/motor driver roles without over-engineering.

Availability

2SK1283-AZ is available at Aetrix Electronics and suitable for solenoid actuation, DC motor control, and resistive lamp switching applications requiring stable component supply, long-lifecycle support, and industrial-grade reliability.

Supply support for 2SK1283-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK1283-AZ belongs to Renesas' legacy power MOSFET product line targeting industrial switching applications-designed for robustness in solenoid, motor, and lamp driver circuits where reliability, thermal stability, and gate-drive simplicity are prioritized over ultra-low R_DS(on).

FAQ

What is the gate threshold voltage range for the 2SK1283-AZ?

The 2SK1283-AZ has a gate-to-source cutoff voltage (V_GS(off)) ranging from 1.0 V to 2.5 V at V_DS = 10 V and I_D = 1 mA. This means the device begins conducting significantly within that range, and full enhancement occurs at V_GS ≥ 4 V. Designers should ensure gate drive exceeds 2.5 V for consistent turn-on across temperature and unit variation; the 2SK1283-AZ remains fully enhanced up to its ±20 V gate rating.

Does the 2SK1283-AZ have a built-in body diode, and what are its characteristics?

Yes, the 2SK1283-AZ includes an intrinsic body diode between source and drain. Its forward voltage (V_SD) is 0.9 V at I_SD = 3 A and V_GS = 0 V, and reverse recovery time (t_rr) is 140 ns with Q_rr = 700 nC under specified test conditions. This diode enables freewheeling in inductive loads like solenoids and motors, eliminating the need for an external flyback diode in many low-frequency switching applications using the 2SK1283-AZ.

Can the 2SK1283-AZ be driven directly by a 3.3 V microcontroller GPIO?

The 2SK1283-AZ can be partially enhanced at 3.3 V gate drive but is not guaranteed to achieve its specified R_DS(on) of 0.24 Ω max. At V_GS = 4 V, R_DS(on) is 0.24 Ω max; at 3.3 V, conduction resistance increases significantly and varies across units and temperature. For reliable low-loss switching, a gate driver or level shifter is recommended. The 2SK1283-AZ's low gate charge (13 nC) makes it compatible with compact driver ICs in space-constrained designs.

What is the thermal resistance from junction to case (R_θJC) for the 2SK1283-AZ?

The 2SK1283-AZ has a junction-to-case thermal resistance (R_θJC) of 6.25 °C/W, measured from channel to the metal drain fin. This value assumes proper mechanical mounting with thermal interface material and adequate heatsink mass. Since its total power dissipation at ambient temperature (P_T2) is only 1.3 W, effective heatsinking is essential for continuous operation above ~0.5 A. The 2SK1283-AZ's R_θJC enables predictable thermal modeling when used with standard TO-220 heatsinks.

Is the 2SK1283-AZ RoHS compliant and lead-free?

Yes, the 2SK1283-AZ is RoHS compliant and lead-free. Renesas Electronics confirms compliance with the EU RoHS Directive (2011/65/EU) for this part, as documented in official product change notices and material declarations. The "-AZ" suffix denotes the lead-free, RoHS-compliant version per Renesas' packaging nomenclature. No exemptions apply, and all homogeneous materials meet the 0.1 wt% threshold for restricted substances including lead, cadmium, mercury, hexavalent chromium, PBB, and PBDE.