Renesas 2SK1401A-E

Overview

2SK1401A-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-3P package, designed for high-speed switching in DC-DC converters and switching regulators. It features 350 V drain-to-source breakdown voltage, 0.30 Ω typical R_DS(on) at 8 A/10 V, 15 A continuous drain current, and fast switching with 15 ns turn-on delay and 100 ns turn-off delay.

For engineers reviewing the 2SK1401A-E datasheet, 2SK1401A-E pinout, 2SK1401A-E application, or 2SK1401A-E equivalent, this device is selected for high-efficiency, medium-power SMPS designs where low conduction loss, robust avalanche capability, and thermal stability under pulsed load conditions are critical.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for ruggedness and high dv/dt immunity. Its gate threshold voltage (2.0–3.0 V) enables direct drive from standard logic-level controllers, and its body diode exhibits 370 ns reverse recovery time with 100 A/µs di/dt rating - suitable for synchronous rectification and freewheeling in hard-switched topologies.

The device operates within a channel temperature range of –55°C to +150°C and delivers 100 W channel dissipation at T_C = 25°C. Its safe operating area (SOA) supports single-pulse operation up to 300 V/15 A with 10 µs pulse width, limited by R_DS(on) conduction rather than secondary breakdown.

Key Specifications

Pinout & Package

2SK1401A-E is housed in a TO-3P (RENESAS code PRSS0004ZE-A) metal-can package with isolated flange (Drain-connected), rated for 100 W dissipation at T_C = 25°C and featuring screw-mount mechanical interface for forced-air or heatsink cooling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP16NF50FP and IXTH16N50L2, the 2SK1401A-E offers superior thermal resistance (1.25°C/W vs. ≥2.5°C/W) and integrated flange isolation in TO-3P, making it optimal for space-constrained, thermally demanding 300 V-class SMPS where mechanical mounting simplicity and steady-state thermal management outweigh ultra-high-voltage headroom.

Availability

2SK1401A-E is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for 2SK1401A-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK1401A-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion systems where reliability under thermal and electrical stress is paramount.

FAQ

What is the maximum continuous drain current rating for 2SK1401A-E?

The 2SK1401A-E is rated for 15 A continuous drain current (I_D) at case temperature T_C = 25°C. This rating decreases with rising case temperature per the derating curve - at T_C = 100°C, the usable I_D drops to approximately 7.5 A. The 2SK1401A-E must be mounted on an adequately sized heatsink to maintain T_C within limits for sustained 15 A operation.

Does 2SK1401A-E have a built-in body diode, and what are its key parameters?

Yes, the 2SK1401A-E integrates a body diode between source and drain. Its key parameters include 15 A reverse drain current (I_DR) rating, 1.05 V forward voltage (V_DF) at 15 A, and 370 ns reverse recovery time (t_rr) tested at 15 A and di/dt = 100 A/µs. These values are confirmed in the "Electrical Characteristics" table of the official Renesas datasheet REJ03G0941-0200.

What is the gate-to-source voltage limit for 2SK1401A-E, and why is it important?

The 2SK1401A-E has a ±30 V gate-to-source voltage limit (V_GSS). Exceeding this rating risks permanent gate oxide damage, leading to increased leakage or catastrophic failure. This limit applies regardless of duration - even nanosecond transients above ±30 V require clamping. The 2SK1401A-E's 2.0–3.0 V threshold ensures compatibility with 3.3 V or 5 V logic, but gate drivers must include ±30 V rail clamping.

How does the R_DS(on) of 2SK1401A-E vary with temperature, and what is its impact?

The 2SK1401A-E exhibits positive temperature coefficient for R_DS(on): it rises from 0.30 Ω typ at 25°C to ~0.55 Ω at 100°C (per "R_DS(on) vs. Temperature" graph on page 4). This increase raises conduction loss quadratically with current, directly affecting thermal design - a heatsink must be sized to hold T_C low enough to keep R_DS(on) within acceptable loss budgets for the target application.

Is 2SK1401A-E suitable for automotive applications?

No, the 2SK1401A-E is classified as a "Standard" quality grade device per Renesas' quality grading system (page 1, Note 7), intended for office equipment, industrial robots, and test gear - not transportation or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature validation, or automotive-specific reliability testing. For automotive use, Renesas recommends qualified alternatives such as the RV1C002UNT2L or equivalent AEC-Q101 MOSFETs.