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Renesas 2SK1335-90L
- Part No.:
- 2SK1335-90L
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1335-90L.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,970
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Product details
Overview
2SK1335-90L from Renesas Electronics (formerly Hitachi) is a silicon N-channel enhancement-mode power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 200 V VDSS, 3 A continuous drain current, 0.5 Ω typical RDS(on) at VGS = 10 V, 2.3 S |yfs|, and 380 pF Ciss, operating up to 150 °C channel temperature.
For engineers reviewing the 2SK1335-90L datasheet, 2SK1335-90L pinout, 2SK1335-90L application, or 2SK1335-90L equivalent, key selection criteria include its low drive current requirement, absence of secondary breakdown, body diode reverse recovery time (trr = 120 ns), and DPAK-1 package thermal performance for compact power stage layouts.
Technical Context
This MOSFET operates as a unidirectional high-side or low-side switch in non-synchronous buck, flyback, and forward converter topologies. Its gate threshold voltage (VGS(off) = 2.0–4.0 V) enables TTL/CMOS-level drive compatibility, while the 0.5 Ω RDS(on) minimizes conduction loss at 2 A ID.
The device integrates an intrinsic body diode with VDF = 1.0 V at 3 A and trr = 120 ns under diF/dt = 50 A/µs, supporting moderate-frequency hard-switched operation. Safe operating area (SOA) curves confirm robustness up to 10 µs pulse width at 200 V and 12 A peak current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Withstands up to 200 V drain-source blocking voltage without avalanche breakdown |
| RDS(on) | 0.5 Ω (typ) at VGS = 10 V, ID = 2 A - Enables <1 W conduction loss at 2 A continuous current |
| |yfs| | 2.3 S (typ) at VDS = 10 V, ID = 2 A - High transconductance supports fast gate-driven switching transitions |
| tr/tf | 27 ns / 20 ns - Rise/fall times measured with RL = 15 Ω, enabling ~1 MHz switching in optimized layouts |
| Ciss | 380 pF - Input capacitance determines required gate drive charge and influences EMI behavior |
| trr | 120 ns - Body diode reverse recovery time impacts turn-on loss and snubber design in non-synchronous topologies |
| Pch | 20 W at TC = 25 °C - Maximum channel dissipation defines heatsink requirements for continuous operation |
Pinout & Package
2SK1335-90L is housed in a surface-mount DPAK-1 (TO-252-1) package with exposed drain pad for thermal conduction. The package measures 6.5 × 5.5 mm with 1.7 mm height and weighs 0.42 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±20 V VGSS; low input capacitance enables low drive current |
| 2 (D) | Drain | Main high-voltage power terminal; electrically connected to exposed backside pad for thermal path |
| 3 (S) | Source | Power return/reference node; ties to gate driver ground in low-side configurations |
| 4 (D) | Drain (redundant) | Second drain connection-internally tied to Pin 2-to enhance current handling and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe linear-mode operation and eliminates need for SOA derating in analog or soft-start applications |
| Low RDS(on) | 0.5 Ω typical reduces I²R losses in 3 A DC-DC output stages, improving efficiency by ~0.5–1.2% over comparable 0.8 Ω devices |
| High-speed switching | 27 ns rise time and 20 ns fall time support efficient operation up to 1 MHz in well-designed gate-drive circuits |
| Low drive current | 380 pF Ciss and 35 pF Crss minimize gate charge demand, easing integration with low-power microcontroller GPIOs |
| Integrated body diode | 1.0 V forward drop and 120 ns trr allow use in non-synchronous converters without external diode in cost-sensitive designs |
Applications
| Non-Synchronous Buck Converter | Isolated Flyback Power Supply |
|---|---|
Use Scenario: Step-down DC-DC conversion in industrial PLC I/O modules requiring 12 V → 5 V at 2 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacement; switches at 500 kHz with fixed off-time control. Use Value: Eliminates external Schottky diode, reducing BOM count and PCB area while maintaining <85% efficiency at full load. | Use Scenario: Primary-side switch in 15 W AC-DC adapter for smart home sensors. IC Role / Device Role / Timing Role: Main power switch driven by UC3842 controller; handles 200 V reflected output voltage. Use Value: 200 V VDSS and no secondary breakdown ensure reliable operation during output short-circuit events. |
| DC Motor Drive Half-Bridge | LED Driver for High-Bay Lighting |
Use Scenario: 24 V brushed DC motor control in automated warehouse conveyors. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; PWM-controlled at 20 kHz to minimize audible noise. Use Value: 3 A ID rating and 150 °C Tch support continuous 1.8 A RMS motor current with passive heatsinking. | Use Scenario: Constant-current switch in 48 V input, 36 V/700 mA LED string driver. IC Role / Device Role / Timing Role: Regulating switch in buck-derived topology; modulated at 100 kHz for EMI compliance. Use Value: 0.5 Ω RDS(on) limits conduction loss to <0.6 W, enabling thermally constrained aluminum-core PCB mounting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK20Z | 200 V VDSS, 2.5 A ID, 0.9 Ω RDS(on), TO-220 package | Higher RDS(on) increases conduction loss; through-hole mounting limits board density | Preferred where mechanical robustness and manual assembly outweigh thermal and space constraints |
| IRF640NPBF | 200 V VDSS, 18 A ID, 0.18 Ω RDS(on), TO-220 package, higher Qg | Higher gate charge (71 nC) demands stronger driver; unsuitable for low-current MCU drive | Selected when higher current headroom and lower on-resistance justify added gate drive complexity |
Compared with STP3NK20Z and IRF640NPBF, the 2SK1335-90L delivers optimal balance of low drive current, DPAK thermal performance, and 3 A capability-making it ideal for space-constrained, medium-power SMPS where gate drive simplicity and layout density are critical.
