Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 2SK1567-04-E

Part No.:
2SK1567-04-E
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK1567-04-E.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:15,513

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SK1567-04-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 500 V drain-to-source breakdown voltage, 0.7 Ω typical RDS(on) at VGS = 10 V and ID = 4 A, 7 A continuous drain current, and TO-220FM package with isolated heatsink tab - enabling robust 35 W channel dissipation at TC = 25°C.

For engineers reviewing the 2SK1567-04-E datasheet, 2SK1567-04-E pinout, 2SK1567-04-E application, or 2SK1567-04-E equivalent, key selection criteria include its 500 V VDSS, low gate charge (Qg ≈ 40 nC), fast switching (td(off) = 95 ns), body diode reverse recovery time (trr = 320 ns), and suitability for industrial power conversion where secondary breakdown immunity and low drive current are critical.

Technical Context

This device operates as a unidirectional high-voltage power switch with enhancement-mode gate control. Its zero-gate-voltage drain current (IDSS) is limited to 250 µA at VDS = 400 V, and gate threshold voltage (VGS(off)) ranges from 2.0 V to 3.0 V, ensuring reliable turn-on with standard 10 V logic-level drive. The integrated body diode supports synchronous rectification and freewheeling paths.

Thermal performance is defined by θch–c = 3.57°C/W and transient thermal impedance curves supporting pulsed operation up to 10 ms. Safe operating area (SOA) is bounded by RDS(on)-limited conduction at DC and avalanche-limited pulse conditions - validated per JEDEC JESD24-A for single-pulse ruggedness.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - supports 400 V bus designs with 25% margin for voltage transients in offline SMPS
RDS(on)0.7 Ω typ. - enables ≤2.8 W conduction loss at 4 A, reducing heatsink requirements
ID7 A continuous - rated for sustained output in 100–300 W DC-DC stages
td(off)95 ns - allows >1 MHz switching in hard-switched topologies with minimal dead-time overhead
Ciss1050 pF - determines gate drive strength requirement (~1.5 A peak for 20 ns rise time)
trr320 ns - defines minimum off-time in synchronous buck converters to avoid shoot-through
Pch35 W at TC = 25°C - sets maximum continuous power handling before thermal derating applies

Pinout & Package

2SK1567-04-E is housed in a TO-220FM (RENESAS code PRSS0003AD-A) package with insulated metal tab for direct heatsink mounting and creepage/clearance compliance in high-voltage applications.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl electrode requiring ≤±30 V rating; low input capacitance (Ciss = 1050 pF) eases driver selection
2 (D)DrainMain high-side power terminal; electrically connected to metal tab - must be isolated from heatsink unless referenced to same potential
3 (S)SourcePower return path and gate reference node; used for current sensing and feedback in source-grounded configurations

Key Features

FeatureDesign Value
No secondary breakdownEnables safe linear-mode operation and robustness against short-circuit events without SOA derating
Low drive current requirementGate charge Qg ≈ 40 nC allows use of low-power gate drivers (e.g., TC4420) without external buffers
High-speed switchingCombined td(on)/tr/td(off)/tf < 205 ns supports efficient operation above 500 kHz in resonant converters
Body diode with trr = 320 nsPermits use in non-synchronous flyback and forward converters without external diode replacement
Isolated tab (TO-220FM)Eliminates need for insulating pads or shoulder washers when mounting to grounded heatsinks

Applications

Industrial Switching RegulatorsAC-DC Adapter Primary Side

Use Scenario: 200–300 W isolated flyback converter in factory automation PLC power supplies.

IC Role / Device Role / Timing Role: Main high-side switch controlling energy transfer from universal AC input to isolated DC output.

Use Value: 500 V VDSS accommodates 385 V DC link with margin; 0.7 Ω RDS(on) limits conduction loss to <3 W at full load.

Use Scenario: Compact 65 W laptop adapter with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side power switch synchronized to controller's gate drive signal at 100–130 kHz.

Use Value: Low Ciss/Coss ratio (1050/280 pF) improves ZVS initiation; 320 ns trr prevents reverse recovery failure during clamp reset.

DC-DC Boost ConvertersMotor Drive Half-Bridge Legs

Use Scenario: 48 V input to 380 V DC bus boost stage in solar microinverter front-end.

IC Role / Device Role / Timing Role: High-side boost switch operating in continuous conduction mode at 50–100 kHz.

Use Value: 7 A ID rating supports 10 A peak inductor current; no secondary breakdown ensures reliability under overload.

Use Scenario: 24 V BLDC motor driver for HVAC blowers with discrete half-bridge configuration.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair, driven by isolated gate driver.

