Renesas 2SK1526-E
- Part No.:
- 2SK1526-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
2SK1526-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:528
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Product details
Overview
2SK1526-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features a 450 V drain-to-source breakdown voltage, 40 A continuous drain current, and a low 0.11–0.15 Ω RDS(on) at VGS = 10 V, enabling efficient high-power operation in industrial power supplies.
For engineers reviewing the 2SK1526-E datasheet, 2SK1526-E pinout, 2SK1526-E application, or 2SK1526-E equivalent, this device is selected for its robust safe operating area, fast switching (td(on) = 60 ns, tf = 160 ns), and integrated body diode with 600 ns reverse recovery time - critical parameters for hard-switched SMPS designs requiring thermal stability and low conduction loss.
Technical Context
This MOSFET employs a planar vertical structure optimized for high-voltage, high-current switching with no secondary breakdown limitation. Its gate threshold voltage (VGS(off) = 2.0–3.0 V) ensures reliable turn-on under standard 10 V gate drive while maintaining low gate leakage (±10 µA at ±25 V).
The device integrates a fast-recovery body diode (VDF = 1.2 V at 40 A, trr = 600 ns) and exhibits low output capacitance (Coss = 1430 pF) and reverse transfer capacitance (Crss = 150 pF), supporting high-frequency operation up to several hundred kHz in resonant and hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - Supports input voltages up to 360 V DC in offline or high-bus industrial SMPS without derating. |
| RDS(on) | 0.11–0.15 Ω @ VGS = 10 V - Enables ≤1.2 W conduction loss at 40 A, reducing heatsink requirements. |
| ID | 40 A continuous - Rated for sustained high-current output stages in 500–1000 W power converters. |
| td(on)/tf | 60 ns / 160 ns - Minimizes switching transition losses in 100–300 kHz hard-switched applications. |
| Ciss/Crss | 5800 pF / 150 pF - Low Miller charge improves gate drive efficiency and reduces EMI susceptibility. |
| Tch | 150 °C - Allows operation in high-ambient environments (e.g., enclosed industrial enclosures) with proper thermal design. |
Pinout & Package
2SK1526-E is housed in the TO-3PL package (RENESAS code PRSS0004ZF-A), a through-hole, isolated-tab metal can with 3 terminals and 9.9 g mass. The case serves as the drain connection and must be electrically isolated from heatsink unless referenced to system ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; low input capacitance (Ciss = 5800 pF) enables simple driver stage design. |
| 2 (Drain) | Main current output path | Connected to internal die backside; electrically tied to metal tab - requires insulating washer when mounted to grounded heatsink. |
| 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate drive loop; low-inductance PCB layout essential for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe linear-mode operation and eliminates need for SOA derating in transient overload conditions. |
| Low RDS(on) × Qg product | Combines low conduction loss with fast switching - verified by 60 ns turn-on delay and 175 ns rise time at 20 A. |
| Integrated fast body diode | VDF = 1.2 V / trr = 600 ns supports synchronous rectification or freewheeling in buck/forward converters. |
| High VGSS rating | ±30 V gate tolerance prevents damage during gate drive transients or layout-induced ringing. |
Applications
| Industrial Switching Power Supply | DC-DC Converter Module |
|---|---|
|
Use Scenario: Primary-side switch in 400–600 W offline flyback or forward converter powering PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage power switch handling 375 V DC bus with 100–200 kHz PWM control. Use Value: 450 V VDSS and 0.15 Ω RDS(on) ensure >92% efficiency and thermal margin at full load without forced air cooling. |
Use Scenario: Main switch in isolated 48 V input to 12 V/30 A output half-bridge DC-DC module for telecom shelf power. IC Role / Device Role / Timing Role: High-current primary switch with fast turn-off (tf = 160 ns) to minimize cross-conduction loss. Use Value: Low Crss (150 pF) reduces Miller-induced shoot-through risk and simplifies gate driver timing margins. |
| Motor Drive Inverter Stage | Uninterruptible Power Supply (UPS) |
|
Use Scenario: Upper-leg switch in 3-phase 2 kW servo drive inverter feeding permanent magnet motor. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in IGBT/MOSFET hybrid topology. Use Value: 160 A peak drain current rating and 250 W channel dissipation support short-duration torque surge demands. |
Use Scenario: Battery-charging FET and inverter switch in line-interactive 1 kVA UPS with boost/buck AC regulation. IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charge/discharge and AC bypass paths. Use Value: Body diode VDF = 1.2 V and trr = 600 ns enable efficient bidirectional conduction with minimal reverse recovery loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW45NM50FD | 500 V VDSS, 45 A ID, RDS(on) = 0.105 Ω, D2PAK package | Higher voltage rating but surface-mount only; lacks isolated tab for direct heatsinking. | Preferred where PCB space is constrained and thermal interface uses thermal pad + clip instead of mechanical mounting. |
| IXTH50N50L2 | 500 V VDSS, 50 A ID, RDS(on) = 0.10 Ω, TO-247 package | Lower RDS(on) and higher current, but larger footprint and no integrated fast diode (trr not specified). | Chosen when conduction loss dominates and external Schottky freewheeling diode is acceptable. |
Compared with STW45NM50FD and IXTH50N50L2, the 2SK1526-E offers a unique combination of isolated-tab TO-3PL packaging, guaranteed fast body diode performance, and proven ruggedness in high-temperature industrial environments - making it preferred for legacy-compatible, thermally demanding through-hole power designs.
