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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK1400A-E

Name: 2SK1400A-E
Brand: Renesas
SKU: 2SK1400A-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK1400A-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK1400A-E.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK1400A-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and AC/DC power supplies. It delivers R_DS(on) = 0.6 Ω (typ.) at V_GS = 10 V, supports V_DSS = 350 V, and handles I_D = 7 A continuous drain current with 50 W channel dissipation at T_C = 25°C.

For engineers reviewing the 2SK1400A-E datasheet, 2SK1400A-E pinout, 2SK1400A-E application, or 2SK1400A-E equivalent, key selection criteria include its TO-220AB package thermal performance, body diode reverse recovery time (t_rr = 240 ns), and gate charge characteristics critical for hard-switched SMPS designs.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast switching transients. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) ensures reliable turn-on with standard 10 V logic-level drive, while C_iss = 635 pF and C_rss = 40 pF support stable high-frequency operation up to several hundred kHz.

The integrated body diode exhibits V_DF = 1.0 V at I_F = 7 A and t_rr = 240 ns under di/dt = 100 A/μs, enabling use in freewheeling and synchronous rectification roles without external diode supplementation in medium-power topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	350 V - Withstands DC bus voltages up to 280 V in industrial SMPS with 25% safety margin
R_DS(on)	0.6 Ω typ. - Enables <1.7 W conduction loss at 4 A, reducing heatsink requirements
t_r/t_f	50 ns / 40 ns - Supports >200 kHz switching in hard-switched converters with low switching loss
Q_g	~40 nC (estimated from typical curves) - Determines gate driver current demand (~2 A peak for 20 ns rise)
t_rr	240 ns - Limits diode recovery loss in flyback/freewheeling stages at moderate load currents
P_ch	50 W at T_C = 25°C - Requires thermal interface and heatsink design for sustained 7 A operation
V_GS(th)	2.0–3.0 V - Ensures full enhancement with 5 V TTL-compatible gate drivers when paralleled

Pinout & Package

Package: TO-220AB (RENESAS code PRSS0004AC-A), flanged metal case with isolated drain tab, 1.8 g mass, compatible with standard TO-220 heatsinks and mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	High-impedance input requiring <10 μA leakage; driven by 10 V logic for full enhancement
2 (Drain)	High-side power terminal	Connected to heat sink via flange; electrically tied to drain metallization; must be insulated if heatsink grounded
3 (Source)	Reference node	Common return path for gate drive and load current; defines local ground reference for driver IC placement

Key Features

Feature	Design Value
Low R_DS(on)	0.6 Ω typ. reduces conduction loss by >30% vs. comparable 400 V MOSFETs, lowering thermal stress in compact enclosures
Fast switching	10 ns turn-on delay + 50 ns rise time enables efficient operation in 100–500 kHz SMPS without excessive EMI filtering
Integrated body diode	V_DF = 1.0 V and t_rr = 240 ns allow direct use in non-synchronous buck/flyback without external diode cost or layout area
Robust gate oxide	V_GSS = ±30 V rating protects against transient coupling during PCB layout or hot-plug events in industrial environments

Applications

Industrial DC-DC Converters	AC Motor Drives
Use Scenario: 24–48 V input, 12 V/10 A output isolated forward converter in PLC power modules. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250 kHz with 50% duty cycle. Use Value: Low R_DS(on) minimizes copper loss in primary winding; fast t_r/t_f reduces snubber losses and EMI filter size.	Use Scenario: 3-phase inverter stage for 0.5–2 kW induction motor control in HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration. Use Value: Body diode t_rr < 300 ns prevents shoot-through during commutation; 350 V rating covers 380 VAC line surges.
Switched-Mode Power Supplies	Uninterruptible Power Systems
Use Scenario: 350 V DC link chopper in telecom rectifier with 1.5 kW output. IC Role / Device Role / Timing Role: Main power switch in active clamp forward topology. Use Value: 50 W P_ch rating supports 7 A peak current during overload; TO-220AB flange enables direct heatsink mounting.	Use Scenario: Battery backup inverter stage converting 48 V DC to 120 V AC for medical equipment. IC Role / Device Role / Timing Role: High-voltage switching device in push-pull or half-bridge output stage. Use Value: V_DSS = 350 V accommodates 48 V battery + boost voltage + margin; low Q_g eases gate drive design at 50 kHz.

Industrial DC-DC Converters

AC Motor Drives

Use Scenario: 24–48 V input, 12 V/10 A output isolated forward converter in PLC power modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250 kHz with 50% duty cycle.

Use Value: Low R_DS(on) minimizes copper loss in primary winding; fast t_r/t_f reduces snubber losses and EMI filter size.

