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Renesas 2SK1313S-E
- Part No.:
- 2SK1313S-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1313S-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
2SK1313S-E from Renesas Technology Corp. is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features 450 V drain-to-source breakdown voltage, 1.0 Ω typical RDS(on) at VGS = 10 V, 5 A continuous drain current, and low gate charge enabling efficient gate drive with minimal current. Its LDPAK (S) package supports thermal performance in compact power stages.
For engineers reviewing the 2SK1313S-E datasheet, 2SK1313S-E pinout, 2SK1313S-E application, or 2SK1313S-E equivalent, key selection criteria include verified 450 V blocking capability, sub-1.4 Ω maximum on-resistance at rated current, 300 ns body diode reverse recovery time, and LDPAK (S) mechanical compatibility with surface-mount thermal management requirements.
Technical Context
The 2SK1313S-E operates as a single N-channel enhancement-mode power MOSFET with no secondary breakdown limitation, enabling robust hard-switching operation. Its gate threshold voltage of 2.0–3.0 V ensures reliable turn-on with standard logic-level drivers while maintaining noise immunity.
Designed for unidirectional high-voltage switching, it integrates a fast-recovery body diode (trr = 300 ns, VDF = 0.95 V at 5 A), supporting synchronous rectification and freewheeling paths in flyback and forward topologies without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - Sustains full bridge or boost stage bus voltages up to 400 V DC with margin |
| RDS(on) max | 1.4 Ω at ID = 2.5 A, VGS = 10 V - Limits conduction loss to ≤8.75 W at 2.5 A |
| trr | 300 ns - Enables >300 kHz operation in discontinuous conduction mode (DCM) converters |
| Qg (derived) | ~22 nC (from Ciss = 640 pF, Crss = 20 pF) - Compatible with low-power gate drivers (e.g., TC4420) |
| Pch | 50 W at TC = 25°C - Requires heatsinking for >10 W continuous dissipation |
| VGS(th) | 2.0–3.0 V - Ensures turn-on with 3.3 V or 5 V microcontroller GPIO without level shifting |
Pinout & Package
2SK1313S-E uses the LDPAK (S) surface-mount package (Hitachi code LDPAK-S-(1)), measuring 10.2 × 8.6 mm with 1.3 g mass and optimized thermal pad layout for PCB copper pour attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V drive; 10 µA max leakage at ±25 V ensures low standby power |
| 2 (D) | Drain | Main high-side switching node; connected internally to thermal pad for enhanced heat transfer |
| 3 (S) | Source | Power return reference; tied to driver ground in low-side configurations; defines VGS control path |
| 4 (D) | Drain (redundant) | Second drain connection for parallel current handling and improved thermal spreading across package bottom |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe operation under avalanche and linear-mode stress without SOA derating curves |
| Low drive current requirement | Gate capacitance profile allows full switching with <1 mA peak drive current at 100 kHz |
| High-speed switching | 10 ns turn-on delay + 25 ns rise time supports <50 ns total switching transitions at rated load |
| Integrated body diode | 0.95 V forward drop at 5 A enables self-commutated freewheeling in buck and flyback converters |
Applications
| AC-DC Adapter Power Stage | Industrial DC-DC Isolated Converter |
|---|---|
Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz with quasi-resonant control. IC Role / Device Role / Timing Role: Primary-side switch handling 400 V DC link; synchronized with controller's zero-voltage switching detection. Use Value: 300 ns trr minimizes dead-time losses; 1.4 Ω RDS(on) limits conduction loss to 8.75 W at 2.5 A RMS, enabling 75°C case temperature with 25 cm² copper area. |
Use Scenario: 48 V input to 12 V/10 A isolated forward converter in factory automation PLC power supply. IC Role / Device Role / Timing Role: Main switch in primary H-bridge; driven by transformer-coupled gate driver with 10 V amplitude. Use Value: 450 V VDSS provides 25% margin over 400 V reflected clamp voltage; LDPAK (S) thermal pad reduces junction-to-board resistance to ≤3.5°C/W. |
| LED Driver Flyback Stage | Telecom DC-DC Intermediate Bus Converter |
Use Scenario: Constant-current 36 V/0.7 A LED string driver with primary-side regulation. IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer into coupled inductor; body diode conducts during off-time. Use Value: 0.95 V VDF reduces freewheeling loss by 15% vs. discrete Schottky; 2.0–3.0 V VGS(th) ensures clean turn-on with 3.3 V MCU PWM signal. |
Use Scenario: 380 V DC intermediate bus to 48 V/5 A output using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: One leg of primary-side FET pair; switched at 100 kHz with ZVS-assisted timing. Use Value: 50 W Pch rating supports 15 W conduction + 5 W switching loss at 100 kHz; dual-drain terminals reduce current density in PCB traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP10N50D2 | 500 V VDSS, 1.2 Ω RDS(on), TO-220 package, higher Qg (42 nC) | Requires larger heatsink and gate driver current; not surface-mount compatible | Preferred where higher voltage margin is critical and through-hole assembly is acceptable |
| STP10NK50ZFP | 500 V VDSS, 0.75 Ω RDS(on), TO-220FP package, slower trr (500 ns) | Lower conduction loss but longer diode recovery increases EMI and limits frequency | Selected when efficiency at light load dominates over switching speed constraints |
Compared with IXTP10N50D2 and STP10NK50ZFP, the 2SK1313S-E offers superior surface-mount thermal integration via LDPAK (S), tighter VGS(th) distribution for predictable logic-level drive, and faster body diode recovery-making it optimal for space-constrained, high-frequency DC-DC designs where board area and EMI are critical.
