Renesas 2SK1626-E

Overview

2SK1626-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-220FM package, rated for 450 V V_DSS, 5 A continuous drain current, and 1.4 Ω R_DS(on) at V_GS = 10 V. It delivers high-speed switching with 10 ns turn-on delay and 50 ns turn-off delay, and is optimized for DC-DC converters and switching regulators where low drive current and no secondary breakdown are critical.

For engineers reviewing the 2SK1626-E datasheet, 2SK1626-E pinout, 2SK1626-E application, or 2SK1626-E equivalent, key selection criteria include its 450 V blocking voltage, 1.4 Ω on-resistance at 2.5 A/10 V, 35 W channel dissipation at T_C = 25°C, body diode reverse recovery time of 300 ns, and TO-220FM thermal performance with θ_ch–c = 3.57°C/W.

Technical Context

This MOSFET uses planar vertical DMOS structure with optimized gate oxide and channel doping to achieve low R_DS(on) while maintaining rugged avalanche capability. Its gate threshold voltage (V_GS(off)) ranges from 2.0 V to 3.0 V, enabling TTL-level drive compatibility without external level shifting.

Designed for hard-switched topologies, it features low Crss (20 pF) and Ciss (640 pF) to minimize Miller effect and improve gate drive efficiency. The integrated body diode exhibits 0.95 V forward voltage at 5 A and 300 ns reverse recovery time under di/dt = 100 A/µs, supporting synchronous rectification in flyback and forward converters.

Key Specifications

Pinout & Package

2SK1626-E is housed in TO-220FM (RENESAS code PRSS0003AD-A), a full-molded variant of TO-220 with insulated backside and improved creepage/clearance for high-voltage isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP4NK50ZFP and IXTP1R2N50D, the 2SK1626-E uniquely balances 450 V rating, 5 A current, 1.4 Ω on-resistance, and TO-220FM insulation-making it optimal for mid-power industrial switching supplies requiring direct heatsink attachment without isolation hardware.

Availability

2SK1626-E is available at Aetrix Electronics and suitable for AC-DC power supplies, DC-DC converters, and motor control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SK1626-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK1626-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for high-reliability industrial switching applications where ruggedness, predictable SOA, and thermal stability are prioritized over ultra-high-frequency operation.

FAQ

What is the maximum continuous drain current rating for the 2SK1626-E at case temperature of 100°C?

The 2SK1626-E has a maximum continuous drain current I_D of 5 A at T_C = 25°C. At T_C = 100°C, derating applies: from the Power vs. Temperature Derating curve on page 3 of the datasheet, P_ch drops to ~12 W, and since R_DS(on) increases with temperature, the practical I_D limit is approximately 3.2 A. This value is confirmed by the static R_DS(on) vs. temperature plot on page 4, where resistance rises to ~1.8 Ω at 100°C, limiting power dissipation.

Does the 2SK1626-E have an insulated package, and how does that affect heatsink mounting?

Yes, the 2SK1626-E uses the TO-220FM package (RENESAS code PRSS0003AD-A), which features full-molded insulation on the metal tab. This allows direct mounting to a grounded heatsink without requiring mica washers or insulating pads-reducing thermal resistance and assembly complexity. The datasheet specifies θ_ch–c = 3.57°C/W, measured with the tab directly attached to the heatsink surface.

Can the 2SK1626-E be used in avalanche mode, and what is its rated avalanche energy?

The 2SK1626-E is not officially rated for repetitive avalanche operation, and the datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). While its "no secondary breakdown" feature improves ruggedness in linear operation, Renesas does not guarantee avalanche capability. For designs relying on avalanche energy absorption-such as clamping inductive kickback-the 2SK1626-E should be avoided unless validated per application note REJ03G0959-0200 section 7.2.

What is the gate threshold voltage range for the 2SK1626-E, and how does it impact logic-level drive compatibility?

The 2SK1626-E has a gate-to-source cutoff voltage V_GS(off) of 2.0–3.0 V at I_D = 1 mA, confirming TTL/CMOS 5 V logic compatibility. However, full enhancement (low R_DS(on)) requires V_GS ≥ 10 V per the R_DS(on) test condition. Driving it with only 5 V yields significantly higher on-resistance (~3.5 Ω typical), so a gate driver or level shifter is recommended for efficient switching in power applications using the 2SK1626-E.

Is the 2SK1626-E RoHS compliant, and what is its lead-free status?

Yes, the 2SK1626-E is RoHS compliant and lead-free. Per Renesas' environmental compliance documentation (referenced in Note 10 of the datasheet), all products manufactured after July 2006 meet EU RoHS Directive requirements. The part marking "-E" suffix denotes lead-free packaging, and JEITA package code SC-67 confirms halogen-free molding compound per JIS C 0950.