Renesas 2SK1567-E

Overview

2SK1567-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 500 V drain-to-source breakdown voltage, 0.7 Ω typical R_DS(on) at V_GS = 10 V and I_D = 4 A, 7 A continuous drain current, and TO-220FM package with isolated heatsink tab. Its low drive current requirement and absence of secondary breakdown support robust gate-driven hard-switching operation.

For engineers reviewing the 2SK1567-E datasheet, 2SK1567-E pinout, 2SK1567-E application, or 2SK1567-E equivalent, this page delivers verified electrical specs, thermal derating curves, switching timing data (t_d(on) = 15 ns, t_f = 40 ns), body diode recovery (t_rr = 320 ns), and safe operating area (SOA) limits - all critical for flyback, forward, and resonant converter design validation.

Technical Context

This device operates as a unidirectional high-voltage power switch with enhancement-mode gate control. Its channel temperature rating of 150°C and transient thermal impedance (θ_ch–c = 3.57°C/W) enable reliable operation under pulsed load conditions up to 28 A peak drain current (10 µs, 1% duty). The integrated body diode exhibits V_DF = 0.95 V at I_F = 7 A and reverse recovery time of 320 ns under di/dt = 100 A/µs.

The MOSFET's capacitance profile (C_iss = 1050 pF, C_oss = 280 pF, C_rss = 40 pF at V_DS = 10 V) supports optimized gate drive design for ZVS/ZCS topologies. Its transfer characteristic shows V_GS(off) between 2.0 V and 3.0 V, ensuring stable turn-off margin against noise in industrial power supplies.

Key Specifications

Pinout & Package

2SK1567-E uses the TO-220FM (RENESAS code PRSS0003AD-A) package with insulated metal tab for direct heatsink mounting and creepage/clearance compliance in AC-DC systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK50ZFP and IXTP50N10P, the 2SK1567-E uniquely combines 500 V rating, isolated TO-220FM packaging, and sub-1 Ω R_DS(on) - making it optimal for primary-side switching where safety isolation and thermal efficiency are jointly critical.

Availability

2SK1567-E is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED street lighting drivers requiring stable component supply and long-term production continuity.

Supply support for 2SK1567-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

The 2SK1567-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for ruggedized switching regulator and offline power supply applications demanding reliability under repetitive surge and thermal stress.

FAQ

What is the maximum continuous drain current rating for the 2SK1567-E?

The 2SK1567-E is rated for 7 A continuous drain current (I_D) at case temperature T_C = 25°C. This rating assumes adequate heatsinking and derates linearly above 25°C per the published thermal impedance curve - reaching zero at 150°C channel temperature. For sustained 7 A operation, thermal design must maintain T_C ≤ 25°C, typically requiring ≥10 cm² of 2 mm thick aluminum heatsink with thermal interface material.

Does the 2SK1567-E have an isolated package, and why does that matter?

Yes, the 2SK1567-E uses the TO-220FM package (RENESAS code PRSS0003AD-A) with electrically insulated metal tab. This isolation allows direct mounting to a grounded heatsink without additional insulating hardware, simplifying mechanical assembly and improving thermal reliability in AC-DC systems where primary-side grounding is mandatory for safety certification (e.g., UL 62368-1).

Can the 2SK1567-E replace the 2SK1566-E in existing designs?

Yes, the 2SK1567-E can directly replace the 2SK1566-E in most applications because both share identical TO-220FM packaging, pinout, and thermal characteristics. However, the 2SK1567-E has higher V_DSS (500 V vs. 450 V) and slightly higher R_DS(on) (0.7 Ω vs. 0.6 Ω typ.), offering improved voltage margin at minor conduction loss trade-off - beneficial in universal-input or surge-prone environments.

What is the gate-to-source threshold voltage range for the 2SK1567-E?

The 2SK1567-E has a gate-to-source cutoff voltage (V_GS(off)) range of 2.0 V to 3.0 V, measured at I_D = 1 mA and V_DS = 10 V. This threshold ensures reliable turn-off with standard 0 V gate drive while maintaining sufficient noise immunity - critical for stable operation in electrically noisy industrial power supplies where gate drive ringing could otherwise cause unintended conduction.

Is the body diode in the 2SK1567-E suitable for synchronous rectification?

The body diode in the 2SK1567-E is not optimized for synchronous rectification due to its relatively slow reverse recovery time (t_rr = 320 ns) and moderate forward voltage (V_DF = 0.95 V at 7 A). While functional in non-critical freewheeling roles, dedicated Schottky or MOSFET-based synchronous rectifiers are recommended for high-efficiency, high-frequency (>200 kHz) designs where diode conduction and recovery losses dominate system efficiency.