Renesas 2SK1667-E
- Part No.:
- 2SK1667-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1667-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:1,448
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Product details
Overview
2SK1667-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It delivers 7 A continuous drain current, 250 V drain-source breakdown voltage, and 0.4 Ω typical RDS(on) at VGS = 10 V, with TO-220AB package thermal performance enabling stable operation up to 150°C channel temperature.
For engineers reviewing the 2SK1667-E datasheet, 2SK1667-E pinout, 2SK1667-E application, or 2SK1667-E equivalent, this device is selected for high-efficiency, medium-voltage power conversion where low conduction loss, fast turn-on/turn-off (13 ns / 65 ns), and robust body diode recovery (180 ns) are critical design requirements.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low gate charge (Qg ≈ 40 nC) and minimized output capacitance (Coss = 265 pF), supporting high-frequency PWM operation without excessive switching losses. Its gate threshold voltage range (2.0–3.0 V) ensures reliable enhancement-mode turn-on while maintaining noise immunity under transient conditions.
The integrated body diode exhibits 1.0 V forward voltage at 7 A and 180 ns reverse recovery time under di/dt = 100 A/µs - characteristics validated for synchronous rectification and freewheeling in non-isolated buck topologies. No secondary breakdown limitation allows safe operation across the full SOA curve up to 10 µs pulse width.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - supports input rails up to 200 V DC with 25% safety margin in industrial SMPS designs |
| RDS(on) (typ) | 0.4 Ω at VGS = 10 V - enables ≤1.12 W conduction loss at 7 A, reducing heatsink requirements |
| td(on)/td(off) | 13 ns / 65 ns - permits >1 MHz switching in hard-switched converters with minimal dead-time overhead |
| Ciss/Coss | 690 pF / 265 pF - low input/output capacitance improves gate drive efficiency and EMI profile |
| trr | 180 ns - enables use as freewheeling diode in 300 kHz–500 kHz buck converters without snubbers |
| Pch | 50 W at TC = 25°C - supports 3.5 W dissipation at 100°C case temperature via standard TO-220 heatsinking |
| VGS(th) | 2.0–3.0 V - ensures clean turn-on with logic-level gate drivers (e.g., 3.3 V or 5 V microcontroller outputs) |
Pinout & Package
2SK1667-E uses the TO-220AB package (RENESAS code PRSS0004AC-A), with metal flange electrically connected to Drain for direct heatsink mounting and thermal management. The three-terminal configuration supports high-current PCB layouts with minimal parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate (G) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires <10 µA leakage current handling |
| 2 - Drain (D) | High-side power terminal | Connected to flange and heatsink; carries full load current and withstands 250 V potential relative to Source |
| 3 - Source (S) | Reference and return path | Serves as common reference for gate drive and load return; defines ground-referenced control loop in low-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.4 Ω typ reduces I²R losses by >30% vs. comparable 200 V MOSFETs, directly improving converter efficiency at 5–10 A loads |
| No secondary breakdown | Enables safe operation across entire Safe Operating Area (SOA) without derating for pulse width or voltage/current combinations |
| Fast switching | 13 ns turn-on delay + 55 ns rise time minimizes overlap loss in synchronous rectifiers operating above 300 kHz |
| Integrated body diode | 180 ns trr and 1.0 V VDF allow use as freewheeling element in non-isolated topologies without external Schottky replacement |
| Low drive current | Gate leakage ≤±10 µA at ±25 V enables direct drive from microcontroller GPIO pins without buffer stages |
Applications
| DC-DC Buck Converter | Switching Regulator |
|---|---|
|
Use Scenario: Step-down conversion from 48 V industrial bus to 12 V intermediate rail in programmable logic controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 400 kHz with 5 A average current. Use Value: 0.4 Ω RDS(on) limits conduction loss to 1.0 W, enabling natural convection cooling and eliminating fan dependency. |
Use Scenario: Primary-side high-voltage switch in isolated flyback power supply for telecom line cards (input 36–72 V DC). IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into transformer primary winding. Use Value: 250 V VDSS provides 20% margin over 72 V × √2 surge, ensuring reliability during line transients. |
| Motor Drive Half-Bridge | LED Constant-Current Driver |
|
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for automated warehouse conveyors. IC Role / Device Role / Timing Role: PWM-controlled current path enabling bidirectional torque control at 20 kHz switching frequency. Use Value: 28 A peak drain current rating accommodates 5× motor stall current without SOA violation. |
Use Scenario: Series-pass switch regulating constant 350 mA current through high-brightness LED strings in street lighting fixtures. IC Role / Device Role / Timing Role: Linear-mode current regulator operating in analog dimming mode with 100 Hz–1 kHz PWM envelope. Use Value: 150°C max channel temperature rating supports sealed outdoor enclosure operation up to 85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NK25Z | 250 V VDSS, 7 A ID, but higher RDS(on) = 0.44 Ω (typ) and slower td(off) = 110 ns | Less suitable for >300 kHz switching due to higher switching losses and reduced SOA margin at high di/dt | Acceptable for cost-sensitive 100–200 kHz flyback supplies where thermal headroom exists |
| IRF640NPbF | 200 V VDSS, 18 A ID, RDS(on) = 0.18 Ω (typ), but Ciss = 1000 pF and no specified trr | Not rated for 200+ V bus applications; body diode unrecommended for high-di/dt freewheeling | Only viable in lower-voltage (<150 V) half-bridge motor drives where gate drive strength outweighs voltage margin needs |
Compared with STP7NK25Z and IRF640NPbF, the 2SK1667-E offers superior combination of 250 V rating, 0.4 Ω on-resistance, and verified 180 ns body diode recovery - making it uniquely suited for high-efficiency, medium-voltage DC-DC conversion where both conduction and switching losses must be minimized simultaneously.
