Renesas 2SK1313STR-E

Overview

2SK1313STR-E from Renesas Technology Corp. is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 450 V drain-to-source breakdown voltage, 5 A continuous drain current, 1.0–1.4 Ω on-state resistance at V_GS = 10 V, 640 pF input capacitance, and LDPAK surface-mount package with dual drain terminals.

For engineers reviewing the 2SK1313STR-E datasheet, 2SK1313STR-E pinout, 2SK1313STR-E application, or 2SK1313STR-E equivalent, key selection criteria include its low drive current requirement, absence of secondary breakdown, body diode reverse recovery time of 300 ns, and suitability for high-efficiency offline power supplies operating up to 450 V.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for fast switching and thermal stability. Its gate threshold voltage range (2.0–3.0 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while the 1.0 Ω typical R_DS(on) minimizes conduction loss at 2.5 A drain current.

The device integrates a built-in body diode with 0.95 V forward voltage and 300 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and flyback topologies. Its LDPAK package provides enhanced thermal dissipation (50 W at T_C = 25°C) and low-inductance dual-drain layout for reduced switching ringing.

Key Specifications

Pinout & Package

2SK1313STR-E uses the LDPAK (Leadless Dual Power Package) surface-mount package, measuring 10.2 × 8.6 mm with 1.4 g mass and exposed drain thermal pad. The package features four terminals: Gate (G), Source (S), and two electrically parallel Drain (D) pins for low-inductance, high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP4N50D2 and STP4NK50ZFP, the 2SK1313STR-E delivers lower conduction loss and verified fast body diode performance in a compact surface-mount package-making it optimal for space-constrained, high-frequency switching regulator designs requiring predictable reverse recovery behavior.

Availability

2SK1313STR-E is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for 2SK1313STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Mitsubishi Electric's and Hitachi's semiconductor operations, specializing in microcontrollers, analog, logic, memory, and discrete power devices.

The 2SK1313STR-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for efficiency-critical offline power conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current rating for the 2SK1313STR-E?

The 2SK1313STR-E has a maximum continuous drain current (I_D) of 5 A at T_C = 25°C. This rating assumes proper PCB copper area and thermal vias under the LDPAK drain pads. At elevated case temperatures, derating applies per the 50 W P_ch curve-e.g., I_D drops to ~3.5 A at T_C = 100°C. Always verify junction temperature using R_θJC = 2.5°C/W and actual power dissipation in the 2SK1313STR-E application.

Does the 2SK1313STR-E have a specified gate charge (Q_g) value in its datasheet?

The 2SK1313STR-E datasheet does not list Q_g explicitly, but it provides C_iss = 640 pF, C_oss = 160 pF, and C_rss = 20 pF at V_DS = 10 V, enabling estimation of total gate charge near 25 nC using industry-standard Q_g ≈ 0.8 × C_iss × V_GS. This value aligns with measured t_d(on) = 10 ns and t_r = 25 ns under 10 V drive, confirming suitability for gate drivers capable of sourcing ≥1 A peak current in the 2SK1313STR-E design.

Can the 2SK1313STR-E be used as a direct replacement for the 2SK1313S or 2SK1313L variants?

Yes-the 2SK1313STR-E corresponds to the LDPAK (S) variant per Hitachi's original documentation, sharing identical electrical specifications (V_DSS = 450 V, R_DS(on) = 1.0–1.4 Ω, t_r/t_f = 25/30 ns) and thermal ratings with the 2SK1313S. The "STR-E" suffix denotes tape-and-reel packaging for automated assembly; electrically and mechanically, the 2SK1313STR-E is functionally identical to the 2SK1313S and may be substituted without layout or firmware changes in the 2SK1313STR-E application.

Is the body diode in the 2SK1313STR-E suitable for synchronous rectification?

No-the body diode of the 2SK1313STR-E is not optimized for synchronous rectification due to its 300 ns reverse recovery time and lack of soft-recovery characteristics. It is intended for freewheeling or clamping functions in non-synchronous topologies. For synchronous rectification, a dedicated low-Q_rr, soft-recovery MOSFET such as the SiR626DP should be used instead of relying on the 2SK1313STR-E body diode.

What is the recommended gate resistor value for driving the 2SK1313STR-E in a 250 kHz flyback converter?

A gate resistor of 10–22 Ω is recommended for the 2SK1313STR-E in a 250 kHz flyback converter to balance switching speed and gate ringing. With estimated Q_g ≈ 25 nC and 10 V drive, this yields ~2.5–5.5 A peak gate current-within safe limits for most integrated gate drivers. Lower values increase EMI risk; higher values raise switching losses. Layout-dependent parasitics require empirical tuning, but 15 Ω is a validated starting point for the 2SK1313STR-E in production-grade flyback designs.