Availability
2SK1526-E is available at Aetrix Electronics and suitable for industrial switching power supplies, DC-DC converter modules, and motor drive inverters requiring stable component supply and long-term manufacturing continuity.
Supply support for 2SK1526-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The 2SK1526-E belongs to Renesas' legacy high-voltage power MOSFET family, engineered specifically for rugged, high-efficiency switching in industrial power conversion systems where reliability under thermal stress and electrical transients is critical.
FAQ
What is the maximum continuous drain current rating for the 2SK1526-E?
The 2SK1526-E is rated for 40 A continuous drain current (ID) at TC = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C case temperature per the power vs. temperature derating curve - at 100°C case temperature, the usable ID drops to approximately 22 A. Always verify thermal design using the specified θch–c = 0.5°C/W value and actual board-level thermal resistance.
Does the 2SK1526-E have an integrated body diode, and what are its key characteristics?
Yes, the 2SK1526-E includes an integrated body diode with a forward voltage (VDF) of 1.2 V at 40 A and a reverse recovery time (trr) of 600 ns under specified test conditions (IF = 40 A, diF/dt = 100 A/µs). This diode is fully characterized and suitable for freewheeling in buck, forward, and LLC topologies - unlike many discrete MOSFETs where body diode performance is unspecified or marginal.
What is the gate threshold voltage range for the 2SK1526-E, and how does it affect drive requirements?
The 2SK1526-E has a gate-to-source cutoff voltage (VGS(off)) of 2.0–3.0 V at ID = 1 mA. This ensures full enhancement at standard 10 V gate drive while allowing compatibility with 5 V logic-level drivers in low-power configurations. Gate leakage remains below ±10 µA at ±25 V, minimizing static power draw in always-on control circuits using the 2SK1526-E.
Can the 2SK1526-E be used in avalanche-rated applications?
No - the 2SK1526-E datasheet does not specify single-pulse or repetitive avalanche energy ratings (EAS). Its Absolute Maximum Ratings define only VDSS, ID, and Pch; operation beyond VDSS is not guaranteed. For avalanche-tolerant designs, select devices explicitly rated for unclamped inductive switching (UIS), such as certain ON Semiconductor or Infineon automotive-grade MOSFETs.
What is the recommended PCB layout practice for the 2SK1526-E's TO-3PL package?
For the 2SK1526-E in TO-3PL, use wide copper pours on both top and inner layers for source and drain connections, with multiple thermal vias under the tab to internal ground or power planes. Keep gate traces short and shielded from drain switching noise; place the gate resistor (typically 10–47 Ω) as close as possible to the gate pin. Mount the device with insulating hardware if the heatsink is grounded, referencing the 2SK1526-E's isolated-tab construction.
2SK1526-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 450 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PL
2SK1526-E FAQ
1.How can I place an order for 2SK1526-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1526-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1526-E reliable?
The price and inventory of 2SK1526-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1526-E is usually 5 days.
3.What payment methods are accepted for 2SK1526-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1526-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1526-E?
2SK1526-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1526-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1526-E?
For technical support, including 2SK1526-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1526-E requirements.
6.How does Aetrix verify that 2SK1526-E is sourced from the original manufacturer or authorized distributors?
All 2SK1526-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1526-E meets industry standards.
7.What is the process for return or replacement of 2SK1526-E?
All 2SK1526-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1526-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1526-E part is unused and in its original packaging.
Return procedure for 2SK1526-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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