Use Value: TO-220FM insulated tab simplifies heatsinking in compact enclosures; 95 ns td(off) enables precise PWM timing control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP5NK50ZFP500 V VDSS, 0.95 Ω RDS(on), 4.8 A ID, TO-220FP package (non-isolated tab)Limited to lower-current (<5 A) designs; requires insulating hardware for heatsink mountingSelect when cost sensitivity outweighs thermal performance; verify gate drive compatibility due to higher Qg (52 nC)
IXTP50N10P100 V VDSS, 0.022 Ω RDS(on), 50 A ID, TO-220 packageNot suitable for >100 V applications; intended for low-voltage, high-current motor drivesOnly viable in 12–48 V systems where 500 V rating is unnecessary; avoid for offline or industrial HV use

Compared with STP5NK50ZFP and IXTP50N10P, the 2SK1567-04-E delivers superior thermal efficiency in 300–500 V applications due to its lower RDS(on) and isolated TO-220FM package - enabling simpler thermal design and higher power density in space-constrained industrial converters.

Availability

2SK1567-04-E is available at Aetrix Electronics and suitable for industrial switching regulators, AC-DC adapters, DC-DC boost converters, and motor drive half-bridge legs requiring stable component supply and long-term production continuity.

Supply support for 2SK1567-04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK1567-04-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for high-reliability, high-voltage switching in industrial power conversion where ruggedness, SOA integrity, and thermal stability are prioritized over ultra-low RDS(on).

FAQ

What is the maximum continuous drain current rating for the 2SK1567-04-E?

The 2SK1567-04-E has a continuous drain current (ID) rating of 7 A at TC = 25°C. This value decreases with rising case temperature - derating to approximately 3.5 A at TC = 100°C per the power vs. temperature curve. Operation above this limit risks thermal runaway or bond-wire failure, especially under high-duty-cycle conditions.

Does the 2SK1567-04-E have an isolated heatsink tab?

Yes, the 2SK1567-04-E uses the TO-220FM package (RENESAS code PRSS0003AD-A), which features an electrically insulated metal tab. This allows direct mounting to a grounded heatsink without requiring mica washers or silicone pads - simplifying mechanical assembly and improving thermal interface reliability in high-voltage industrial equipment.

What is the gate threshold voltage range for the 2SK1567-04-E?

The gate-to-source cutoff voltage (VGS(off)) for the 2SK1567-04-E is specified from 2.0 V to 3.0 V at ID = 1 mA and VDS = 10 V. This ensures predictable turn-on behavior with standard 5 V or 10 V logic-level gate drivers while maintaining sufficient noise margin against spurious triggering in noisy industrial environments.

Can the 2SK1567-04-E be used in avalanche mode?

The 2SK1567-04-E is not characterized or guaranteed for repetitive avalanche operation. While its SOA curve includes single-pulse avalanche capability (per JEDEC JESD24-A), Renesas does not specify repetitive avalanche energy (EAS) or ruggedness ratings. For designs requiring repeated avalanche stress, a dedicated avalanche-rated MOSFET should be selected instead of relying on the 2SK1567-04-E.

What is the typical reverse recovery time of the body diode in the 2SK1567-04-E?

The body diode reverse recovery time (trr) of the 2SK1567-04-E is 320 ns under test conditions of IF = 7 A, dIF/dt = 100 A/µs, and VGS = 0. This parameter directly impacts switching losses and EMI in non-synchronous topologies - making it critical for selecting snubber components and setting minimum off-times in flyback or forward converters using the 2SK1567-04-E.

2SK1567-04-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK1567-04-E FAQ

1.How can I place an order for 2SK1567-04-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1567-04-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1567-04-E reliable?

The price and inventory of 2SK1567-04-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1567-04-E is usually 5 days.

3.What payment methods are accepted for 2SK1567-04-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1567-04-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1567-04-E?

2SK1567-04-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1567-04-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1567-04-E?

For technical support, including 2SK1567-04-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1567-04-E requirements.

6.How does Aetrix verify that 2SK1567-04-E is sourced from the original manufacturer or authorized distributors?

All 2SK1567-04-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1567-04-E meets industry standards.

7.What is the process for return or replacement of 2SK1567-04-E?

All 2SK1567-04-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1567-04-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1567-04-E part is unused and in its original packaging.

Return procedure for 2SK1567-04-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SK1567-04-E Tags

  • 2SK1567-04-E
  • 2SK1567-04-E PDF
  • 2SK1567-04-E Datasheet
  • 2SK1567-04-E Specifications
  • 2SK1567-04-E Images
  • Renesas
  • Renesas 2SK1567-04-E
  • Buy 2SK1567-04-E
  • 2SK1567-04-E Price
  • 2SK1567-04-E Distributor
  • 2SK1567-04-E Supplier
  • 2SK1567-04-E Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER