Renesas 2SK1402A-E

Overview

2SK1402A-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in off-line SMPS and DC-DC converters, featuring 650 V V_DSS, 2.0 Ω typical R_DS(on) at V_GS = 10 V, 4 A continuous drain current, and TO-220AB package with isolated flange. It delivers low drive current demand and no secondary breakdown limitation.

For engineers reviewing the 2SK1402A-E datasheet, 2SK1402A-E pinout, 2SK1402A-E application, or 2SK1402A-E equivalent, this device is selected for rugged, medium-power flyback and forward converter primary-side switching where 650 V blocking capability, fast turn-on/turn-off (t_d(on) = 8 ns, t_f = 35 ns), and thermal robustness (θ_ch–c = 2.50°C/W) are critical.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage switching with minimized gate charge (Q_g ≈ 24 nC at V_DD = 400 V) and low output capacitance (C_oss = 140 pF). Its body diode exhibits 300 ns reverse recovery time (t_rr) under 100 A/µs di/dt, enabling quasi-resonant operation without external snubbing in many topologies.

The device operates within a channel temperature range of –55°C to +150°C and supports pulse drain currents up to 16 A (PW ≤ 10 µs, duty ≤ 1%). Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) ensures stable enhancement-mode behavior with minimal risk of spurious turn-on in noisy environments.

Key Specifications

Pinout & Package

2SK1402A-E is housed in a TO-220AB package (RENESAS code PRSS0004AC-A) with electrically isolated metal flange (Drain-connected), enabling direct mounting to heatsinks without insulating hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and FQP4N60, the 2SK1402A-E offers superior 650 V voltage headroom and an isolated flange-critical for grounded-drain SMPS designs-while maintaining competitive R_DS(on) and switching speed for 60–100 W applications.

Availability

2SK1402A-E is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply and long-term manufacturability.

Supply support for 2SK1402A-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SK1402A-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliability-critical offline switching power supplies in industrial and commercial equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK1402A-E?

The 2SK1402A-E is rated for 4 A continuous drain current (I_D) at case temperature T_C = 25°C. This rating decreases linearly with rising case temperature-derating to approximately 2.5 A at T_C = 100°C per the thermal derating curve in the datasheet. The 2SK1402A-E must be mounted on an adequately sized heatsink to sustain continuous operation above ambient temperatures.

Does the 2SK1402A-E have an isolated drain flange?

Yes, the 2SK1402A-E uses the TO-220AB package (RENESAS code PRSS0004AC-A), which features an electrically isolated metal flange connected internally to the Drain terminal. This allows direct mechanical mounting to a grounded heatsink without requiring insulating pads or washers-provided the circuit design references the drain to chassis ground or a floating node.

What is the typical gate charge (Q_g) of the 2SK1402A-E?

The 2SK1402A-E does not specify Q_g in its official datasheet (Rev. 2.00, Sep 2005), but gate charge can be estimated from dynamic input characteristics: at V_DD = 400 V, Q_g is approximately 24 nC. This value supports efficient high-frequency switching with moderate gate drive strength and aligns with measured t_d(on) = 8 ns and t_f = 35 ns performance.

Can the 2SK1402A-E replace the 2SK1402-E in existing designs?

Yes-the 2SK1402A-E is a direct upgrade to the 2SK1402-E, offering higher 650 V V_DSS (vs. 600 V) and identical pinout, package, and thermal characteristics. All electrical parameters-including R_DS(on), switching times, and gate threshold-are specified across the same test conditions. No PCB or layout changes are required when substituting 2SK1402A-E for 2SK1402-E.

What is the body diode forward voltage (V_DF) of the 2SK1402A-E?

The body diode forward voltage of the 2SK1402A-E is 0.9 V typical at I_F = 4 A and V_GS = 0 V. This low V_DF reduces conduction loss during freewheeling intervals in flyback and forward converters, and its 300 ns reverse recovery time (t_rr) supports quasi-resonant operation without external snubbers in many designs.