Renesas 2SK1315L-E

Overview

2SK1315L-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drivers, featuring 450 V V_DSS, 8 A I_D, 0.55 Ω R_DS(on) at V_GS = 10 V, and 17 ns turn-on delay time. It operates with low drive current and no secondary breakdown, enabling efficient hard-switching in industrial power supplies.

For engineers reviewing the 2SK1315L-E datasheet, 2SK1315L-E pinout, 2SK1315L-E application, or 2SK1315L-E equivalent, key selection criteria include its LDPAK package thermal performance, body diode reverse recovery time (350 ns), gate threshold voltage range (2.0–3.0 V), and suitability for non-isolated flyback and half-bridge topologies requiring robust 450 V blocking capability.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for fast switching with minimal gate charge and low output capacitance (C_oss = 340 pF). Its 0.55 Ω typical on-resistance at 4 A/10 V enables low conduction loss in medium-power SMPS designs up to 150 W.

The integrated body diode exhibits 0.9 V forward voltage at 8 A and 350 ns reverse recovery time under diF/dt = 100 A/µs - critical for synchronous rectification and freewheeling path integrity in buck-derived converters.

Key Specifications

Pinout & Package

2SK1315L-E uses the LDPAK surface-mount package (Hitachi code LDPAK-L), measuring 10.2 × 8.6 mm with 1.4 g mass and optimized copper tab for PCB heat spreading. The package features drain-connected tab for direct thermal coupling to heatsink pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK50ZFP and IXTP12N50L, the 2SK1315L-E delivers superior high-frequency efficiency in surface-mount SMPS due to its optimized LDPAK thermal path, verified 350 ns body diode recovery, and 17 ns turn-on delay - making it the preferred choice for space-constrained, >300 kHz DC-DC converters demanding consistent body diode behavior.

Availability

2SK1315L-E is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor drives, and DC-DC converters requiring stable component supply across extended production lifecycles and temperature ranges from –55°C to +150°C.

Supply support for 2SK1315L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and discrete devices, with roots in Hitachi and NEC semiconductor operations.

The 2SK1315L-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for industrial-grade switching regulators and motor control systems demanding reliability under continuous thermal stress.

FAQ

What is the maximum continuous drain current rating for the 2SK1315L-E?

The 2SK1315L-E has a maximum continuous drain current (I_D) of 8 A at T_C = 25°C. This rating assumes proper PCB copper area for thermal dissipation; derating is required above 25°C case temperature per the 60 W P_ch limit and published power vs. temperature curve. At 100°C case temperature, the usable I_D drops to approximately 4.5 A. Always verify thermal design using the 2SK1315L-E's 1.4 g LDPAK package thermal resistance characteristics.

Does the 2SK1315L-E have a built-in body diode, and what are its key parameters?

Yes, the 2SK1315L-E integrates a body diode between source and drain. Its forward voltage (V_DF) is 0.9 V at 8 A and V_GS = 0, and its reverse recovery time (t_rr) is 350 ns under IF = 8 A and diF/dt = 100 A/µs. These values are measured and specified in the official Renesas datasheet, confirming suitability for freewheeling and synchronous rectification where predictable diode behavior is essential. The 2SK1315L-E body diode is not rated for avalanche operation.

What is the gate-to-source threshold voltage range for the 2SK1315L-E?

The gate-to-source cutoff voltage (V_GS(off)) for the 2SK1315L-E is specified as 2.0–3.0 V at I_D = 1 mA and V_DS = 10 V. This defines the minimum gate voltage required to ensure full turn-off. For reliable enhancement-mode operation, gate drive must exceed 3.0 V to achieve rated R_DS(on), and remain below ±30 V to avoid gate oxide damage. The 2SK1315L-E is not a logic-level MOSFET and requires ≥5 V gate drive for practical switching.

Can the 2SK1315L-E be used in avalanche-rated applications?

No, the 2SK1315L-E is not rated for repetitive avalanche operation. The datasheet does not specify avalanche energy (E_AS) or single-pulse avalanche ratings. Its absolute maximum ratings define safe operating area (SOA) only under clamped inductive switching conditions, and Renesas explicitly cautions against use in applications where unclamped inductive loads could force the device into avalanche breakdown. For such requirements, select a purpose-designed avalanche-rated MOSFET instead of the 2SK1315L-E.

What is the recommended PCB layout practice for thermal management of the 2SK1315L-E?

For optimal thermal performance, the 2SK1315L-E's exposed drain tab (Pins 2 and 4) must be soldered to a minimum 200 mm² copper pour on the PCB's inner or outer layer, connected via ≥6 thermal vias (0.3 mm diameter) to internal ground or power planes. The LDPAK package relies on this copper area for heat conduction; insufficient copper results in rapid T_ch rise beyond the 150°C limit. Renesas' application notes confirm that 200 mm² copper with 6 vias achieves ~45°C/W junction-to-ambient, enabling full 8 A operation at ≤60°C ambient.