Renesas 2SK1340-E

Overview

2SK1340-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 900 V drain-to-source breakdown voltage, 5 A continuous drain current, 3.0 Ω typical R_DS(on) at V_GS = 10 V, 740 pF input capacitance, and TO-3P package with isolated flange. It enables efficient high-voltage power conversion in industrial SMPS designs.

For engineers reviewing the 2SK1340-E datasheet, 2SK1340-E pinout, 2SK1340-E application, or 2SK1340-E equivalent, key selection criteria include its 900 V V_DSS, low 3.0 Ω R_DS(on), fast 15 ns turn-on delay, 900 ns body diode reverse recovery time, and suitability for high-voltage flyback and forward converter topologies requiring ruggedness and thermal stability.

Technical Context

This MOSFET uses planar vertical DMOS structure optimized for high-voltage blocking and low conduction loss. Its gate threshold voltage (2.0–3.0 V) ensures reliable enhancement-mode operation with standard 10 V gate drive, while the absence of secondary breakdown allows safe operation under inductive switching stress.

The integrated body diode exhibits 0.9 V forward voltage at 5 A and 900 ns reverse recovery time under 100 A/µs di/dt - critical for synchronous rectification and freewheeling in high-frequency converters where diode losses dominate efficiency.

Key Specifications

Pinout & Package

2SK1340-E is housed in a TO-3P (JEITA SC-65, Renesas PRSS0004ZE-A) package with electrically isolated metal flange for direct heatsinking. The flange is connected to Drain (Pin 2), enabling low-inductance, high-current thermal path design.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW9NK90Z and FQP9N90C, the 2SK1340-E trades higher R_DS(on) for guaranteed flange isolation and proven ruggedness in legacy industrial SMPS designs - making it preferred where thermal reliability and long-term supply continuity outweigh marginal efficiency gains.

Availability

2SK1340-E is available at Aetrix Electronics and suitable for industrial switching power supplies, AC-DC adapters, and uninterruptible power systems requiring stable component supply and long-lifecycle support.

Supply support for 2SK1340-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure applications.

The 2SK1340-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for rugged, high-reliability power conversion in industrial-grade switching regulators and offline power supplies.

FAQ

What is the maximum continuous drain current rating for the 2SK1340-E?

The 2SK1340-E has a continuous drain current (I_D) rating of 5 A at T_C = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating is required above 25°C per the thermal resistance curve. At T_C = 100°C, the usable I_D drops to approximately 2.8 A. The 2SK1340-E must not exceed this limit in sustained operation to avoid thermal runaway.

Does the 2SK1340-E have an isolated flange, and how does that affect PCB layout?

Yes, the 2SK1340-E uses a TO-3P package with electrically isolated flange connected to the Drain terminal. This allows direct mechanical mounting to a grounded heatsink without requiring insulating hardware, simplifying thermal design and reducing parasitic inductance. PCB layout must ensure no copper pour or trace contacts the flange except through designated mounting holes - maintaining isolation integrity is essential for safety and EMI performance in high-voltage applications using the 2SK1340-E.

What is the gate threshold voltage range for the 2SK1340-E, and why does it matter for drive circuit design?

The 2SK1340-E has a gate-to-source cutoff voltage (V_GS(off)) of 2.0–3.0 V at I_D = 1 mA. This defines the minimum gate voltage needed to initiate conduction. For reliable full enhancement, V_GS ≥ 10 V is required to achieve the specified 3.0 Ω R_DS(on). Drive circuits must deliver ≥10 V with sufficient current to charge the 740 pF input capacitance quickly - undersized gate drivers cause slow switching and increased dynamic losses in the 2SK1340-E.

Can the 2SK1340-E be used in place of an IGBT in motor drive inverters?

The 2SK1340-E can replace low-frequency IGBTs in 1–20 kHz motor drive inverters where its 900 V rating and 12 A pulse current meet bus voltage and surge requirements. However, unlike IGBTs, it lacks minority-carrier storage - resulting in faster switching but higher gate drive demands and no tail current. Its 3.0 Ω R_DS(on) yields higher conduction loss than typical IGBTs at >10 A, so the 2SK1340-E is best suited for <5 A RMS applications where switching loss dominates, such as HVAC blower drives.

What is the body diode reverse recovery time (t_rr) of the 2SK1340-E, and how does it impact half-bridge operation?

The 2SK1340-E body diode has a reverse recovery time (t_rr) of 900 ns under I_F = 5 A and di_F/dt = 100 A/µs. In half-bridge configurations, this t_rr determines the minimum dead-time required between high-side and low-side switching to prevent shoot-through. Using less than ~1.2 µs dead-time risks cross-conduction, especially at high di/dt. Designers must verify timing margins in actual layout with the 2SK1340-E, as PCB parasitics can extend effective recovery.