Renesas 2SK1850(0)-T-AZ

Overview

2SK1850(0)-T-AZ from Renesas Electronics is an N-channel silicon power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits. It features a drain-source voltage rating of 900 V, continuous drain current of 4 A at T_c = 25°C, and on-resistance of 2.4 Ω (max) at V_GS = 10 V. Its TO-220AB package supports industrial-grade thermal dissipation in offline SMPS applications.

For engineers reviewing the 2SK1850(0)-T-AZ datasheet, 2SK1850(0)-T-AZ pinout, 2SK1850(0)-T-AZ application, or 2SK1850(0)-T-AZ equivalent, key selection criteria include its 900 V V_DSS, 4 A I_D rating, 2.4 Ω R_DS(on), gate threshold voltage range (2.0–4.0 V), and safe operating area (SOA) compliance for repetitive pulse conditions.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for rugged avalanche capability and low gate charge (Q_g = 22 nC typ). Its transconductance (g_fs = 2.0 S min) and input capacitance (C_iss = 650 pF typ at V_DS = 25 V) support stable high-frequency switching up to 100 kHz in flyback and forward converter topologies.

The device meets JEDEC JESD22-A114 reliability standards for ESD (HBM ≥ 2 kV), operates within -55°C to +150°C junction temperature range, and is rated for 100% UIS (Unclamped Inductive Switching) testing per JEDEC JESD22-A115, confirming robustness in inductive load switching.

Key Specifications

Pinout & Package

2SK1850(0)-T-AZ is housed in a through-hole TO-220AB package with isolated tab (drain-connected), suitable for PCB mounting with mechanical screw-down heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP9NK90ZFP and FQP9N90C, the 2SK1850(0)-T-AZ offers balanced trade-offs: moderate R_DS(on) and Q_g, verified UIS robustness, and TO-220AB's proven manufacturability in mid-power industrial SMPS-making it optimal for cost-sensitive 40–80 W designs requiring field-proven reliability.

Availability

2SK1850(0)-T-AZ is available at Aetrix Electronics and suitable for AC-DC power adapters, LED lighting drivers, and industrial motor control circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SK1850(0)-T-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The 2SK1850(0)-T-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for rugged, cost-effective switching in offline power conversion systems targeting industrial and commercial equipment.

FAQ

What is the maximum junction temperature rating for the 2SK1850(0)-T-AZ?

The 2SK1850(0)-T-AZ has a maximum junction temperature (T_j) rating of +150°C. This allows operation in high-ambient environments such as enclosed industrial enclosures or LED driver housings. Derating curves in the official Renesas datasheet define safe continuous current versus case temperature, and the device must be heatsinked accordingly to maintain T_j ≤ 150°C under worst-case load and ambient conditions. The 2SK1850(0)-T-AZ is qualified per JEDEC JESD22-A103 for high-temperature storage life.

Does the 2SK1850(0)-T-AZ have avalanche capability, and is it tested?

Yes, the 2SK1850(0)-T-AZ is fully rated for unclamped inductive switching (UIS) and undergoes 100% production testing per JEDEC JESD22-A115. Its typical single-pulse avalanche energy (E_AS) is 170 mJ at T_j = 25°C. This validated ruggedness ensures reliable operation during transformer leakage spikes or load dump events in flyback and forward converters. The 2SK1850(0)-T-AZ datasheet provides SOA curves confirming safe operation under repetitive avalanche conditions.

What is the gate threshold voltage range for the 2SK1850(0)-T-AZ, and how does it affect drive design?

The 2SK1850(0)-T-AZ has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V, measured at I_D = 1 mA. This wide range ensures compatibility with both 5 V logic-level drivers and standard 12 V gate drivers without requiring negative turn-off bias. For robust switching, a minimum V_GS of 10 V is recommended to achieve the specified R_DS(on) of 2.4 Ω. The 2SK1850(0)-T-AZ's low Q_g further eases drive requirements in high-frequency designs.

Is the TO-220AB package of the 2SK1850(0)-T-AZ electrically isolated?

Yes, the TO-220AB package used by the 2SK1850(0)-T-AZ features an electrically isolated metal tab that is internally connected to the drain terminal. This isolation allows direct mounting to a grounded heatsink without additional insulation, provided the mounting hardware (screw, washer, bushing) maintains dielectric integrity. The creepage and clearance distances meet IPC-2221 Class B requirements for 300–600 V working voltages, making the 2SK1850(0)-T-AZ suitable for reinforced insulation in Class II power supplies.

What quality grade is assigned to the 2SK1850(0)-T-AZ per Renesas documentation?

Per Renesas Electronics' quality grading system defined in their general notices, the 2SK1850(0)-T-AZ is classified as a "Standard" grade product. This means it is intended for applications including industrial robots, office equipment, communications infrastructure, and home appliances-but not for automotive, medical life-support, or aerospace systems unless explicitly requalified. The 2SK1850(0)-T-AZ datasheet does not specify "High Quality" or "Specific" grade markings, confirming its Standard classification and suitability for general-purpose industrial power conversion.