Availability
2SK1313S-E is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply and long-term production continuity.
Supply support for 2SK1313S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor divisions, specializing in microcontrollers, analog, power, and discrete devices.
The 2SK1313S-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliability-critical offline power conversion in industrial and consumer equipment where ruggedness and thermal stability are prioritized.
FAQ
What is the maximum continuous drain current rating for the 2SK1313S-E?
The 2SK1313S-E has a continuous drain current (ID) rating of 5 A at TC = 25°C. This rating assumes proper PCB copper area and thermal management; derating applies above 25°C case temperature per the 50 W channel dissipation limit and published power vs. temperature curve. At 100°C case temperature, usable ID drops to approximately 2.8 A. The 2SK1313S-E must be mounted on ≥25 cm² of 2-oz copper with thermal vias to sustain full-rated current.
Does the 2SK1313S-E have a built-in body diode, and what are its characteristics?
Yes, the 2SK1313S-E integrates a monolithic body diode with a forward voltage (VDF) of 0.95 V at 5 A and reverse recovery time (trr) of 300 ns under specified test conditions (IF = 5 A, diF/dt = 100 A/µs, VGS = 0). This diode is rated for 5 A continuous reverse current and supports freewheeling in flyback, buck, and forward converters without external diode addition. The 2SK1313S-E body diode is not optimized for ultra-fast recovery but balances speed and softness for EMI control.
Is the 2SK1313S-E pin-compatible with other LDPAK variants like 2SK1313L-E?
No-the 2SK1313S-E uses the LDPAK (S)-(1) variant with specific leadframe dimensions (e.g., 3.0 mm source-to-drain spacing), while the 2SK1313L-E uses LDPAK (L) with 4.44 mm spacing and 1.4 g mass. Pin numbering is identical (G-D-S-D), but land pattern, thermal pad size, and mechanical mounting differ. PCB layout must match the exact LDPAK (S) footprint; mixing variants risks solder joint reliability and thermal performance degradation in the 2SK1313S-E.
What gate drive voltage is required to fully enhance the 2SK1313S-E?
The 2SK1313S-E achieves full enhancement at VGS = 10 V, delivering its specified RDS(on) ≤ 1.4 Ω. Gate threshold voltage (VGS(off)) is 2.0–3.0 V, so it turns on with 3.3 V or 5 V logic, but RDS(on) rises significantly below 8 V (e.g., ~3.5 Ω at VGS = 5 V). For low-loss operation, the 2SK1313S-E requires a stable 10 V gate drive referenced to source; gate resistor selection must balance switching speed and ringing given its 20 pF Crss and 640 pF Ciss.
Can the 2SK1313S-E be used in automotive applications?
No-the 2SK1313S-E is not qualified to AEC-Q101 or any automotive reliability standard. Renesas documentation explicitly states their semiconductors are not designed for use in systems where human life is at stake, including automotive, medical, aerospace, or nuclear applications. For automotive-grade alternatives, consult Renesas' RAJ series or contact their automotive division directly; the 2SK1313S-E is intended only for industrial, consumer, and commercial power supplies.
2SK1313S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1313S-E FAQ
1.How can I place an order for 2SK1313S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1313S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1313S-E reliable?
The price and inventory of 2SK1313S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1313S-E is usually 5 days.
3.What payment methods are accepted for 2SK1313S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1313S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1313S-E?
2SK1313S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1313S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1313S-E?
For technical support, including 2SK1313S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1313S-E requirements.
6.How does Aetrix verify that 2SK1313S-E is sourced from the original manufacturer or authorized distributors?
All 2SK1313S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1313S-E meets industry standards.
7.What is the process for return or replacement of 2SK1313S-E?
All 2SK1313S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1313S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1313S-E part is unused and in its original packaging.
Return procedure for 2SK1313S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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