Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 2SK1636STR-E

Part No.:
2SK1636STR-E
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK1636STR-E.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:940

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SK1636STR-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It delivers 15 A continuous drain current, 250 V drain-to-source breakdown voltage, and a typical RDS(on) of 0.22 Ω at VGS = 10 V, enabling efficient low-loss operation in compact power stages.

For engineers reviewing the 2SK1636STR-E datasheet, 2SK1636STR-E pinout, 2SK1636STR-E application, or 2SK1636STR-E equivalent, key selection criteria include its LDPAK(S)-(1) package thermal performance, 110 ns turn-off delay time, body diode reverse recovery time of 400 ns, and suitability for high-frequency synchronous rectification and industrial SMPS designs.

Technical Context

This MOSFET employs a planar vertical DMOS structure with no secondary breakdown limitation, supporting robust pulsed operation up to 60 A (10 µs, 1% duty). Its gate threshold voltage range of 2.0–3.0 V ensures reliable TTL/CMOS-level drive compatibility while maintaining noise immunity.

The integrated body diode exhibits 1.0 V forward voltage at 15 A and 400 ns reverse recovery time under di/dt = 100 A/µs, making it suitable for freewheeling paths where controlled reverse recovery is critical to minimize switching loss and EMI.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS250 V - Supports input rails up to 200 V DC with safety margin in offline or industrial DC-DC applications.
ID (continuous)15 A at TC = 25°C - Enables use in medium-power switch-mode supplies without forced air cooling.
RDS(on)0.22 Ω typ. @ VGS = 10 V - Delivers ≤ 49 W conduction loss at 15 A, reducing heatsink requirements.
td(off)110 ns - Allows stable operation at switching frequencies up to ~500 kHz in hard-switched topologies.
Ciss1250 pF - Determines gate drive energy requirement (~6.25 µC at 10 V), influencing driver IC selection.
trr400 ns - Limits usable frequency in asynchronous flyback or buck converters due to diode tail current.
Pch75 W @ TC = 25°C - Defines maximum steady-state power dissipation before thermal derating applies.

Pinout & Package

2SK1636STR-E uses the LDPAK(S)-(1) surface-mount package (Renesas code PRSS0004AE-B), featuring enhanced thermal resistance (θch–c = 1.67°C/W) and optimized leadframe layout for high-current PCB routing.

Pin/Terminal Circuit Role Design Meaning
1 (G)GateControl terminal requiring ≤ ±10 µA leakage; driven by 10 V logic for full enhancement.
2 (D)DrainMain high-side power node; electrically connected to exposed drain pad for thermal and current path integrity.
3 (S)SourceReference node for gate drive; tied to power ground in low-side configurations.
4 (D)Drain (redundant)Second drain connection for parallel current handling and improved thermal spreading across PCB copper.

Key Features

Feature Design Value
No secondary breakdownEnables safe operation under high-voltage/high-current pulse conditions without SOA derating curves.
Low RDS(on)0.22 Ω typ. reduces I²R losses in 12–48 V output stages, improving efficiency by ≥1.2% at 10 A load.
High-speed switching24 ns turn-on delay + 85 ns rise time supports >300 kHz PWM in isolated DC-DC converters.
Low drive currentGate charge Qg ≈ 40 nC enables direct drive from microcontroller GPIOs or low-power gate drivers.
Integrated body diode15 A rated reverse diode with 400 ns trr eliminates need for external freewheeling diode in non-synchronous topologies.

Applications

Industrial DC-DC Converters Switching Regulators

Use Scenario: Step-down conversion from 200 V DC bus to 24 V for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary switching element in hard-switched buck topology operating at 250 kHz.

Use Value: 0.22 Ω RDS(on) limits conduction loss to 49 W at full load, enabling convection-cooled design.

Use Scenario: High-efficiency 12 V → 3.3 V point-of-load regulator in telecom shelf management units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with gate driven by dedicated controller.

Use Value: 400 ns body diode trr minimizes reverse recovery loss during dead-time, improving light-load efficiency.

Motor Drive Half-Bridge UPS Inverter Stages

Use Scenario: 1 kW BLDC motor phase-leg switching in HVAC compressor drives.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter with bootstrap gate drive.

Use Value: 250 V VDSS withstands 180 V DC link plus 40 V switching spikes, meeting IEC 61800-3 surge requirements.

Use Scenario: Bidirectional DC-AC stage in online double-conversion UPS systems.

IC Role / Device Role / Timing Role: Unidirectional power switch in H-bridge output stage.

