Renesas 2SK1403A-E

Overview

2SK1403A-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It delivers 650 V drain-to-source breakdown voltage, 8 A continuous drain current, 1.0 Ω typical R_DS(on) at V_GS = 10 V, and 100 W channel dissipation at T_C = 25°C, operating reliably in industrial power supply applications.

For engineers reviewing the 2SK1403A-E datasheet, 2SK1403A-E pinout, 2SK1403A-E application, or 2SK1403A-E equivalent, key selection criteria include its 650 V V_DSS, low 1.0 Ω R_DS(on), fast 15 ns turn-on delay, TO-3P package thermal performance, and suitability for offline SMPS designs requiring robust avalanche ruggedness and no secondary breakdown limitation.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage switching with minimized gate charge (Q_g ≈ 50 nC) and low output capacitance (C_oss = 265 pF), enabling efficient hard-switching operation up to several hundred kHz. Its body diode exhibits 420 ns reverse recovery time (t_rr) at di_F/dt = 100 A/µs, supporting synchronous rectification and freewheeling roles in buck and flyback topologies.

The device operates within a channel temperature range of –55°C to +150°C and features ±30 V gate-source voltage tolerance. Its safe operating area (SOA) is defined up to 10 ms single-pulse width with DC derating governed by R_DS(on) and thermal resistance θ_ch–c = 1.25°C/W, confirming suitability for transient-heavy industrial power stages.

Key Specifications

Pinout & Package

2SK1403A-E is housed in a TO-3P (JEITA SC-65, Renesas PRSS0004ZE-A) metal-can package with isolated flange, rated for high-power thermal dissipation and mechanical robustness in industrial environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and IXTH8N65X2, the 2SK1403A-E offers balanced 650 V capability, proven TO-3P thermal reliability, and optimized SOA for industrial SMPS-making it preferred where legacy layout compatibility, surge margin, and rugged linear-mode operation are prioritized over ultra-low R_DS(on) or highest switching speed.

Availability

2SK1403A-E is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SK1403A-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SK1403A-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for reliability in industrial switching power supplies and motor control systems where ruggedness, SOA integrity, and long-term availability are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK1403A-E?

The 2SK1403A-E has a maximum continuous drain current (I_D) rating of 8 A at T_C = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature per the published thermal derating curve. At T_C = 100°C, the usable I_D drops to approximately 4.5 A. The 2SK1403A-E must not exceed this limit under steady-state conditions to avoid thermal runaway or parametric shift.

Does the 2SK1403A-E have an integrated body diode, and what are its characteristics?

Yes, the 2SK1403A-E includes an intrinsic body diode between source and drain. Its forward voltage (V_DF) is 0.95 V at I_F = 8 A and V_GS = 0, and its reverse recovery time (t_rr) is 420 ns under specified test conditions (di_F/dt = 100 A/µs). This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification like dedicated Schottky diodes.

What is the gate threshold voltage range for the 2SK1403A-E, and how does it affect drive design?

The gate-to-source cutoff voltage (V_GS(off)) for the 2SK1403A-E is specified from 2.0 V to 3.0 V at I_D = 1 mA. This relatively narrow threshold ensures predictable turn-on behavior and reduces susceptibility to false triggering from noise. Drive circuits must supply ≥10 V to achieve full enhancement and low R_DS(on), while staying within the ±30 V V_GS absolute maximum rating to prevent gate oxide damage.

Can the 2SK1403A-E be used in avalanche mode, and is it rated for repetitive operation?

The 2SK1403A-E is characterized for single-pulse avalanche energy (E_AS) in the datasheet's Safe Operating Area chart and explicitly states "no secondary breakdown," indicating inherent ruggedness against localized thermal failure during avalanche. However, Renesas does not specify repetitive avalanche ratings or guaranteed E_AS values. For designs relying on repetitive avalanche (e.g., active clamping), additional testing and derating are required; the 2SK1403A-E is best applied in hard-switched or soft-switched topologies where avalanche is avoided.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SK1403A-E, and how does it impact heatsink selection?

The 2SK1403A-E has a channel-to-case thermal resistance (θ_ch–c) of 1.25°C/W, measured under standard mounting conditions with the TO-3P flange attached to a heatsink using thermal compound. This value directly determines the temperature rise across the package: for example, at 100 W dissipation, ΔT = 125°C. Heatsink selection must ensure total thermal path (θ_ch–c + θ_c–s + θ_s–a) keeps T_ch ≤ 150°C under worst-case ambient and airflow conditions.