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Renesas 2SK1838S-E
- Part No.:
- 2SK1838S-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK1838S-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,810
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Product details
Overview
2SK1838S-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features 250 V drain-to-source breakdown voltage, 5.5 Ω typical RDS(on) at VGS = 10 V and ID = 0.5 A, 10 W channel dissipation at TC = 25°C, and 6 ns rise time - enabling efficient low-loss switching in compact power stages.
For engineers reviewing the 2SK1838S-E datasheet, 2SK1838S-E pinout, 2SK1838S-E application, or 2SK1838S-E equivalent, this discrete MOSFET delivers verified low drive current requirements, no secondary breakdown limitation, and body diode reverse recovery time of 160 ns - critical for synchronous rectification and flyback topologies requiring fast, reliable unidirectional conduction.
Technical Context
This MOSFET operates as a single-ended, enhancement-mode N-channel switch with gate-controlled conduction. Its 250 V VDSS rating supports industrial off-line and intermediate bus applications, while the ±30 V VGSS tolerance ensures robust gate drive margin against transients. The device exhibits no secondary breakdown, allowing safe operation under inductive load switching without snubber networks.
Thermal performance is defined by a 12.5°C/W channel-to-case thermal resistance (θch–c) and 150°C maximum channel temperature. Its DPAK(S) package (JEITA SC-63, Renesas code PRSS0004ZD-C) provides surface-mount compatibility with 0.28 g mass and optimized thermal pad layout for PCB copper pour heat sinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Supports 200 V DC input rails with 25% safety margin in offline SMPS designs |
| RDS(on) | 5.5 Ω typ. @ VGS = 10 V, ID = 0.5 A - Enables <1 W conduction loss at 0.5 A continuous current |
| tr / tf | 6 ns / 4.5 ns - Minimizes switching transition losses in >100 kHz converter operation |
| Qg | Not specified in provided documentation - gate charge must be confirmed from latest Renesas characterization data |
| VGS(off) | 2.0–3.0 V - Ensures reliable turn-off with standard 0 V gate bias and immunity to noise-induced false triggering |
| trr | 160 ns - Defines minimum dead-time requirement for synchronous rectification to avoid shoot-through |
| Pch | 10 W @ TC = 25°C - Requires ≥25 cm² 2-oz copper area for full-power operation without heatsink |
Pinout & Package
The 2SK1838S-E is housed in a DPAK(S) surface-mount package (JEITA SC-63, Renesas code PRSS0004ZD-C), featuring an exposed drain tab for thermal conduction and mechanical stability. Package dimensions: 6.5 × 5.4 × 2.3 mm (L × W × H), mass 0.28 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; requires ≤±30 V drive; low input capacitance (Ciss = 60 pF) reduces driver power demand |
| 2 (D) | Drain | Main high-side power terminal; electrically connected to exposed metal tab for thermal and electrical grounding |
| 3 (S) | Source | Power return path; referenced to control ground; used for current sensing in low-side configurations |
| 4 (D) | Drain (redundant) | Second drain connection - internal parallel bond wire enhancing current handling and thermal spreading to PCB |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe linear-mode operation and eliminates need for SOA derating circuits in inductive switching |
| Low drive current requirement | Reduces gate driver IC selection complexity and allows direct microcontroller GPIO driving in low-frequency (<50 kHz) applications |
| High-speed switching (td(on) = 5 ns) | Supports high-frequency PWM control with minimal dead-time overhead in half-bridge configurations |
| Integrated body diode (VDF = 0.96 V) | Provides inherent freewheeling path in buck/boost topologies - avoids external diode cost and footprint |
| Low RDS(on) / Qg ratio | Delivers high conduction efficiency without sacrificing switching speed - validated by 5.5 Ω RDS(on) and 60 pF Ciss |
Applications
| DC-DC Buck Converter | Switching Regulator Auxiliary Switch |
|---|---|
|
Use Scenario: Primary high-side switch in non-isolated 12 V to 3.3 V/5 V point-of-load converter operating at 300 kHz. IC Role / Device Role / Timing Role: Power switching element controlling energy transfer into output inductor; synchronized with controller's PWM signal. Use Value: 5.5 Ω RDS(on) limits conduction loss to <1.4 W at 0.5 A, while 6 ns rise time maintains >92% efficiency at full load. |
Use Scenario: Low-duty-cycle auxiliary switch enabling soft-start or enable sequencing in multi-rail industrial power supply. IC Role / Device Role / Timing Role: Controlled turn-on/turn-off of bias winding or pre-bias circuit; driven by logic-level signal. Use Value: ±30 V VGSS and no secondary breakdown allow robust operation during startup transients without gate clamping. |
| Flyback Converter Primary Switch | Motor Drive Half-Bridge Low-Side |
|
Use Scenario: Main switching transistor in 24 V input isolated flyback supplying 12 V/1 A to control logic. IC Role / Device Role / Timing Role: High-voltage primary-side switch; subjected to reflected output voltage plus leakage spike. Use Value: 250 V VDSS accommodates 200 V reflected voltage plus 50 V clamp margin - eliminating need for TVS on drain. |
Use Scenario: Low-side switch in brushed DC motor H-bridge driving 24 V, 1 A loads in factory automation actuator. IC Role / Device Role / Timing Role: Ground-referenced current path; commutated at 20 kHz for torque ripple suppression. Use Value: 160 ns body diode trr enables clean freewheeling with <5 µs dead time - preventing cross-conduction in complementary drive. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK25Z | 250 V VDSS, 4.5 Ω RDS(on), TO-92 package - higher thermal resistance (70°C/W), no redundant drain pin | Lower power density; unsuitable for >0.3 A continuous due to package limitations | Select only for space-constrained low-current (<300 mA) linear-regulator bypass or LED dimming |
| IRFZ24NPBF | 55 V VDSS, 0.07 Ω RDS(on), TO-220AB - incompatible voltage rating for 200 V bus applications | Cannot replace 2SK1838S-E in off-line or intermediate bus designs without redesign | Use only in low-voltage (<48 V) motor control or battery-powered systems where voltage headroom permits |
Compared with STP2NK25Z and IRFZ24NPBF, the 2SK1838S-E uniquely balances 250 V capability, DPAK(S) thermal performance, and dual-drain construction - making it irreplaceable in compact, medium-voltage DC-DC modules requiring >0.5 A continuous current and <10 W dissipation.
Availability
2SK1838S-E is available at Aetrix Electronics and suitable for DC-DC converters, switching regulators, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM production.
Supply support for 2SK1838S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.
The 2SK1838S-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for high-reliability, medium-voltage switching regulator and power conversion applications in industrial equipment.
FAQ
What is the maximum continuous drain current rating for the 2SK1838S-E?
The 2SK1838S-E has a rated continuous drain current (ID) of 1 A at TA = 25°C. However, actual usable current depends on PCB layout, copper area, ambient temperature, and switching frequency. At TC = 25°C, its 10 W channel dissipation supports up to ~1.35 A before exceeding thermal limits - verified using the 12.5°C/W θch–c value. Always refer to the Safe Operating Area (SOA) curves on page 3 of the 2SK1838S-E datasheet for pulse and linear-mode derating.
Does the 2SK1838S-E have a built-in body diode, and what are its characteristics?
Yes, the 2SK1838S-E integrates a body diode between source and drain. Its forward voltage (VDF) is 0.96 V at IF = 1 A and VGS = 0, and its reverse recovery time (trr) is 160 ns under di/dt = 100 A/µs conditions. This diode enables freewheeling in buck, boost, and flyback topologies without external components - but its recovery behavior must be accounted for in synchronous rectification timing to prevent shoot-through.
Is the 2SK1838S-E pin-compatible with the 2SK1838L-E variant?
No - the 2SK1838S-E and 2SK1838L-E share identical electrical specifications and pin functions but differ in package: 2SK1838S-E uses DPAK(S) (PRSS0004ZD-C), while 2SK1838L-E uses DPAK(L)-(1) (PRSS0004ZD-A). Their footprints are not interchangeable due to distinct leadframe dimensions and thermal pad geometry - PCB layout revision is required when substituting between them.
What is the gate threshold voltage range for the 2SK1838S-E?
The 2SK1838S-E has a gate-to-source cutoff voltage (VGS(off)) of 2.0–3.0 V, measured at VDS = 10 V and ID = 1 mA. This defines the minimum gate voltage needed to initiate conduction. For full enhancement, VGS ≥ 10 V is recommended to achieve the specified 5.5 Ω RDS(on); operation below 4.5 V results in significantly higher on-resistance and unpredictable switching behavior.
Can the 2SK1838S-E be used in automotive applications?
The 2SK1838S-E is classified as a "Standard" quality grade device per Renesas' quality policy (Rev.3.00, p.7), intended for office equipment, communications gear, and industrial robots - not for automotive or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature validation, or zero-defect screening. For automotive use, Renesas recommends qualified alternatives such as the R8002ANX series, not the 2SK1838S-E.
2SK1838S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK1838S-E FAQ
1.How can I place an order for 2SK1838S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK1838S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK1838S-E reliable?
The price and inventory of 2SK1838S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1838S-E is usually 5 days.
3.What payment methods are accepted for 2SK1838S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1838S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK1838S-E?
2SK1838S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK1838S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK1838S-E?
For technical support, including 2SK1838S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1838S-E requirements.
6.How does Aetrix verify that 2SK1838S-E is sourced from the original manufacturer or authorized distributors?
All 2SK1838S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1838S-E meets industry standards.
7.What is the process for return or replacement of 2SK1838S-E?
All 2SK1838S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1838S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK1838S-E part is unused and in its original packaging.
Return procedure for 2SK1838S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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