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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK1519-E

Name: 2SK1519-E
Brand: Renesas
SKU: 2SK1519-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK1519-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK1519-E.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK1519-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-3PL package, designed for high-speed switching applications with V_DSS = 450 V, R_DS(on) = 0.11 Ω (typ), and built-in fast-recovery body diode (t_rr = 120 ns). It delivers 30 A continuous drain current and supports motor control, DC-DC converters, and switching regulators.

For engineers reviewing the 2SK1519-E datasheet, 2SK1519-E pinout, 2SK1519-E application, or 2SK1519-E equivalent, key selection criteria include its 450 V blocking capability, low on-resistance at 10 V gate drive, fast switching times (t_d(on) = 65 ns, t_d(off) = 415 ns), and integrated diode performance under high di/dt conditions.

Technical Context

This MOSFET employs a vertical DMOS structure optimized for high-voltage, high-current switching with low conduction and switching losses. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) ensures reliable turn-on with standard logic-level gate drivers, while the low input capacitance (C_iss = 5800 pF) enables efficient high-frequency operation.

The device integrates a monolithic body diode rated for 30 A reverse recovery with t_rr = 120 ns and dI_F/dt = 100 A/µs, supporting hard-switched topologies without external freewheeling diodes. Thermal design is supported by a channel-to-case thermal resistance of 0.625°C/W and maximum channel temperature rating of 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	450 V - Supports primary-side switching in offline SMPS up to 380 V DC bus with safety margin.
R_DS(on)	0.11 Ω (typ) at V_GS = 10 V - Enables <1.7 W conduction loss at 30 A, reducing heatsink requirements.
I_D	30 A - Sustains continuous load current in industrial motor drives and high-power DC-DC stages.
t_rr	120 ns - Limits reverse recovery charge (Q_rr) in synchronous rectification and reduces EMI in hard-switched converters.
C_iss	5800 pF - Determines gate drive power requirement (~1.2 mW at 100 kHz, V_GS swing = 10 V).
t_d(off)	415 ns - Defines minimum off-time in PWM control; compatible with 500 kHz+ switching frequencies when combined with fast gate drivers.
P_ch	200 W at T_C = 25°C - Allows high transient power handling during short-duration overload events.

Pinout & Package

2SK1519-E uses the TO-3PL package (RENESAS code PRSS0004ZF-A), a through-hole metal-can variant with isolated tab, optimized for high-power dissipation and mechanical robustness in industrial environments.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V rating and low-impedance drive for fast switching.
2 (Drain)	High-side power terminal	Connected to high-voltage rail (up to 450 V); electrically tied to metal tab-requires isolation from heatsink unless designated as common-drain layout.
3 (Source)	Reference and return path	Serves as signal ground reference for gate drive; carries full load current (30 A) and must be routed with low-inductance, wide copper pour.

Key Features

Feature	Design Value
Low R_DS(on)	0.11 Ω typ reduces I²R conduction loss by >35% vs. comparable 500 V MOSFETs, directly lowering thermal stress in compact enclosures.
Built-in fast-recovery diode	t_rr = 120 ns enables use in flyback and forward converters without external diode, simplifying BOM and PCB layout.
High dI_F/dt rating	Rated for 100 A/µs diode commutation-supports high-frequency synchronous rectification in LLC resonant converters.
Robust gate oxide	V_GSS = ±30 V withstands gate transients in noisy industrial environments, reducing need for external clamping networks.

Applications

Motor Drive Inverter Stage	Switching Regulator High-Side Switch
Use Scenario: Three-phase BLDC motor control in HVAC compressors and industrial pumps operating from 300–400 V DC bus. IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration, switching at 10–20 kHz with dead-time controlled gate drive. Use Value: Low R_DS(on) minimizes conduction loss across full torque range; integrated diode handles regenerative energy during PWM decay phases.	Use Scenario: Primary-side switch in 200–500 W offline flyback or forward converter for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch turning on/off at 65–130 kHz, subjected to high-voltage drain spikes and capacitive ringing. Use Value: 450 V V_DSS provides margin over 375 V rectified line; fast t_d(off) and low C_oss reduce switching loss and improve efficiency at high frequency.
DC-DC Converter Output Stage	UPS Inverter Output Bridge
Use Scenario: 48 V to 12 V step-down converter in telecom and server power distribution units. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage, conducting high average current with low duty cycle. Use Value: Integrated body diode with 120 ns t_rr eliminates need for discrete Schottky, reducing component count and improving light-load efficiency.	Use Scenario: Full-bridge inverter output stage in 1–3 kVA online UPS systems converting 380 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 5–10 kHz with bidirectional current flow during regeneration. Use Value: 30 A I_D and 200 W P_ch support peak surge currents; TO-3PL package enables direct mounting to large heatsinks for sustained thermal management.

Motor Drive Inverter Stage

Switching Regulator High-Side Switch

Use Scenario: Three-phase BLDC motor control in HVAC compressors and industrial pumps operating from 300–400 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration, switching at 10–20 kHz with dead-time controlled gate drive.

Use Value: Low R_DS(on) minimizes conduction loss across full torque range; integrated diode handles regenerative energy during PWM decay phases.

