Renesas 2SK1318-90-E

Overview

2SK1318-90-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drives, and solenoid control circuits. It delivers 20 A continuous drain current, 120 V drain-source breakdown voltage, 0.11 Ω R_DS(on) at V_GS = 4 V, and features low gate drive requirements compatible with 5 V logic sources.

For engineers reviewing the 2SK1318-90-E datasheet, 2SK1318-90-E pinout, 2SK1318-90-E application, or 2SK1318-90-E equivalent, key selection criteria include its TO-220FM package thermal performance, 80 A peak drain current capability, body diode reverse recovery time of 280 ns, and suitability for industrial-grade switching where low conduction loss and fast turn-off are critical.

Technical Context

This MOSFET employs a vertical DMOS structure optimized for low on-resistance and high switching speed. Its gate threshold voltage range (1.0–2.0 V) enables reliable enhancement-mode operation with minimal drive current, while the integrated body diode supports freewheeling in inductive loads without external components.

The device operates within a channel temperature range up to 150°C and exhibits defined safe operating area (SOA) limits across pulse widths from 10 µs to DC, with derating governed by case temperature and thermal resistance (θ_ch–c = 3.57°C/W).

Key Specifications

Pinout & Package

2SK1318-90-E is housed in the TO-220FM (RENESAS code PRSS0003AD-A) package - a full-molded variant of TO-220 with insulated backside, enabling direct heatsink mounting without insulating washers. The package provides robust thermal performance (θ_ch–c = 3.57°C/W) and mechanical stability for industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NF10 and IRFZ44NPBF, the 2SK1318-90-E uniquely balances 120 V rating, 4 V logic compatibility, and industrial thermal robustness - making it the only option among the three qualified for 100 V bus switching with minimal gate drive overhead and certified TO-220FM mechanical reliability.

Availability

2SK1318-90-E is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, solenoid actuation, and programmable logic controller output stages requiring stable component supply and long-term production continuity.

Supply support for 2SK1318-90-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK1318-90-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding reliability, thermal resilience, and logic-level drivability.

FAQ

What is the gate threshold voltage range for the 2SK1318-90-E?

The 2SK1318-90-E has a gate-to-source cutoff voltage (V_GS(off)) range of 1.0 V to 2.0 V at I_D = 1 mA and V_DS = 10 V. This low threshold enables reliable turn-on with standard 5 V logic outputs and ensures stable enhancement-mode behavior across temperature and process variation. The 2SK1318-90-E does not require negative gate bias for full depletion.

Can the 2SK1318-90-E be used in a synchronous rectifier configuration?

Yes - the 2SK1318-90-E integrates a body diode rated for 20 A continuous reverse current with a typical reverse recovery time (t_rr) of 280 ns. When used as a synchronous rectifier in buck or flyback topologies, its low R_DS(on) (0.11 Ω @ 4 V) and fast diode recovery reduce conduction and switching losses versus discrete Schottky solutions. The 2SK1318-90-E must be driven with precise complementary timing to avoid shoot-through.

What is the maximum allowable case temperature for continuous operation of the 2SK1318-90-E?

The 2SK1318-90-E supports continuous operation up to a channel temperature (T_ch) of 150°C, with corresponding case temperature limited by thermal design. At T_c = 25°C, its channel dissipation is rated at 35 W; derating follows the published curve - e.g., ~17.5 W at T_c = 100°C. Proper heatsinking per the TO-220FM footprint and θ_ch–c = 3.57°C/W is mandatory. The 2SK1318-90-E must not exceed 150°C channel temperature under any condition.

Is the 2SK1318-90-E RoHS compliant?

Yes - the 2SK1318-90-E complies with the EU RoHS Directive (2011/65/EU) and related environmental regulations. Renesas Electronics confirms lead-free termination and halogen-free molding compound for this part. Compliance documentation, including material declarations and test reports, is available through Renesas' official product portal. The 2SK1318-90-E meets all applicable substance restrictions without exemptions.

Does the 2SK1318-90-E have avalanche ruggedness rating?

No - the 2SK1318-90-E datasheet does not specify single-pulse or repetitive avalanche energy (E_AS) ratings. While its 120 V V_DSS rating implies basic avalanche capability under controlled conditions, Renesas does not guarantee or characterize avalanche performance. Designers must implement external clamping (e.g., TVS, RCD snubbers) or ensure operation stays within the Safe Operating Area (SOA) to prevent failure. The 2SK1318-90-E is not intended for unclamped inductive switching.