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Renesas 2SK1636L-E
- Part No.:
- 2SK1636L-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1636L-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,015
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Product details
Overview
2SK1636L-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It delivers 15 A continuous drain current, 250 V drain-source breakdown voltage, and a typical RDS(on) of 0.22 Ω at VGS = 10 V, enabling efficient high-power conversion in compact industrial power supplies.
For engineers reviewing the 2SK1636L-E datasheet, 2SK1636L-E pinout, 2SK1636L-E application, or 2SK1636L-E equivalent, this device is selected for its low drive current requirement, absence of secondary breakdown, and fast switching performance (td(off) = 110 ns, tf = 60 ns) in hard-switched topologies where thermal stability and gate drive simplicity are critical.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for ruggedness and stable operation under repetitive avalanche stress. Its gate threshold voltage range (2.0–3.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, while the integrated body diode supports synchronous rectification and freewheeling paths.
The LDPAK(L) package (PRSS0004AE-A) provides low thermal resistance (θch–c = 1.67°C/W) and dual-drain terminals to reduce source inductance-critical for minimizing switching losses and voltage overshoot in high-di/dt applications like buck converters operating above 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Supports input rails up to 200 V DC in offline or industrial DC-DC stages without derating. |
| RDS(on) | 0.22 Ω (typ) at VGS = 10 V - Enables ≤3.5 W conduction loss at 9 A, reducing heatsink requirements. |
| ID | 15 A (continuous) - Sustains full-load current in 100–300 W power modules without pulse limitation. |
| td(off)/tf | 110 ns / 60 ns - Limits switching energy loss to <15 µJ per cycle at 200 kHz, improving efficiency above 92%. |
| Ciss/Coss | 1250 pF / 510 pF - Predictable Miller plateau behavior enables stable gate drive design with minimal snubbing. |
| VGS(th) | 2.0–3.0 V - Ensures clean turn-on with microcontroller GPIOs or low-voltage PWM controllers without level-shifting. |
| Qg | Not specified in provided data - Gate charge must be verified from latest Renesas characterization curves for driver sizing. |
Pinout & Package
2SK1636L-E uses the LDPAK(L) surface-mount package (Renesas code PRSS0004AE-A), featuring a thermally enhanced leadframe with dual drain terminals for low-inductance PCB layout and improved thermal transfer to copper planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 0–10 V logic-level signals; requires ≤±10 µA leakage current budget. |
| 2 (D) | Drain (Terminal 1) | Main high-side switching node; electrically tied to Pin 4; connects to input rail or transformer primary. |
| 3 (S) | Source | Power ground reference for gate drive and current sensing; low-inductance return path critical for EMI control. |
| 4 (D) | Drain (Terminal 2) | Second drain connection-must be paralleled with Pin 2 on PCB to minimize loop inductance and voltage spikes. |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe operation in linear mode or overload conditions without SOA derating constraints. |
| Low drive current requirement | Reduces gate driver power consumption and simplifies selection of low-cost SOT-23 MOSFET drivers. |
| High-speed switching (tr = 85 ns) | Supports >500 kHz PWM frequencies in resonant or ZVS topologies with minimal dead-time penalty. |
| Integrated body diode (VDF = 1.0 V) | Provides controlled freewheeling path with 400 ns reverse recovery time-suitable for non-synchronous rectification. |
| Thermal robustness (Tch = 150°C) | Permits sustained operation in enclosed industrial enclosures up to 85°C ambient with minimal airflow. |
Applications
| Industrial DC-DC Converters | Switching Regulators |
|---|---|
|
Use Scenario: Step-down conversion from 48 V bus to 12 V/5 V in programmable logic controllers and I/O modules. IC Role / Device Role / Timing Role: Main power switch in synchronous buck topology operating at 200–300 kHz. Use Value: Low RDS(on) and fast switching reduce total power loss to <4 W, enabling convection-cooled designs. |
Use Scenario: Isolated flyback power supply for sensor transmitters in hazardous-area instrumentation. IC Role / Device Role / Timing Role: Primary-side switching element handling 250 V reflected output voltage and 15 A peak current. Use Value: 250 V VDSS margin allows safe operation with 100% overvoltage transients per IEC 61000-4-5. |
| Motor Drive Half-Bridges | LED Constant-Current Drivers |
|
Use Scenario: High-side switch in 24 V BLDC motor gate driver stage for HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap circuit; operates with 10 V gate drive. Use Value: 2.0–3.0 V VGS(th) ensures reliable turn-on even with bootstrap droop down to 7 V. |
