Renesas 2SK1286-AZ
- Part No.:
- 2SK1286-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1286-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:14,033
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SK1286-AZ from Renesas Electronics is an N-channel enhancement-mode vertical power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits. It features a drain-source voltage rating of 500 V, continuous drain current of 4 A at Tc = 25°C, and on-resistance of 1.2 Ω (max) at VGS = 10 V.
For engineers reviewing the 2SK1286-AZ datasheet, 2SK1286-AZ pinout, 2SK1286-AZ application, or 2SK1286-AZ equivalent, key selection criteria include its 500 V blocking capability, 4 A thermal-current handling, TO-220AB package mounting, and suitability for flyback and forward converter primary-side switches.
Technical Context
This MOSFET employs a planar vertical structure with optimized gate oxide thickness and drift region doping to achieve stable avalanche ruggedness and low gate charge (Qg = 12 nC typ). Its threshold voltage range of 2.0–4.0 V ensures reliable turn-on with standard 5 V or 15 V gate drivers.
The device is rated for repetitive avalanche energy (EAS = 110 mJ) and specified for operation up to Tj = 150°C, supporting compact heatsink designs in industrial power supplies where thermal margin is constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - supports primary-side switching in offline 230 VAC-derived SMPS with ≥2× safety margin |
| ID (continuous) | 4 A at Tc = 25°C - enables use in <100 W isolated DC-DC converters without forced air |
| RDS(on) | 1.2 Ω (max) at VGS = 10 V - limits conduction loss to ≤19.2 mW at 4 A, critical for efficiency in 50–100 kHz topologies |
| Qg | 12 nC (typ) - reduces gate drive power requirement and enables fast 100 ns turn-off in hard-switched applications |
| EAS | 110 mJ (typ) - allows safe single-pulse avalanche operation during transformer reset or load dump transients |
| Tj max | 150°C - permits operation in sealed enclosures with ambient up to 70°C using standard TO-220 heatsinking |
Pinout & Package
2SK1286-AZ is housed in a TO-220AB plastic package with insulated tab, featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology requires common-Drain configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main current-carrying terminal, high-voltage node | Electrically tied to internal drain region; requires insulating washer when mounted to grounded heatsink |
| Pin 1 (Source) | Reference node for gate drive and current return path | Serves as local ground reference for gate driver IC; connects directly to source trace with minimal inductance |
| Pin 2 (Gate) | Control electrode for channel formation | Requires 10 V min for full enhancement; gate resistor value selected to balance switching speed vs. ringing (typically 10–47 Ω) |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche capability | Rated for unlimited repetitive avalanche events under specified conditions - eliminates need for external clamping in flyback snubberless designs |
| Low gate charge | 12 nC typical - reduces gate driver power dissipation and enables use with low-power PWM controllers like UC384x series |
| Enhancement-mode operation | Threshold voltage 2.0–4.0 V - ensures natural off-state at 0 V gate bias, simplifying gate drive sequencing in multi-MOSFET systems |
| TO-220AB insulation | Isolated tab rated to 2500 VRMS - permits direct mounting to grounded heatsinks without additional isolation hardware |
Applications
| Switch-Mode Power Supply | Motor Drive Control |
|---|---|
Use Scenario: Primary-side switch in 65–100 W AC-DC adapters and industrial auxiliary power supplies. IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM) flyback topology. Use Value: 500 V rating accommodates reflected output voltage plus leakage spike margin; 1.2 Ω RDS(on) keeps conduction loss below 2% at full load. | Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge drivers for factory automation actuators. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path in half-bridge leg. Use Value: 4 A continuous rating supports 3 A RMS motor current with 33% duty cycle headroom; TO-220AB mechanical robustness withstands vibration in mobile equipment. |
| LED Driver Circuit | Industrial Solenoid Control |
Use Scenario: Constant-current switch in isolated LED streetlight drivers operating from 277 VAC mains. IC Role / Device Role / Timing Role: Primary-side current regulator in buck-boost derived constant-current topology. Use Value: Avalanche ruggedness handles inductive kickback from transformer-coupled current sense; 150°C junction rating sustains reliability in outdoor-rated enclosures. | Use Scenario: High-side driver for 12/24 V DC solenoids in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Fast-turning switch enabling precise pulse-width modulated force control. Use Value: 12 nC Qg allows sub-1 μs turn-off - critical for solenoid release timing accuracy in safety-critical valve actuation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.05 Ω (max), DPAK package | Surface-mount alternative with lower RDS(on) but no insulated tab - requires PCB-level isolation | Preferred for space-constrained SMT designs where heatsink isolation can be implemented via thermal pad cutouts |
| IRFBC40APBF | 600 V, 3.7 A, RDS(on) = 1.4 Ω (max), TO-220AB package | Higher voltage rating but lower current and higher on-resistance - trades conduction loss for surge margin | Selected when input surge immunity >600 V is required, such as in utility meter front-end protection stages |
Compared with STP5NK50ZFP and IRFBC40APBF, the 2SK1286-AZ offers a balanced combination of TO-220AB mechanical robustness, built-in drain-tab isolation, and 500 V/4 A ratings ideal for cost-sensitive industrial power supplies requiring through-hole assembly and simplified thermal management.
Availability
2SK1286-AZ is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drive control circuits, LED driver circuits, and industrial solenoid control systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for 2SK1286-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The 2SK1286-AZ belongs to Renesas' legacy discrete power MOSFET product line, developed for cost-effective, high-reliability switching in industrial power conversion and motion control applications.
FAQ
What is the maximum junction temperature specification for the 2SK1286-AZ?
The 2SK1286-AZ has a maximum rated junction temperature (Tj) of 150°C. This rating is defined under steady-state thermal conditions with proper heatsinking and accounts for both conduction and switching losses. Operation beyond this limit risks permanent degradation of the silicon die and bond wires. Derating curves in the official Renesas datasheet must be applied when ambient temperature exceeds 70°C or airflow is restricted.
Does the 2SK1286-AZ have built-in gate protection diodes?
No, the 2SK1286-AZ does not integrate gate protection diodes. Its gate oxide is rated for ±20 V maximum gate-source voltage, and transient overvoltage exceeding this-such as from ESD or inductive coupling-can cause irreversible gate oxide breakdown. External Zener clamping (e.g., 15 V TVS between gate and source) is strongly recommended in all production designs using the 2SK1286-AZ.
Can the 2SK1286-AZ be used in synchronous rectification applications?
The 2SK1286-AZ is not optimized for synchronous rectification due to its relatively high RDS(on) (1.2 Ω) and lack of body diode optimization for reverse recovery. Its body diode exhibits slow recovery (trr ≈ 250 ns), making it unsuitable for high-frequency secondary-side rectification. For synchronous rectification, dedicated low-RDS(on), fast-recovery MOSFETs like the SiR872DP should be used instead of the 2SK1286-AZ.
What is the gate threshold voltage range for the 2SK1286-AZ?
The gate threshold voltage (VGS(th)) for the 2SK1286-AZ is specified as 2.0 V minimum to 4.0 V maximum at ID = 1 mA. This range ensures consistent turn-on behavior across process variation while maintaining sufficient noise margin against false triggering. Full enhancement occurs at VGS ≥ 10 V, where RDS(on) reaches its rated 1.2 Ω maximum.
Is the 2SK1286-AZ RoHS compliant?
Yes, the 2SK1286-AZ is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas Electronics' material declarations. It contains lead-free terminations and complies with maximum concentration values for Cd, Pb, Hg, Cr(VI), PBB, and PBDE. The "-AZ" suffix denotes the RoHS-compliant version; non-compliant variants (e.g., 2SK1286) were discontinued after April 2006.
2SK1286-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1286-AZ FAQ
1.How can I place an order for 2SK1286-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1286-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1286-AZ reliable?
The price and inventory of 2SK1286-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1286-AZ is usually 5 days.
3.What payment methods are accepted for 2SK1286-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1286-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1286-AZ?
2SK1286-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1286-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1286-AZ?
For technical support, including 2SK1286-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1286-AZ requirements.
6.How does Aetrix verify that 2SK1286-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK1286-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1286-AZ meets industry standards.
7.What is the process for return or replacement of 2SK1286-AZ?
All 2SK1286-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1286-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1286-AZ part is unused and in its original packaging.
Return procedure for 2SK1286-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SK1286-AZ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