Use Scenario: 3-phase inverter stage for 0.5–2 kW induction motor control in HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration.

Use Value: Body diode t_rr < 300 ns prevents shoot-through during commutation; 350 V rating covers 380 VAC line surges.

Switched-Mode Power Supplies

Uninterruptible Power Systems

Use Scenario: 350 V DC link chopper in telecom rectifier with 1.5 kW output.

IC Role / Device Role / Timing Role: Main power switch in active clamp forward topology.

Use Value: 50 W P_ch rating supports 7 A peak current during overload; TO-220AB flange enables direct heatsink mounting.

Use Scenario: Battery backup inverter stage converting 48 V DC to 120 V AC for medical equipment.

IC Role / Device Role / Timing Role: High-voltage switching device in push-pull or half-bridge output stage.

Use Value: V_DSS = 350 V accommodates 48 V battery + boost voltage + margin; low Q_g eases gate drive design at 50 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK30ZFP	300 V V_DSS, R_DS(on) = 2.2 Ω, TO-220FP package (isolated flange)	Limited to ≤240 V DC bus; higher conduction loss increases thermal load	Select when isolation between drain and heatsink is mandatory and voltage stress is ≤240 V
IXTP30N30P	300 V V_DSS, R_DS(on) = 0.12 Ω, TO-220 package, no body diode specified	Lower R_DS(on) but requires external fast diode; unsuitable for freewheeling-only roles	Select when ultra-low conduction loss is prioritized and discrete diode integration is acceptable

Compared with STP3NK30ZFP and IXTP30N30P, the 2SK1400A-E uniquely balances 350 V capability, sub-1 Ω R_DS(on), and a characterized body diode-making it optimal for cost-sensitive, medium-power industrial SMPS where voltage headroom and integrated diode recovery matter.

Availability

2SK1400A-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, AC motor drives, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for 2SK1400A-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK1400A-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for reliability in industrial power conversion where ruggedness, predictable switching behavior, and thermal stability are essential.

FAQ

What is the maximum continuous drain current rating for the 2SK1400A-E?

The 2SK1400A-E has a continuous drain current rating of 7 A at T_C = 25°C. This value decreases with increasing case temperature per the derating curve in the datasheet; at T_C = 100°C, the usable I_D drops to approximately 3.5 A. Proper heatsinking is required to maintain safe channel temperature below 150°C.

Does the 2SK1400A-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK1400A-E includes an integrated body diode rated for 7 A reverse drain current (I_DR). Its forward voltage is 1.0 V at I_F = 7 A and V_GS = 0, with a reverse recovery time (t_rr) of 240 ns under di/dt = 100 A/μs. These values are measured and specified in the official Renesas datasheet REJ03G0940-0300.

What is the gate-to-source voltage range for the 2SK1400A-E, and is it logic-level compatible?

The 2SK1400A-E supports V_GS = ±30 V absolute maximum, with a gate threshold voltage (V_GS(off)) of 2.0–3.0 V. It achieves full enhancement at V_GS = 10 V, making it compatible with standard logic-level gate drivers but not with 3.3 V-only controllers without level shifting.

Can the 2SK1400A-E be used in avalanche mode, and is avalanche energy rated?

No, the 2SK1400A-E datasheet does not specify single-pulse or repetitive avalanche energy ratings. The device is not characterized or guaranteed for operation in avalanche breakdown; designers must ensure V_DS never exceeds 350 V under any condition, including switching transients and inductive kickback.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SK1400A-E?

The channel-to-case thermal resistance (θ_ch–c) for the 2SK1400A-E is 2.50°C/W, as stated in the transient thermal impedance plot on page 5 of the Renesas datasheet REJ03G0940-0300. This value assumes proper mounting to a flat, smooth heatsink with thermal compound and applies only when the flange is fully contacted.

2SK1400A-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK1400A-E FAQ

1.How can I place an order for 2SK1400A-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1400A-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1400A-E reliable?

The price and inventory of 2SK1400A-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1400A-E is usually 5 days.

3.What payment methods are accepted for 2SK1400A-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1400A-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1400A-E?

2SK1400A-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1400A-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1400A-E?

For technical support, including 2SK1400A-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1400A-E requirements.

6.How does Aetrix verify that 2SK1400A-E is sourced from the original manufacturer or authorized distributors?

All 2SK1400A-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1400A-E meets industry standards.

7.What is the process for return or replacement of 2SK1400A-E?

All 2SK1400A-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1400A-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1400A-E part is unused and in its original packaging.

Return procedure for 2SK1400A-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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