Availability
2SK1335-90L is available at Aetrix Electronics and suitable for DC-DC converters, switching regulators, and motor drive circuits requiring stable component supply and long-term industrial availability.
Supply support for 2SK1335-90L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics, Renesas Technology, and Hitachi Semiconductor. It develops high-reliability analog, power, and embedded solutions for industrial, automotive, and infrastructure markets.
The 2SK1335-90L belongs to Hitachi's legacy discrete power MOSFET family, engineered specifically for high-efficiency, high-reliability switching power supplies and motor controls where thermal stability and ruggedness are essential.
FAQ
What is the maximum continuous drain current rating for the 2SK1335-90L?
The 2SK1335-90L has a continuous drain current (ID) rating of 3 A at TC = 25 °C. This value decreases with increasing case temperature per the derating curve-e.g., ~1.8 A at TC = 100 °C. The 12 A peak drain current (ID(pulse)) applies only for pulses ≤10 µs and duty cycle ≤1%, as specified in the Absolute Maximum Ratings table.
Does the 2SK1335-90L have a built-in body diode, and what are its characteristics?
Yes, the 2SK1335-90L includes an integrated body diode between source and drain. Its forward voltage (VDF) is 1.0 V at IF = 3 A and VGS = 0, and its reverse recovery time (trr) is 120 ns under diF/dt = 50 A/µs. These parameters are confirmed in the Electrical Characteristics table and support use in non-synchronous topologies without an external diode.
What is the gate-to-source threshold voltage range for the 2SK1335-90L?
The gate-to-source cutoff voltage (VGS(off)) for the 2SK1335-90L is specified as 2.0–4.0 V at ID = 1 mA and VDS = 10 V. This defines the minimum gate voltage needed to initiate conduction. Full enhancement (for RDS(on) specification) requires VGS ≥ 10 V, as confirmed in the RDS(on) test condition.
Can the 2SK1335-90L be driven directly by a 3.3 V microcontroller GPIO?
No-the 2SK1335-90L is not guaranteed to fully enhance at 3.3 V due to its VGS(off) upper limit of 4.0 V and RDS(on) test condition of VGS = 10 V. Driving it with 3.3 V may result in high RDS(on) and excessive heating. A gate driver or level-shifting circuit is required for reliable operation with 3.3 V logic.
What thermal resistance does the 2SK1335-90L exhibit in its DPAK-1 package?
The 2SK1335-90L DPAK-1 package has a channel-to-case thermal resistance (θch–c) of 6.25 °C/W, as stated in the transient thermal impedance chart. This value assumes proper soldering to a copper area ≥1 cm². No θJA is provided in the datasheet, so system-level thermal design must rely on θch–c and heatsink interface modeling.
2SK1335-90L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1335-90L FAQ
1.How can I place an order for 2SK1335-90L through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1335-90L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1335-90L reliable?
The price and inventory of 2SK1335-90L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1335-90L is usually 5 days.
3.What payment methods are accepted for 2SK1335-90L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1335-90L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1335-90L?
2SK1335-90L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1335-90L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1335-90L?
For technical support, including 2SK1335-90L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1335-90L requirements.
6.How does Aetrix verify that 2SK1335-90L is sourced from the original manufacturer or authorized distributors?
All 2SK1335-90L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1335-90L meets industry standards.
7.What is the process for return or replacement of 2SK1335-90L?
All 2SK1335-90L units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1335-90L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1335-90L part is unused and in its original packaging.
Return procedure for 2SK1335-90L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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