Use Scenario: Series-pass switch in constant-current LED driver for street lighting with 100–200 V input. IC Role / Device Role / Timing Role: Linear-regulated current sink modulated at 1–10 kHz for dimming control. Use Value: Absence of secondary breakdown permits safe linear-mode operation during PWM dimming transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP15N25P | Higher RDS(on) (0.32 Ω), TO-220 package, no dual drain terminals | Limited to lower-frequency (<100 kHz) applications due to higher switching losses and larger footprint | Choose when through-hole mounting and legacy board compatibility are required over thermal performance. |
| STP16NF25 | Same VDSS (250 V), but higher RDS(on) (0.28 Ω) and slower td(off) (180 ns); TO-220FP package | Requires larger heatsink and more aggressive gate drive for equivalent switching speed | Select only if existing STMicro design reuse is prioritized and efficiency targets allow ≥0.5% loss increase. |
Compared with IXTP15N25P and STP16NF25, the 2SK1636L-E offers superior thermal performance via LDPAK(L) packaging and faster switching-enabling smaller magnetics, reduced EMI filtering, and higher power density in space-constrained industrial SMPS designs.
Availability
2SK1636L-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, switching regulators, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for 2SK1636L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SK1636L-E belongs to Renesas' legacy power MOSFET product line engineered specifically for high-reliability industrial power conversion-emphasizing ruggedness, thermal stability, and ease of gate drive integration.
FAQ
What is the maximum continuous drain current rating for the 2SK1636L-E?
The 2SK1636L-E is rated for 15 A continuous drain current (ID) at TC = 25°C. This rating assumes proper PCB copper area and thermal management per the LDPAK(L) package's 1.67°C/W channel-to-case thermal resistance. At elevated case temperatures, derating applies per the Power vs. Temperature Derating curve on page 3 of the datasheet.
Does the 2SK1636L-E have a built-in body diode, and what are its key parameters?
Yes, the 2SK1636L-E integrates a body diode with a forward voltage (VDF) of 1.0 V at IF = 15 A and reverse recovery time (trr) of 400 ns under specified test conditions (diF/dt = 100 A/µs). This diode supports freewheeling and synchronous rectification but is not optimized for ultra-fast recovery applications.
What is the gate-to-source voltage limit for the 2SK1636L-E, and why is it important?
The 2SK1636L-E specifies a gate-to-source voltage limit (VGSS) of ±30 V. Exceeding this can permanently damage the gate oxide. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) and avoid ringing-induced overshoot-especially critical in high-di/dt layouts where parasitic inductance couples into the gate loop.
How does the dual-drain configuration of the 2SK1636L-E improve performance in switching applications?
The dual-drain terminals (Pins 2 and 4) in the 2SK1636L-E reduce effective source inductance by splitting high-current return paths. This minimizes voltage spikes during turn-off, improves switching waveform fidelity, and lowers EMI generation-particularly beneficial in high-frequency buck or half-bridge converters where layout parasitics dominate losses.
Is the 2SK1636L-E suitable for use in automotive applications?
No-the 2SK1636L-E is classified as a "Standard" quality grade device per Renesas documentation and is intended for industrial equipment, office systems, and communications gear. It is not qualified for automotive use (e.g., AEC-Q101), nor approved for safety-critical or life-support applications per Renesas' quality grade policy.
2SK1636L-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1636L-E FAQ
1.How can I place an order for 2SK1636L-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1636L-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1636L-E reliable?
The price and inventory of 2SK1636L-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1636L-E is usually 5 days.
3.What payment methods are accepted for 2SK1636L-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1636L-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1636L-E?
2SK1636L-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1636L-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1636L-E?
For technical support, including 2SK1636L-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1636L-E requirements.
6.How does Aetrix verify that 2SK1636L-E is sourced from the original manufacturer or authorized distributors?
All 2SK1636L-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1636L-E meets industry standards.
7.What is the process for return or replacement of 2SK1636L-E?
All 2SK1636L-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1636L-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1636L-E part is unused and in its original packaging.
Return procedure for 2SK1636L-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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