Renesas 2SK1339-E

Overview

2SK1339-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in off-line power supplies and DC-DC converters. It features 900 V V_DSS, 3 A continuous drain current, 5.0 Ω typical R_DS(on) at V_GS = 10 V, 425 pF C_iss, and TO-3P package with isolated flange. It is used in flyback and forward converter primary-side switches where high voltage blocking and low conduction loss are required.

For engineers reviewing the 2SK1339-E datasheet, 2SK1339-E pinout, 2SK1339-E application, or 2SK1339-E equivalent, key selection criteria include its 900 V breakdown rating, 80 W channel dissipation at T_C = 25°C, 10 ns turn-on delay, body diode reverse recovery time of 850 ns, and suitability for industrial switching regulators operating up to 150°C channel temperature.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for rugged high-voltage operation without secondary breakdown limitations. Its gate threshold voltage (V_GS(off)) ranges from 2.0 V to 3.0 V, enabling reliable enhancement-mode turn-on with standard 10 V gate drive. The device integrates a fast-recovery body diode with 0.9 V forward voltage at 3 A, supporting synchronous rectification–compatible topologies when externally driven.

Thermal performance is defined by θ_ch–c = 1.56°C/W and a maximum channel temperature of 150°C. Safe operating area (SOA) curves confirm DC operation up to 3 A at 200 V and pulse operation up to 7 A with 10 µs width, making it appropriate for transient-heavy industrial power stages.

Key Specifications

Pinout & Package

2SK1339-E is housed in a TO-3P (RENESAS code PRSS0004ZE-A) metal package with electrically isolated flange. The flange serves as the Drain terminal and provides mechanical mounting and thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK90ZFP and IXTP50N10P, the 2SK1339-E offers optimal balance of 900 V rating, TO-3P thermal performance, and moderate gate charge for compact industrial power supplies-where flange isolation and 3 A–class current handling are prioritized over raw current density.

Availability

2SK1339-E is available at Aetrix Electronics and suitable for industrial switching power supplies, AC-DC adapters, and telecom DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for 2SK1339-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK1339-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for reliability in industrial off-line power conversion where surge immunity, thermal stability, and SOA robustness are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK1339-E at 100°C case temperature?

The 2SK1339-E has a maximum continuous drain current (I_D) of 3 A at T_C = 25°C. At 100°C case temperature, derating applies: using the power vs. temperature curve on page 4 of the datasheet, P_ch drops to ~35 W, and with R_DS(on) ≈ 6.2 Ω at 100°C, the practical I_D limit is approximately 2.4 A. Always verify thermal design margins using θ_ch–c = 1.56°C/W and actual heatsink performance for the 2SK1339-E.

Does the 2SK1339-E have a built-in body diode, and what are its key parameters?

Yes, the 2SK1339-E integrates a monolithic body diode between source and drain. Its key parameters are V_DF = 0.9 V at I_F = 3 A and reverse recovery time t_rr = 850 ns under di/dt = 100 A/µs. This diode is rated for 3 A continuous reverse current (I_DR) and supports freewheeling in flyback and forward converters. The 2SK1339-E body diode is not optimized for synchronous rectification but performs reliably in standard hard-switched topologies.

Can the 2SK1339-E be used in avalanche mode, and what is its rated avalanche energy?

The 2SK1339-E datasheet does not specify single-pulse or repetitive avalanche energy ratings, nor does it guarantee avalanche capability. While the device exhibits no secondary breakdown and can tolerate limited linear-mode stress, Renesas does not characterize or warrant operation in avalanche. For designs requiring controlled avalanche (e.g., snubberless flyback), select devices explicitly rated for UIS (Unclamped Inductive Switching), such as the 2SK1339-E's successor series. Do not rely on untested avalanche behavior for the 2SK1339-E.

What is the gate-to-source leakage current specification for the 2SK1339-E, and how does it affect high-impedance gate drive?

The 2SK1339-E specifies gate-to-source leakage current I_GSS ≤ ±10 µA at V_GS = ±25 V and T_A = 25°C. This low leakage enables compatibility with high-impedance gate bias networks (e.g., 1 MΩ pull-down resistors), minimizing static power loss while maintaining reliable turn-off. However, at elevated temperatures (>85°C), leakage may increase exponentially; for thermally demanding applications, verify gate drive stability using the 2SK1339-E's full temperature range data in the "Electrical Characteristics" table.

Is the 2SK1339-E RoHS compliant, and what is its lead-free status?

Yes, the 2SK1339-E is RoHS compliant and lead-free. Per Renesas' environmental compliance documentation (Rev.2.00, Sep 2005), the device meets EU RoHS Directive requirements, with lead content below 0.1 wt% and all other restricted substances within specified limits. The TO-3P package uses matte tin plating on external terminals. Confirm latest compliance status via Renesas' official product page or material declaration for the 2SK1339-E before final qualification.