Renesas 2SK1342-E

Overview

2SK1342-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-voltage, high-speed switching in offline power supplies and DC-DC converters. It features 900 V V_DSS, 1.2 Ω typical R_DS(on) at V_GS = 10 V, 8 A continuous drain current, TO-3P package with isolated flange, and no secondary breakdown limitation - enabling robust operation in flyback and forward converter primary switches.

For engineers reviewing the 2SK1342-E datasheet, 2SK1342-E pinout, 2SK1342-E application, or 2SK1342-E equivalent, key selection criteria include its 900 V blocking capability, low gate charge (Q_g ≈ 50 nC), fast switching (t_d(off) = 185 ns), body diode reverse recovery time (t_rr = 900 ns), and thermal resistance (θ_ch–c = 1.25 °C/W) for high-efficiency, high-reliability power stage design.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage avalanche ruggedness and stable R_DS(on) over temperature. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) ensures clean turn-on with standard 10 V gate drivers, while the absence of secondary breakdown allows safe operation across the full SOA up to 100 W at T_C = 25°C.

The integrated body diode exhibits 0.9 V forward voltage at 8 A and 900 ns reverse recovery time under di/dt = 100 A/µs - suitable for self-driven synchronous rectification in low-frequency resonant topologies but not recommended for high-frequency hard-switched freewheeling without external snubbing.

Key Specifications

Pinout & Package

2SK1342-E uses the TO-3P (PRSS0004ZE-A) package: insulated metal flange for direct heatsinking, 3-terminal through-hole configuration with 18.0 mm × 19.9 mm footprint and 5.0 g mass. Flange is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW9NK90Z and FQP9N90C, the 2SK1342-E offers superior thermal resistance (1.25 °C/W vs. ≥1.5 °C/W), tighter V(BR)_DSS distribution, and guaranteed no secondary breakdown - making it preferred for high-reliability, thermally constrained offline SMPS where SOA integrity is non-negotiable.

Availability

2SK1342-E is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom DC-DC converters, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for 2SK1342-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial and automotive markets.

The 2SK1342-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for reliability-critical offline power conversion systems operating from universal AC inputs up to 380 VAC.

FAQ

What is the maximum continuous drain current rating for the 2SK1342-E?

The 2SK1342-E has a continuous drain current (I_D) rating of 8 A at T_C = 25°C. This value decreases with increasing case temperature - e.g., derated to ~5.5 A at T_C = 100°C per the thermal derating curve. The 20 A peak drain current (I_D(pulse)) applies only for PW ≤ 10 µs and duty cycle ≤ 1%, and must be verified against the SOA chart in the 2SK1342-E datasheet.

Does the 2SK1342-E have an isolated flange, and how is it electrically connected?

Yes, the 2SK1342-E uses the TO-3P package (RENESAS code PRSS0004ZE-A) with an electrically isolated metal flange. The flange is internally connected to the Drain terminal (Pin 2), enabling direct mechanical attachment to a heatsink without additional insulation - provided the heatsink remains at Drain potential. This configuration simplifies thermal design while maintaining electrical isolation from Source and Gate.

What is the gate threshold voltage range for the 2SK1342-E, and how does it affect drive requirements?

The 2SK1342-E has a gate-to-source cutoff voltage (V_GS(off)) of 2.0–3.0 V at I_D = 1 mA. This means the device begins conducting significantly above ~2.5 V and achieves full enhancement near 10 V. To ensure low R_DS(on) (1.2 Ω typ), a minimum 10 V gate drive is required - making the 2SK1342-E compatible with standard logic-level or dedicated MOSFET gate drivers, not 5 V-only controllers.

Can the 2SK1342-E be used in avalanche mode, and what is its rated avalanche energy?

The 2SK1342-E is specified for repetitive avalanche operation with no secondary breakdown limitation, confirming ruggedness under inductive switching stress. While the datasheet does not list a single-pulse avalanche energy (E_AS) value, its SOA curve and 900 V V_DSS rating imply capability for controlled avalanche in clamp-based topologies. For reliable design, always verify stress against the SOA plot and limit avalanche duration using external snubbers or Zener clamps.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SK1342-E, and how should it be applied in heatsink selection?

The 2SK1342-E has a channel-to-case thermal resistance (θ_ch–c) of 1.25 °C/W, measured at T_C = 25°C. To size a heatsink, subtract the desired maximum channel temperature (e.g., 125°C) minus ambient (e.g., 50°C), divide by power dissipation (e.g., 40 W), then subtract θ_ch–c and interface resistance (e.g., 0.2 °C/W for thermal paste). For 40 W at 50°C ambient, a heatsink ≤ 1.05 °C/W is required - confirming the 2SK1342-E's suitability for compact, high-power-density designs.