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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK1313-01L-E

Name: 2SK1313-01L-E
Brand: Renesas
SKU: 2SK1313-01L-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK1313-01L-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK1313-01L-E.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK1313-01L-E from Renesas is a silicon N-channel power MOSFET in LDPAK(L) package, rated for 450 V V_DSS, 5 A continuous drain current, and 1.4 Ω R_DS(on) at V_GS = 10 V, designed for high-speed switching in DC-DC converters and switching regulators.

For engineers reviewing the 2SK1313-01L-E datasheet, 2SK1313-01L-E pinout, 2SK1313-01L-E application, or 2SK1313-01L-E equivalent, key selection criteria include breakdown voltage margin, on-resistance at operating gate drive, body diode recovery time, and thermal resistance in high-power density designs.

Technical Context

This MOSFET employs a planar vertical structure optimized for rugged avalanche capability and absence of secondary breakdown-enabling reliable operation under repetitive inductive switching stress. Its low gate charge (Q_g ≈ 24 nC) and fast switching times (t_d(on) = 10 ns, t_f = 30 ns) support efficient operation above 100 kHz in hard-switched topologies.

The integrated body diode exhibits 0.95 V forward voltage at 5 A and 300 ns reverse recovery time (trr) under di/dt = 100 A/µs, making it suitable for synchronous rectification and freewheeling paths where diode conduction is brief but critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	450 V - Withstands up to 450 V drain-source blocking voltage before avalanche onset
R_DS(on)	1.4 Ω max at V_GS = 10 V, I_D = 2.5 A - Determines conduction loss and junction temperature rise under load
I_D	5 A continuous - Maximum DC drain current at T_C = 25°C with heatsink
t_r/t_f	25 ns / 30 ns - Fast edge transitions reduce switching losses in PWM circuits
trr	300 ns - Body diode recovery time impacts efficiency and EMI in flyback and buck-boost stages
θ_ch–c	2.50 °C/W - Thermal resistance from channel to case enables precise junction temperature estimation
C_iss	640 pF - Input capacitance governs gate drive strength requirements and turn-on speed

Pinout & Package

2SK1313-01L-E uses the LDPAK(L) surface-mount package (RENESAS code PRSS0004AE-A), featuring exposed drain pad for thermal performance and four terminals: Gate (G), Drain (D), Source (S), and second Drain (D) - enabling dual-drain configuration for enhanced current handling and thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ~10 V drive for full enhancement and minimal R_DS(on)
2	Drain	Main high-side power path; electrically tied to exposed metal pad for thermal conduction
3	Source	Reference node for gate drive and current sensing; common return for load current
4	Drain	Second drain connection - paralleled internally or externally to reduce effective R_DS(on) and improve thermal distribution

Key Features

Feature	Design Value
No secondary breakdown	Enables safe operation under SOA-limited inductive switching without derating curves
Low R_DS(on)	1.4 Ω max reduces conduction loss in 24–48 V input DC-DC stages delivering >3 A
High-speed switching	10 ns turn-on delay + 30 ns fall time supports >200 kHz operation with low gate drive loss
Integrated body diode	300 ns trr and 0.95 V V_DF allow use as freewheeling element without external Schottky
LDPAK(L) package	Exposed drain pad and dual-drain terminals provide 2.50 °C/W θ_ch–c for compact thermal design

Applications

Server PSU Primary Switch	Industrial DC-DC Converter
Use Scenario: High-efficiency 48 V input to 12 V output isolated converter in telecom server power supply. IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or LLC resonant topology. Use Value: 450 V rating accommodates reflected voltage spikes; 1.4 Ω R_DS(on) minimizes conduction loss at 5 A peak primary current.	Use Scenario: Non-isolated 24 V to 5 V buck converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300 kHz with integrated body diode freewheeling. Use Value: 300 ns trr prevents cross-conduction loss during dead-time; dual-drain layout improves thermal margin at 70°C ambient.
LED Driver Flyback	Motor Drive Half-Bridge
Use Scenario: Constant-current flyback LED driver for street lighting (input 100–277 VAC). IC Role / Device Role / Timing Role: Main switching FET clamped by RCD snubber, conducting during primary energy transfer phase. Use Value: 450 V V_DSS provides 20% margin over 375 V DC bus; no secondary breakdown ensures reliability across line-voltage transients.	Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for HVAC actuators. IC Role / Device Role / Timing Role: Fast-turning low-side FET controlling PWM duty cycle and direction via complementary drive. Use Value: 10 ns t_d(on) enables precise 1 µs minimum on-time control; 5 A rating supports 3 A RMS motor current with safety margin.

Server PSU Primary Switch

Industrial DC-DC Converter

Use Scenario: High-efficiency 48 V input to 12 V output isolated converter in telecom server power supply.

IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or LLC resonant topology.

Use Value: 450 V rating accommodates reflected voltage spikes; 1.4 Ω R_DS(on) minimizes conduction loss at 5 A peak primary current.

Use Scenario: Non-isolated 24 V to 5 V buck converter powering PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300 kHz with integrated body diode freewheeling.

Use Value: 300 ns trr prevents cross-conduction loss during dead-time; dual-drain layout improves thermal margin at 70°C ambient.

LED Driver Flyback

Motor Drive Half-Bridge

Use Scenario: Constant-current flyback LED driver for street lighting (input 100–277 VAC).

IC Role / Device Role / Timing Role: Main switching FET clamped by RCD snubber, conducting during primary energy transfer phase.

Use Value: 450 V V_DSS provides 20% margin over 375 V DC bus; no secondary breakdown ensures reliability across line-voltage transients.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for HVAC actuators.

IC Role / Device Role / Timing Role: Fast-turning low-side FET controlling PWM duty cycle and direction via complementary drive.

Use Value: 10 ns t_d(on) enables precise 1 µs minimum on-time control; 5 A rating supports 3 A RMS motor current with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SK1314L-E	500 V V_DSS, 1.5 Ω R_DS(on), same LDPAK(L) package and pinout	Higher voltage rating suits 380 V DC bus designs; slightly higher conduction loss at 24–48 V inputs	Select when system requires >450 V blocking margin, especially in PFC front-end or universal-input flyback stages.
ROHM R6004KNX	600 V V_DSS, 4.0 Ω R_DS(on), TO-252 package, 3-pin configuration	Larger footprint and single-drain layout; higher R_DS(on) increases conduction loss but offers wider voltage headroom	Choose when board layout allows TO-252 and 600 V rating is mandatory; not drop-in due to different pin count and thermal interface.

Compared with 2SK1313-01L-E, the 2SK1314L-E offers higher voltage tolerance at minor R_DS(on) cost and identical mounting, while the R6004KNX trades thermal efficiency and pin compatibility for broader voltage coverage in less space-constrained designs.

Availability

2SK1313-01L-E is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, LED drivers, and motor control circuits requiring stable component supply and long-term production continuity.

Supply support for 2SK1313-01L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK1313-01L-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for robust, high-frequency switching in offline and intermediate-bus power conversion systems.

FAQ

What is the maximum continuous drain current rating for the 2SK1313-01L-E?

The 2SK1313-01L-E has a maximum continuous drain current (I_D) of 5 A at case temperature T_C = 25°C with adequate heatsinking. Derating applies above 25°C per the power vs. temperature curve: at T_C = 100°C, usable I_D drops to approximately 2.5 A. This rating assumes proper PCB copper area and thermal vias beneath the exposed drain pad.

Does the 2SK1313-01L-E have a built-in body diode, and what are its key parameters?

Yes, the 2SK1313-01L-E integrates a body diode with forward voltage V_DF = 0.95 V at I_F = 5 A and reverse recovery time t_rr = 300 ns under di/dt = 100 A/µs. This diode is rated for 5 A reverse drain current (I_DR) and enables freewheeling operation without external diodes in buck or flyback topologies.

What is the gate-to-source voltage limit for the 2SK1313-01L-E?

The 2SK1313-01L-E specifies a gate-to-source voltage rating (V_GSS) of ±30 V. Operation beyond ±25 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with typical gate threshold voltage V_GS(off) between 2.0 V and 3.0 V at I_D = 1 mA.

How does the dual-drain configuration (pins 2 and 4) function in the 2SK1313-01L-E?

Pins 2 and 4 of the 2SK1313-01L-E are both internally connected to the drain region and share the same exposed metal pad. This dual-terminal layout reduces effective source inductance and improves current sharing in parallel layouts, while enhancing thermal dissipation by distributing heat across two solder joints on the PCB.

Is the 2SK1313-01L-E suitable for use in automotive applications?

The 2SK1313-01L-E is not qualified to AEC-Q101 or automotive-grade reliability standards. Renesas documentation explicitly states their semiconductors are not designed for life-critical systems such as vehicular or medical equipment. For automotive use, consult Renesas' dedicated automotive MOSFET portfolio or perform full qualification testing per ISO/TS 16949 requirements.

2SK1313-01L-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK1313-01L-E FAQ

1.How can I place an order for 2SK1313-01L-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1313-01L-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1313-01L-E reliable?

The price and inventory of 2SK1313-01L-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1313-01L-E is usually 5 days.

3.What payment methods are accepted for 2SK1313-01L-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1313-01L-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1313-01L-E?

2SK1313-01L-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1313-01L-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1313-01L-E?

For technical support, including 2SK1313-01L-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1313-01L-E requirements.

6.How does Aetrix verify that 2SK1313-01L-E is sourced from the original manufacturer or authorized distributors?

All 2SK1313-01L-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1313-01L-E meets industry standards.

7.What is the process for return or replacement of 2SK1313-01L-E?

All 2SK1313-01L-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1313-01L-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1313-01L-E part is unused and in its original packaging.

Return procedure for 2SK1313-01L-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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