Use Value: 15 A ID rating supports 1.2 kVA output with 1.5× peak current margin for battery surge loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP15N25PHigher RDS(on) (0.32 Ω), TO-220 package, 250 V ratingLarger footprint, higher thermal resistance (θJA = 62°C/W vs. LDPAK's 40°C/W)Preferred where through-hole assembly or legacy board compatibility is required.
IRF640NPBFLower VDSS (200 V), similar RDS(on) (0.18 Ω), TO-220FP packageNot rated for 200 V DC bus applications; unsuitable for industrial offline inputsSelect only for sub-160 V DC systems where cost sensitivity outweighs voltage margin needs.

Compared with IXTP15N25P and IRF640NPBF, the 2SK1636STR-E provides superior thermal performance in surface-mount layouts, tighter VGS(off) control for predictable turn-on, and guaranteed 250 V blocking-critical for reliability in unregulated industrial power rails.

Availability

2SK1636STR-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, switching regulators, and motor drive half-bridge circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 2SK1636STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK1636STR-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK1636STR-E?

The 2SK1636STR-E is rated for 15 A continuous drain current at case temperature TC = 25°C. This rating decreases with rising case temperature per the derating curve in the datasheet, reaching approximately 7.5 A at TC = 100°C. The 2SK1636STR-E must be mounted on a PCB with adequate copper area to maintain thermal performance within specification.

Does the 2SK1636STR-E have a built-in body diode, and what are its key parameters?

Yes, the 2SK1636STR-E integrates a body diode rated for 15 A reverse current with a forward voltage of 1.0 V at IF = 15 A and reverse recovery time of 400 ns under di/dt = 100 A/µs. This diode is intrinsic to the MOSFET structure and enables freewheeling operation in buck or flyback topologies without an external diode. The 2SK1636STR-E body diode characteristics are fully specified in the Electrical Characteristics table.

What package type does the 2SK1636STR-E use, and how does it differ from the 2SK1636L-E variant?

The 2SK1636STR-E uses the LDPAK(S)-(1) surface-mount package (Renesas code PRSS0004AE-B), while the 2SK1636L-E uses LDPAK(L) (PRSS0004AE-A). Both share identical electrical specs, but the LDPAK(S)-(1) has a smaller outline and lower mass (1.30 g vs. 1.40 g), optimized for automated pick-and-place and higher-density layouts. The 2SK1636STR-E designation confirms tape-and-reel packaging for SMT production.

Is the 2SK1636STR-E suitable for automotive applications?

No-the 2SK1636STR-E is classified as a Standard-grade Renesas product intended for industrial, office, and communications equipment per Quality Grade documentation. It is not qualified to AEC-Q101 or rated for automotive temperature ranges (–40°C to +150°C junction). For automotive use, Renesas offers separate AEC-Q101-qualified MOSFETs; the 2SK1636STR-E should not be deployed in safety-critical or vehicle-mounted systems.

What is the gate threshold voltage range for the 2SK1636STR-E, and how does it affect drive circuit design?

The 2SK1636STR-E has a gate-to-source cutoff voltage VGS(off) range of 2.0–3.0 V, measured at ID = 1 mA. This ensures full enhancement at VGS ≥ 10 V while allowing reliable turn-off with logic-level gate drive. Designers must ensure gate drive voltage exceeds 3.0 V to avoid linear-mode operation and thermal runaway; the 2SK1636STR-E performs optimally with 10–15 V gate drive in switching applications.

2SK1636STR-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK1636STR-E FAQ

1.How can I place an order for 2SK1636STR-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1636STR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1636STR-E reliable?

The price and inventory of 2SK1636STR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1636STR-E is usually 5 days.

3.What payment methods are accepted for 2SK1636STR-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1636STR-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1636STR-E?

2SK1636STR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1636STR-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1636STR-E?

For technical support, including 2SK1636STR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1636STR-E requirements.

6.How does Aetrix verify that 2SK1636STR-E is sourced from the original manufacturer or authorized distributors?

All 2SK1636STR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1636STR-E meets industry standards.

7.What is the process for return or replacement of 2SK1636STR-E?

All 2SK1636STR-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1636STR-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1636STR-E part is unused and in its original packaging.

Return procedure for 2SK1636STR-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SK1636STR-E Tags

  • 2SK1636STR-E
  • 2SK1636STR-E PDF
  • 2SK1636STR-E Datasheet
  • 2SK1636STR-E Specifications
  • 2SK1636STR-E Images
  • Renesas
  • Renesas 2SK1636STR-E
  • Buy 2SK1636STR-E
  • 2SK1636STR-E Price
  • 2SK1636STR-E Distributor
  • 2SK1636STR-E Supplier
  • 2SK1636STR-E Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER