Renesas 2SK1838L-E
- Part No.:
- 2SK1838L-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1838L-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:1,773
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SK1838L-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features 250 V VDSS, 1 A continuous drain current, 5.5 Ω typical RDS(on) at VGS = 10 V, 6 ns rise time, and DPAK(L)-(1) surface-mount package with drain-connected tab for thermal performance.
For engineers reviewing the 2SK1838L-E datasheet, 2SK1838L-E pinout, 2SK1838L-E application, or 2SK1838L-E equivalent, this device is selected for compact, medium-voltage switching where low drive current, absence of secondary breakdown, and fast turn-off (10 ns td(off)) are critical in flyback and buck topologies.
Technical Context
This MOSFET operates as a unidirectional voltage-controlled switch in hard-switched SMPS stages. Its gate threshold voltage range (2.0–3.0 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while its 60 pF input capacitance and 5 pF reverse transfer capacitance support stable high-frequency operation up to several hundred kHz.
The integrated body diode exhibits 0.96 V forward voltage at 1 A and 160 ns reverse recovery time-key for synchronous rectification evaluation and freewheeling path design in non-isolated converters. Thermal resistance θch–c = 12.5 °C/W (Tc = 25 °C) confirms suitability for PCB copper-pour heatsinking in DPAK-L footprint layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - supports 200 V DC bus designs with 25% margin for voltage spikes in industrial DC-DC supplies. |
| RDS(on) | 5.5 Ω typ. at ID = 0.5 A, VGS = 10 V - enables <1 W conduction loss at rated current, reducing thermal load on small PCBs. |
| tr/tf | 6 ns / 4.5 ns - minimizes switching transition losses in 200–500 kHz converter designs. |
| Ciss/Coss | 60 pF / 30 pF - low input/output capacitance eases gate driver sizing and improves efficiency at high frequency. |
| VGS(off) | 2.0–3.0 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO without level-shifting. |
| trr | 160 ns - defines minimum dead-time requirements when used with complementary switches in half-bridge configurations. |
| Pch | 10 W at Tc = 25 °C - sets maximum continuous power dissipation under direct heatsink mounting conditions. |
Pinout & Package
2SK1838L-E uses the DPAK(L)-(1) package (Renesas code PRSS0004ZD-A), a thermally enhanced variant of DPAK with extended drain tab for improved heat transfer to PCB copper. Dimensions: 16.2 × 5.5 × 3.1 mm (L × W × H), mass 0.42 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; requires ≤±30 V rating and ≤±10 µA leakage; driven by low-current logic sources. |
| 2 (D) | Drain | Main high-side power terminal; internally connected to metal tab for thermal and electrical continuity to heatsink plane. |
| 3 (S) | Source | Reference node for gate drive; common return path for load current and body diode conduction. |
| 4 (D) | Drain (redundant) | Second drain connection-electrically identical to Pin 2-enhances current handling and thermal spreading via dual-tab layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 5.5 Ω typical enables <0.3 W conduction loss at 250 mA, supporting energy-efficient low-power SMPS. |
| No secondary breakdown | Eliminates safe operating area (SOA) derating constraints during transient overloads, simplifying protection design. |
| Low drive current requirement | Gate charge Qg not specified but inferred from Ciss = 60 pF - allows direct drive from MCU GPIO without external buffer. |
| High-speed switching | 10 ns td(off) + 4.5 ns tf reduces total switching time to <20 ns, cutting cross-conduction losses in PWM stages. |
| Integrated body diode | VDF = 0.96 V @ 1 A supports efficient freewheeling in buck/flyback without external diode in cost-sensitive designs. |
Applications
| AC-DC Adapter Power Stage | Industrial DC-DC Buck Converter |
|---|---|
|
Use Scenario: Primary-side switching in 12–24 V output, 15–30 W offline adapters with universal AC input. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in discontinuous conduction mode (DCM) flyback topology. Use Value: 250 V VDSS accommodates reflected output voltage plus leakage spike margin; low RDS(on) maintains >85% efficiency at full load. |
Use Scenario: Step-down regulator powering PLC I/O modules from 24 V rail in factory automation systems. IC Role / Device Role / Timing Role: Main switching element in synchronous buck converter operating at 300 kHz. Use Value: Fast 6 ns rise time and 160 ns trr allow tight dead-time control, minimizing shoot-through risk with discrete synchronous rectification. |
| LED Driver for Street Lighting | Telecom DC-DC Module |
|
Use Scenario: Constant-current boost controller driving 12–20 V LED strings from 12 V battery backup in outdoor lighting. IC Role / Device Role / Timing Role: Switching transistor in boost converter stage with peak current mode control. Use Value: No secondary breakdown permits robust operation during LED open-circuit transients; 150 °C Tch rating supports sealed fixture thermal environments. |
Use Scenario: Isolated 48 V to 3.3/5 V DC-DC module in telecom line cards requiring high reliability and low EMI. IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward converter primary side. Use Value: Low Coss (30 pF) and Crss (5 pF) reduce capacitive losses and improve ZVS behavior at 250 kHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK60ZFP | 600 V VDSS, 2 A ID, 4.5 Ω RDS(on), TO-220FP package | Higher voltage rating suits 380 V PFC front-ends; larger package requires more board space and thermal vias. | Choose when system input exceeds 300 V DC or when through-hole assembly is preferred. |
| IRFZ44NPBF | 55 V VDSS, 49 A ID, 28 mΩ RDS(on), TO-220 package | Lower voltage rating limits use to ≤40 V bus; higher current capacity irrelevant for 1 A applications. | Choose only for low-voltage, high-current motor drive or solenoid control-not for 200+ V SMPS. |
Compared with STP2NK60ZFP and IRFZ44NPBF, the 2SK1838L-E offers optimal balance of 250 V rating, DPAK-L thermal performance, and sub-10 ns switching for compact, medium-power DC-DC converters-making it unsuitable as a drop-in replacement for either alternative due to voltage and package mismatch.
Availability
2SK1838L-E is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC buck converters, LED street lighting drivers, and telecom power modules requiring stable component supply and long-lifecycle support.
Supply support for 2SK1838L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SK1838L-E belongs to Renesas' legacy silicon MOSFET product line targeting cost-effective, high-reliability power switching in non-safety-critical industrial and consumer power supplies.
FAQ
What is the maximum continuous drain current rating for the 2SK1838L-E?
The 2SK1838L-E has a continuous drain current (ID) rating of 1 A at Ta = 25 °C. This value is derated above 25 °C ambient per the channel dissipation curve; at Tc = 25 °C, it supports 10 W channel dissipation, enabling higher current capability under heatsink-mounted conditions. Always verify actual ID against PCB layout and thermal design using the normalized transient thermal impedance chart in the 2SK1838L-E datasheet.
Does the 2SK1838L-E have a built-in body diode, and what are its key parameters?
Yes, the 2SK1838L-E integrates a body diode between source and drain. Its forward voltage (VDF) is 0.96 V at IF = 1 A and VGS = 0, and its reverse recovery time (trr) is 160 ns under di/dt = 100 A/µs. These values are confirmed in the Electrical Characteristics table of the 2SK1838L-E datasheet and define freewheeling behavior in buck and flyback topologies.
Is the 2SK1838L-E pin-compatible with the 2SK1838S variant?
No-the 2SK1838L-E uses the DPAK(L)-(1) package (PRSS0004ZD-A) with extended drain tab and 0.42 g mass, while the 2SK1838S uses the smaller DPAK(S) (PRSS0004ZD-C) with 0.28 g mass and different mechanical dimensions. Though both share identical pin numbering (G-D-S-D), their thermal profiles and PCB footprints differ; layout redesign is required when substituting between them. This distinction is documented in the Package Dimensions section of the 2SK1838L-E datasheet.
What gate drive voltage is required to fully enhance the 2SK1838L-E?
The 2SK1838L-E achieves full enhancement at VGS = 10 V, where RDS(on) is specified as 5.5 Ω typical. Its gate threshold voltage (VGS(off)) ranges from 2.0 V to 3.0 V, meaning it begins conducting significantly above 3 V-but for minimal RDS(on) and consistent switching, 10 V drive is recommended. The 2SK1838L-E datasheet confirms these values in the Electrical Characteristics table under "Static drain to source on state resistance" and "Gate to source cutoff voltage."
Can the 2SK1838L-E be used in automotive applications?
The 2SK1838L-E is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and industrial robots-not for automotive or safety-critical systems. It lacks AEC-Q101 qualification, and Renesas explicitly prohibits use in transportation equipment without prior written consent. For automotive-grade alternatives, consult Renesas' RAJ or RV series MOSFETs, not the 2SK1838L-E.
2SK1838L-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1838L-E FAQ
1.How can I place an order for 2SK1838L-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1838L-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1838L-E reliable?
The price and inventory of 2SK1838L-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1838L-E is usually 5 days.
3.What payment methods are accepted for 2SK1838L-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1838L-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1838L-E?
2SK1838L-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1838L-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1838L-E?
For technical support, including 2SK1838L-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1838L-E requirements.
6.How does Aetrix verify that 2SK1838L-E is sourced from the original manufacturer or authorized distributors?
All 2SK1838L-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1838L-E meets industry standards.
7.What is the process for return or replacement of 2SK1838L-E?
All 2SK1838L-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1838L-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1838L-E part is unused and in its original packaging.
Return procedure for 2SK1838L-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SK1838L-E Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