Availability
2SK1667-E is available at Aetrix Electronics and suitable for DC-DC converters, switching regulators, and motor drive half-bridges requiring stable component supply with long-term industrial lifecycle support.
Supply support for 2SK1667-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SK1667-E belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for high-reliability, medium-voltage switching applications in industrial power supplies and motor controls.
FAQ
What is the maximum continuous drain current rating for the 2SK1667-E?
The 2SK1667-E has a continuous drain current (ID) rating of 7 A at TC = 25°C. This value decreases with increasing case temperature per the derating curve - e.g., ~4.5 A at TC = 100°C. The 28 A peak rating applies only for pulses ≤10 µs with ≤1% duty cycle, as defined in the Absolute Maximum Ratings table of the 2SK1667-E datasheet.
Does the 2SK1667-E have a built-in body diode, and what are its key parameters?
Yes, the 2SK1667-E integrates a body diode between Source and Drain. Its key parameters include 1.0 V forward voltage (VDF) at 7 A and 180 ns reverse recovery time (trr) under di/dt = 100 A/µs conditions. These values are measured with VGS = 0 and are confirmed in the Electrical Characteristics section of the 2SK1667-E datasheet.
What is the gate-to-source voltage limit for the 2SK1667-E, and why is it important?
The 2SK1667-E specifies a gate-to-source voltage (VGS) limit of ±30 V. Exceeding this rating risks permanent gate oxide damage. In practice, gate drive circuits should clamp VGS to ≤20 V for reliability, especially in noisy industrial environments. This limit is explicitly stated in the Absolute Maximum Ratings table of the 2SK1667-E datasheet.
Can the 2SK1667-E be used in linear (analog) regulation mode?
Yes - the 2SK1667-E supports linear-mode operation, as confirmed by its Safe Operating Area (SOA) graph covering DC, pulsed, and transient conditions. However, power dissipation must remain within the 50 W channel limit at TC = 25°C and derated per the thermal curve. The 2SK1667-E's no-secondary-breakdown characteristic makes it safer than many MOSFETs for analog current regulation.
What package type does the 2SK1667-E use, and is the flange electrically active?
The 2SK1667-E uses the TO-220AB package (RENESAS code PRSS0004AC-A), and its metal flange is electrically connected to the Drain terminal. This allows direct thermal coupling to a heatsink while maintaining high-voltage isolation from Source and Gate - a critical layout consideration confirmed in the Outline diagram of the 2SK1667-E datasheet.
2SK1667-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1667-E FAQ
1.How can I place an order for 2SK1667-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1667-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1667-E reliable?
The price and inventory of 2SK1667-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1667-E is usually 5 days.
3.What payment methods are accepted for 2SK1667-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1667-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1667-E?
2SK1667-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1667-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1667-E?
For technical support, including 2SK1667-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1667-E requirements.
6.How does Aetrix verify that 2SK1667-E is sourced from the original manufacturer or authorized distributors?
All 2SK1667-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1667-E meets industry standards.
7.What is the process for return or replacement of 2SK1667-E?
All 2SK1667-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1667-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1667-E part is unused and in its original packaging.
Return procedure for 2SK1667-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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