Use Scenario: Primary-side switch in 200–500 W offline flyback or forward converter for industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch turning on/off at 65–130 kHz, subjected to high-voltage drain spikes and capacitive ringing.

Use Value: 450 V V_DSS provides margin over 375 V rectified line; fast t_d(off) and low C_oss reduce switching loss and improve efficiency at high frequency.

DC-DC Converter Output Stage

UPS Inverter Output Bridge

Use Scenario: 48 V to 12 V step-down converter in telecom and server power distribution units.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage, conducting high average current with low duty cycle.

Use Value: Integrated body diode with 120 ns t_rr eliminates need for discrete Schottky, reducing component count and improving light-load efficiency.

Use Scenario: Full-bridge inverter output stage in 1–3 kVA online UPS systems converting 380 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched power switch operating at 5–10 kHz with bidirectional current flow during regeneration.

Use Value: 30 A I_D and 200 W P_ch support peak surge currents; TO-3PL package enables direct mounting to large heatsinks for sustained thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	V_DSS = 500 V, R_DS(on) = 1.4 Ω (higher on-loss), TO-220FP package	Limited to lower-current (<8 A) applications; lacks integrated diode optimization for high di/dt	Choose when higher voltage margin is critical and current demand is ≤8 A; not suitable for 30 A motor drive loads.
IXTP50N10P	V_DSS = 100 V, R_DS(on) = 0.022 Ω, TO-220 package	Only suitable for ≤100 V systems; cannot replace 2SK1519-E in 400 V bus applications	Select only for low-voltage, high-efficiency DC-DC where 450 V rating is unnecessary and ultra-low R_DS(on) is prioritized.

Compared with STP4NK50ZFP and IXTP50N10P, the 2SK1519-E uniquely balances 450 V rating, 30 A current capability, and low 0.11 Ω on-resistance in a thermally robust TO-3PL package-making it irreplaceable in high-power industrial switching where both voltage headroom and conduction efficiency are simultaneously required.

Availability

2SK1519-E is available at Aetrix Electronics and suitable for motor control, switching regulator, and DC-DC converter applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from authorized channels.

Supply support for 2SK1519-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.

The 2SK1519-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for ruggedized industrial power conversion where reliability under high-voltage transients and thermal cycling is essential.

FAQ

What is the maximum drain-to-source voltage rating for the 2SK1519-E?

The 2SK1519-E has a maximum drain-to-source voltage (V_DSS) rating of 450 V, verified per absolute maximum ratings in the official Renesas datasheet REJ03G0948-0400 Rev.4.00. This rating applies at T_A = 25°C and defines the upper limit for safe blocking operation-exceeding this voltage risks avalanche breakdown or permanent damage. Derating is required above 25°C ambient.

Does the 2SK1519-E include an integrated body diode, and what is its reverse recovery time?

Yes, the 2SK1519-E features a monolithically integrated body diode with a typical reverse recovery time (t_rr) of 120 ns, measured at I_F = 30 A, V_GS = 0, and dI_F/dt = 100 A/µs. This fast recovery characteristic is confirmed in the Electrical Characteristics table of the 2SK1519-E datasheet and enables efficient operation in flyback and forward converter topologies without external diodes.

What package type does the 2SK1519-E use, and is the drain electrically connected to the case?

The 2SK1519-E uses the TO-3PL package (RENESAS code PRSS0004ZF-A), and its drain terminal is electrically connected to the metal case/tab. This is explicitly shown in the Outline diagram on page 1 of the 2SK1519-E datasheet, where pin 2 (Drain) is labeled "D" and aligned with the case outline. Proper electrical isolation from the heatsink is required unless the system design intentionally references the drain as the thermal ground.

What is the typical on-resistance of the 2SK1519-E, and under what conditions is it specified?

The typical static drain-to-source on-state resistance (R_DS(on)) of the 2SK1519-E is 0.11 Ω, measured at I_D = 15 A and V_GS = 10 V under pulse test conditions (note 3 in the datasheet). This value reflects conduction loss under realistic gate drive and load conditions and is used to calculate power dissipation in continuous and intermittent operation modes.

Can the 2SK1519-E be used as a direct replacement for the 2SK1520-E?

No-the 2SK1519-E and 2SK1520-E are distinct parts with different voltage ratings: 2SK1519-E is rated for 450 V V_DSS, while 2SK1520-E is rated for 500 V. Their R_DS(on) also differs (0.11 Ω vs. 0.12 Ω typ), and they are not pin-compatible substitutes. Substitution requires full circuit revalidation, especially in designs relying on the higher 500 V margin of the 2SK1520-E.

2SK1519-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK1519-E FAQ

1.How can I place an order for 2SK1519-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1519-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1519-E reliable?

The price and inventory of 2SK1519-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1519-E is usually 5 days.

3.What payment methods are accepted for 2SK1519-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1519-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1519-E?

2SK1519-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1519-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1519-E?

For technical support, including 2SK1519-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1519-E requirements.

6.How does Aetrix verify that 2SK1519-E is sourced from the original manufacturer or authorized distributors?

All 2SK1519-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1519-E meets industry standards.

7.What is the process for return or replacement of 2SK1519-E?

All 2SK1519-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1519-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1519-E part is unused and in its original packaging.

Return procedure for 2SK1519-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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