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Renesas 2SK1628-E
- Part No.:
- 2SK1628-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1628-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,302
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Product details
Overview
2SK1628-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-3PL package, designed for high-speed switching applications with 450 V drain-to-source breakdown voltage, 30 A continuous drain current, and 0.20–0.25 Ω static on-resistance at VGS = 10 V. It serves as a primary switching element in DC-DC converters and switching regulators where low conduction loss and fast turn-on/turn-off are critical.
For engineers reviewing the 2SK1628-E datasheet, 2SK1628-E pinout, 2SK1628-E application, or 2SK1628-E equivalent, this device is evaluated for high-voltage, medium-current power conversion stages requiring robust thermal performance (200 W channel dissipation), low gate drive demand, and immunity to secondary breakdown-key selection criteria for industrial SMPS and motor drive half-bridge legs.
Technical Context
The 2SK1628-E employs a planar vertical DMOS structure optimized for rugged high-voltage operation, featuring a body diode with 1.1 V forward voltage and 600 ns reverse recovery time under 30 A, 100 A/µs di/dt conditions. Its gate threshold voltage of 2.0–3.0 V enables TTL-level drive compatibility while maintaining noise immunity.
Thermal design is supported by a channel-to-case thermal resistance of 0.625°C/W and transient thermal impedance curves validated for pulse widths from 10 µs to 100 ms. The device operates up to 150°C channel temperature and supports safe operating area (SOA) compliance at DC, 1 ms, and 10 ms pulse durations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - Maximum blocking voltage in off-state; suitable for 380 V AC rectified bus applications with margin. |
| RDS(on) | 0.20–0.25 Ω @ VGS = 10 V, ID = 15 A - Low conduction loss enabling <1.5 W I²R loss at 30 A peak. |
| td(on)/tr/td(off)/tf | 32/140/200/100 ns - Fast switching enables >100 kHz operation in hard-switched topologies. |
| Ciss/Coss/Crss | 2800/780/90 pF @ VDS = 10 V - Low Crss minimizes Miller-induced shoot-through risk in bridge configurations. |
| |yfs| | 12–20 S @ ID = 15 A - High transconductance ensures stable gain and predictable gate drive current demand. |
| VGS(off) | 2.0–3.0 V - Defined turn-off threshold allows reliable gate control with standard logic-level drivers. |
| Pch | 200 W @ TC = 25°C - Enables high-power density designs when mounted on heatsink with adequate thermal interface. |
Pinout & Package
2SK1628-E is housed in the TO-3PL (RENESAS code PRSS0004ZF-A) metal-can package with isolated tab, offering high thermal conductivity and mechanical robustness for industrial power modules. The case serves as the Drain terminal, enabling direct heatsink mounting without insulating washers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V rating and low-impedance drive for fast transitions. |
| 2 (Drain) | Main power output / high-side switch node | Connected to high-voltage rail or transformer primary; electrically tied to metal case for thermal path and must be insulated from heatsink if floating topology. |
| 3 (Source) | Power return / reference node | Serves as common return for load current and gate drive reference; layout must minimize inductance to suppress ringing during switching. |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables reliable operation under high-voltage, high-current pulse conditions without SOA derating constraints typical of bipolar transistors. |
| Low drive current requirement | Gate charge Qg ≈ 200 nC (typ.) at VDS = 100 V - reduces driver IC stress and PCB trace losses in high-frequency designs. |
| Integrated body diode | VDF = 1.1 V @ 30 A - supports synchronous rectification or freewheeling paths without external diode in buck or flyback topologies. |
| High-speed switching | Combined switching time (td(on)+tr+td(off)+tf) < 500 ns - minimizes transition losses and improves efficiency above 50 kHz. |
| Thermal stability | Positive RDS(on) temperature coefficient - provides inherent current sharing in parallel configurations and prevents thermal runaway. |
Applications
| Industrial Switching Power Supplies | DC-DC Converters for Telecom |
|---|---|
|
Use Scenario: Primary-side switch in 500–1000 W offline AC-DC power supplies with universal input (85–264 V AC). IC Role / Device Role / Timing Role: High-voltage power switch in forward or half-bridge topology, operating at 50–100 kHz with zero-voltage switching assist. Use Value: 450 V VDSS and 0.25 Ω RDS(on) enable >92% efficiency at full load while maintaining SOA margin across line and load transients. |
Use Scenario: Isolated DC-DC brick converter (48 V input to 12 V/24 V output) for base station power distribution. IC Role / Device Role / Timing Role: Primary-side FET in phase-shifted full-bridge configuration, synchronized to controller timing signals. Use Value: Fast 140 ns rise time and low Crss reduce dead-time losses and improve light-load regulation without compromising EMI performance. |
| Motor Drive Half-Bridge Legs | Uninterruptible Power Supply (UPS) Inverters |
|
Use Scenario: Upper/lower switch in 3-phase inverter stage for HVAC compressors or industrial pumps (1–3 kW range). IC Role / Device Role / Timing Role: Medium-power switching element controlled by isolated gate driver, handling PWM-modulated 30 A peak currents. Use Value: Robust 120 A pulsed drain current rating and 150°C channel temperature tolerance support overload and stall protection without thermal shutdown. |
Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 V AC from battery-backed DC bus. IC Role / Device Role / Timing Role: High-reliability power switch in inverter leg, operating continuously at 50/60 Hz with overcurrent fault handling. Use Value: No secondary breakdown behavior and 200 W channel dissipation ensure stable operation during sustained overload or short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDSS, 4.5 A ID, TO-220FP package, RDS(on) = 1.4 Ω - lower current rating, smaller package, higher on-resistance. | Targeted at <200 W applications; unsuitable for 30 A continuous conduction without paralleling. | Select only for space-constrained, lower-power replacements where thermal budget permits higher RDS(on) loss. |
| IXTH30N50L | 500 V VDSS, 30 A ID, TO-247 package, RDS(on) = 0.18 Ω - slightly lower on-resistance but no integrated body diode optimization. | Lacks specified trr and VDF data; requires external diode for freewheeling in inductive loads. | Prefer when ultimate conduction efficiency is prioritized over body diode performance and layout simplicity. |
Compared with STP4NK50ZFP and IXTH30N50L, the 2SK1628-E uniquely balances 450 V rating, 30 A capability, low RDS(on), and characterized body diode performance in a thermally efficient TO-3PL package-making it optimal for industrial SMPS and motor drives where reliability under pulse stress is non-negotiable.
Availability
2SK1628-E is available at Aetrix Electronics and suitable for industrial switching power supplies, DC-DC converters for telecom infrastructure, and motor drive half-bridge legs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 2SK1628-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SK1628-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching regulator and DC-DC converter applications in industrial equipment.
FAQ
What is the maximum continuous drain current rating for the 2SK1628-E?
The 2SK1628-E has a continuous drain current (ID) rating of 30 A at TC = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature-down to zero at 150°C channel temperature. Actual usable current depends on PCB layout, thermal interface, and ambient conditions; for sustained 30 A operation, a heatsink maintaining TC ≤ 75°C is recommended. The 2SK1628-E datasheet confirms this value in the Absolute Maximum Ratings table on page 1.
Does the 2SK1628-E include an integrated body diode, and what are its key parameters?
Yes, the 2SK1628-E integrates a body diode with a forward voltage (VDF) of 1.1 V at IF = 30 A and VGS = 0, and a reverse recovery time (trr) of 600 ns under di/dt = 100 A/µs. These values are measured and specified in the Electrical Characteristics table on page 2 of the 2SK1628-E datasheet. The diode enables freewheeling in inductive loads and simplifies designs like buck converters without requiring an external diode.
What is the gate-to-source voltage limit for the 2SK1628-E, and why is it important?
The 2SK1628-E specifies a gate-to-source voltage (VGS) limit of ±30 V in its Absolute Maximum Ratings. Exceeding this can cause irreversible gate oxide damage. The device's gate threshold voltage (VGS(off)) is 2.0–3.0 V, meaning it turns fully on near 10 V-so practical gate drive should stay within 0–15 V with transient clamping. This ±30 V rating defines the safe window for ESD protection and driver circuit design in the 2SK1628-E application.
How does the 2SK1628-E's Safe Operating Area (SOA) compare to standard bipolar transistors?
Unlike bipolar transistors, the 2SK1628-E exhibits no secondary breakdown limitation due to its MOSFET structure-its SOA is defined solely by thermal limits and peak voltage/current boundaries. The datasheet provides SOA curves on page 3 showing DC, 10 ms, and 100 µs operation envelopes. This eliminates the need for SOA derating in pulse applications and makes the 2SK1628-E more robust than BJTs in switching regulator outputs or motor drive legs.
Is the 2SK1628-E RoHS compliant, and what is its quality grade classification?
Yes, the 2SK1628-E complies with EU RoHS Directive requirements, as confirmed by Renesas' environmental compliance documentation. Per Renesas' quality grading system (page 1, Note 7), the 2SK1628-E is classified as "Standard" grade-intended for industrial, office, and communications equipment-not for safety-critical or life-support applications. Its recommended use includes switching regulators, DC-DC converters, and motor drives in non-automotive industrial systems.
2SK1628-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1628-E FAQ
1.How can I place an order for 2SK1628-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1628-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1628-E reliable?
The price and inventory of 2SK1628-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1628-E is usually 5 days.
3.What payment methods are accepted for 2SK1628-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1628-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1628-E?
2SK1628-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1628-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1628-E?
For technical support, including 2SK1628-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1628-E requirements.
6.How does Aetrix verify that 2SK1628-E is sourced from the original manufacturer or authorized distributors?
All 2SK1628-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1628-E meets industry standards.
7.What is the process for return or replacement of 2SK1628-E?
All 2SK1628-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1628-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1628-E part is unused and in its original packaging.
Return procedure for 2SK1628-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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